Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Structure | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Current - Hold (Ih) (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - Off State | Current - On State (It (RMS)) (Max) | Voltage - Gate Trigger (Vgt) (Max) | Current - Non Rep. Surge 50, 60Hz (Itsm) | Current - Gate Trigger (Igt) (Max) | Current - On State (It (AV)) (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Number of SCRs, Diodes | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition |
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Vishay General Semiconductor - Diodes Division VS-85HF100 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Active | Chassis, Stud Mount | DO-203AB, DO-5, Stud | 85HF100 | Standard | DO-203AB (DO-5) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 100 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | 1.2 V @ 267 A | 9 mA @ 1000 V | -65°C ~ 180°C | 85A | - | |||||||||||||||||||||||||||||||||
Vishay General Semiconductor - Diodes Division VS-1N3208 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Active | Chassis, Stud Mount | DO-203AB, DO-5, Stud | 1N3208 | Standard | DO-203AB (DO-5) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 100 | Standard Recovery >500ns, > 200mA (Io) | 50 V | 1.5 V @ 15 A | 10 mA @ 50 V | -65°C ~ 175°C | 15A | - | |||||||||||||||||||||||||||||||||
Vishay General Semiconductor - Diodes Division VS-40HF40 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Active | Chassis, Stud Mount | DO-203AB, DO-5, Stud | 40HF40 | Standard | DO-203AB (DO-5) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 100 | Standard Recovery >500ns, > 200mA (Io) | 400 V | 1.3 V @ 125 A | 9 mA @ 400 V | -65°C ~ 190°C | 40A | - | |||||||||||||||||||||||||||||||||
Vishay General Semiconductor - Diodes Division 1N5400-E3/54 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Active | Through Hole | DO-201AD, Axial | 1N5400 | Standard | DO-201AD | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | EAR99 | 8541.10.0080 | 1,400 | Standard Recovery >500ns, > 200mA (Io) | 50 V | 1.2 V @ 3 A | 5 µA @ 50 V | -50°C ~ 150°C | 3A | 30pF @ 4V, 1MHz | |||||||||||||||||||||||||||||||||
Vishay General Semiconductor - Diodes Division VS-1N1183A | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Active | Chassis, Stud Mount | DO-203AB, DO-5, Stud | 1N1183 | Standard | DO-203AB (DO-5) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 100 | Standard Recovery >500ns, > 200mA (Io) | 50 V | 1.3 V @ 126 A | 2.5 mA @ 50 V | -65°C ~ 200°C | 40A | - | |||||||||||||||||||||||||||||||||
onsemi 2N4126BU | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | - | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | 2N4126 | 625 mW | TO-92-3 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0075 | 1,000 | 25 V | 200 mA | 50nA (ICBO) | PNP | 400mV @ 5mA, 50mA | 120 @ 2mA, 1V | 250MHz | |||||||||||||||||||||||||||||||||
onsemi 2N2221A | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | - | Obsolete | - | Through Hole | TO-206AA, TO-18-3 Metal Can | 2N2221 | 500 mW | TO-18 | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 250 | 40 V | 800 mA | - | NPN | 1V @ 50mA, 500mA | 40 @ 150mA, 10V | - | |||||||||||||||||||||||||||||||||
Vishay Siliconix IRF840 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | IRF840 | MOSFET (Metal Oxide) | TO-220AB | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 500 V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | ||||||||||||||||||||||||||||
Vishay Siliconix IRFD9110 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | IRFD9110 | MOSFET (Metal Oxide) | 4-HVMDIP | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | *IRFD9110 | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 100 V | 700mA (Ta) | 10V | 1.2Ohm @ 420mA, 10V | 4V @ 250µA | 8.7 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 1.3W (Ta) | |||||||||||||||||||||||||||
Vishay Siliconix IRFD9120 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Bulk | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | IRFD9120 | MOSFET (Metal Oxide) | 4-HVMDIP | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | *IRFD9120 | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 100 V | 1A (Ta) | 10V | 600mOhm @ 600mA, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 390 pF @ 25 V | - | 1.3W (Ta) | |||||||||||||||||||||||||||
Vishay Siliconix IRF530 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | IRF530 | MOSFET (Metal Oxide) | TO-220AB | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 100 V | 14A (Tc) | 10V | 160mOhm @ 8.4A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±20V | 670 pF @ 25 V | - | 88W (Tc) | ||||||||||||||||||||||||||||
Vishay Siliconix IRF730 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | IRF730 | MOSFET (Metal Oxide) | TO-220AB | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 400 V | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 74W (Tc) | ||||||||||||||||||||||||||||
Vishay Siliconix IRF710 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | IRF710 | MOSFET (Metal Oxide) | TO-220AB | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | *IRF710 | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 400 V | 2A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 36W (Tc) | |||||||||||||||||||||||||||
Vishay Siliconix IRF9610 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | IRF9610 | MOSFET (Metal Oxide) | TO-220AB | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | P-Channel | 200 V | 1.8A (Tc) | 10V | 3Ohm @ 900mA, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 20W (Tc) | ||||||||||||||||||||||||||||
