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Diodes(19990)
| Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Tolerance | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | ECCN | HTSUS | Standard Package | Speed | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Zener (Nom) (Vz) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Vishay General Semiconductor - Diodes Division BAT86S-TAP | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Cut Tape (CT) | Active | Through Hole | DO-204AH, DO-35, Axial | BAT86 | Schottky | DO-35 (DO-204AH) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0070 | 10,000 | Small Signal =< 200mA (Io), Any Speed | 50 V | 900 mV @ 100 mA | 5 µA @ 40 V | 125°C (Max) | 200mA | 8pF @ 1V, 1MHz | ||||||
| Vishay General Semiconductor - Diodes Division BAV18-TAP | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tape & Box (TB) | Active | Through Hole | DO-204AH, DO-35, Axial | BAV18 | Standard | DO-35 (DO-204AH) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0070 | 50,000 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | 1 V @ 100 mA | 50 ns | 100 nA @ 50 V | 175°C (Max) | 250mA | 1.5pF @ 0V, 1MHz | |||||
| Vishay General Semiconductor - Diodes Division BY228-13TAP | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Box (TB) | Active | Through Hole | SOD-64, Axial | BY228 | Avalanche | SOD-64 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 12,500 | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | 1.5 V @ 5 A | 2 µs | 5 µA @ 1000 V | 140°C (Max) | 3A | - | |||||
| Vishay General Semiconductor - Diodes Division BY228TAP | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Cut Tape (CT) | Active | Through Hole | SOD-64, Axial | BY228 | Avalanche | SOD-64 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 2,500 | Standard Recovery >500ns, > 200mA (Io) | 1500 V | 1.5 V @ 5 A | 20 µs | 5 µA @ 1500 V | 140°C (Max) | 3A | - | |||||
| Vishay General Semiconductor - Diodes Division BY269TAP | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Cut Tape (CT) | Active | Through Hole | SOD-57, Axial | BY269 | Avalanche | SOD-57 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 5,000 | Standard Recovery >500ns, > 200mA (Io) | 1600 V | 1.6 V @ 3 A | 2 µs | 2 µA @ 1400 V | 140°C (Max) | 2A | - | |||||
| Vishay General Semiconductor - Diodes Division BYM36A-TAP | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Box (TB) | Active | Through Hole | SOD-64, Axial | BYM36 | Avalanche | SOD-64 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 12,500 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | 1.6 V @ 3 A | 100 ns | 5 µA @ 200 V | -55°C ~ 175°C | 3A | - | |||||
| Vishay General