Vishay General Semiconductor - Diodes Division 95HQ015 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | Chassis, Stud Mount | DO-203AB, DO-5, Stud | 95HQ015 | Schottky | DO-203AB (DO-5) | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 100 | Fast Recovery =< 500ns, > 200mA (Io) | 15 V | 460 mV @ 95 A | 20 mA @ 15 V | -65°C ~ 100°C | 95A | - | |||||||||||||||||||||||||||||||||
Vishay Siliconix IRFPC50 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IRFPC50 | MOSFET (Metal Oxide) | TO-247AC | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | *IRFPC50 | EAR99 | 8541.29.0095 | 500 | N-Channel | 600 V | 11A (Tc) | 10V | 600mOhm @ 6A, 10V | 4V @ 250µA | 140 nC @ 10 V | ±20V | 2700 pF @ 25 V | - | 180W (Tc) | |||||||||||||||||||||||||||
Vishay Siliconix IRFPF30 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IRFPF30 | MOSFET (Metal Oxide) | TO-247AC | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | *IRFPF30 | EAR99 | 8541.29.0095 | 500 | N-Channel | 900 V | 3.6A (Tc) | 10V | 3.7Ohm @ 2.2A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | |||||||||||||||||||||||||||
Vishay Siliconix IRFBE30 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | IRFBE30 | MOSFET (Metal Oxide) | TO-220AB | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | *IRFBE30 | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 800 V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | |||||||||||||||||||||||||||
Vishay Siliconix IRF634S | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IRF634 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | *IRF634S | EAR99 | 8541.29.0095 | 50 | N-Channel | 250 V | 8.1A (Tc) | 10V | 450mOhm @ 5.1A, 10V | 4V @ 250µA | 41 nC @ 10 V | ±20V | 770 pF @ 25 V | - | 3.1W (Ta), 74W (Tc) | |||||||||||||||||||||||||||
IXYS MCC95-16IO1B | IXYS |
Min: 1 Mult: 1 |
/image/IXYS | - | Bulk | Active | -40°C ~ 125°C (TJ) | Chassis Mount | TO-240AA | MCC95 | Series Connection - All SCRs | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.30.0080 | 36 | 200 mA | 1.6 kV | 180 A | 2.5 V | 2250A, 2400A | 150 mA | 116 A | 2 SCRs | ||||||||||||||||||||||||||||||||
onsemi NDS9953A | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | NDS995 | MOSFET (Metal Oxide) | 900mW | 8-SOIC | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 2,500 | 2 P-Channel (Dual) | 30V | 2.9A | 130mOhm @ 1A, 10V | 2.8V @ 250µA | 25nC @ 10V | 350pF @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||
Infineon Technologies 94-2310 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | HEXFET® | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 94-2310 | MOSFET (Metal Oxide) | D2PAK | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 17A (Tc) | 4V, 10V | 100mOhm @ 9A, 10V | 2V @ 250µA | 34 nC @ 5 V | ±20V | 800 pF @ 25 V | - | 3.8W (Ta), 79W (Tc) | ||||||||||||||||||||||||||||
onsemi MPSH34 | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MPSH34 | 625 mW | TO-92-3 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0075 | 2,000 | 40 V | 50 mA | 50nA (ICBO) | NPN | 500mV @ 2mA, 7mA | 15 @ 20mA, 2V | 500MHz | |||||||||||||||||||||||||||||||||
Vishay General Semiconductor - Diodes Division HFA08TB60S | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | HEXFRED® | Tube | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HFA08 | Standard | TO-263AB (D²PAK) | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 1,000 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 1.7 V @ 8 A | 55 ns | 5 µA @ 600 V | -55°C ~ 150°C | 8A | - | ||||||||||||||||||||||||||||||||
Vishay General Semiconductor - Diodes Division VS-P102W | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Active | -40°C ~ 125°C (TJ) | Chassis Mount | 8-PACE-PAK | P102 | Bridge, Single Phase - SCRs/Diodes (Layout 1) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.30.0080 | 10 | 130 mA | 600 V | 2 V | 357A, 375A | 60 mA | 2 SCRs, 2 Diodes | ||||||||||||||||||||||||||||||||||
Infineon Technologies IRL3103D1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | FETKY™ | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | *IRL3103D1 | EAR99 | 8541.29.0095 | 50 | N-Channel | 30 V | 64A (Tc) | 4.5V, 10V | 14mOhm @ 34A, 10V | 1V @ 250µA | 43 nC @ 4.5 V | ±16V | 1900 pF @ 25 V | - | 2W (Ta), 89W (Tc) | ||||||||||||||||||||||||||||
Infineon Technologies IRFP048N | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | HEXFET® | Bag | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247AC | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | *IRFP048N | EAR99 | 8541.29.0095 | 25 | N-Channel | 55 V | 64A (Tc) | 10V | 16mOhm @ 37A, 10V | 4V @ 250µA | 89 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 140W (Tc) | ||||||||||||||||||||||||||||
Panasonic Electronic Components 2SB1321A0A | Panasonic Electronic Components |
Min: 1 Mult: 1 |
/image/Panasonic Electronic Components | - | Cut Tape (CT) | Obsolete | 150°C (TJ) | Through Hole | 3-SIP | 2SB1321 | 600 mW | MT-1-A1 | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 2,000 | 50 V | 500 mA | 1µA | PNP | 600mV @ 30mA, 300mA | 85 @ 10mA, 10V | 200MHz | |||||||||||||||||||||||||||||||||
IXYS IXFN180N20 | IXYS |
Min: 1 Mult: 1 |
/image/IXYS | HiPerFET™ | Tube | Not For New Designs | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | IXFN180 | MOSFET (Metal Oxide) | SOT-227B | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | IXFN180N20-NDR | EAR99 | 8541.29.0095 | 10 | N-Channel | 200 V | 180A (Tc) | 10V | 10mOhm @ 500mA, 10V | 4V @ 8mA | 660 nC @ 10 V | ±20V | 22000 pF @ 25 V | - | 700W (Tc) | |||||||||||||||||||||||||||
Panasonic Electronic Components 2SC4212H | Panasonic Electronic Components |
Min: 1 Mult: 1 |
/image/Panasonic Electronic Components | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | 2SC421 | 5 W | TO-126B-A1 | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1,000 | 300 V | 200 mA | 2µA (ICBO) | NPN | 1V @ 5mA, 50mA | 40 @ 10mA, 10V | 80MHz |
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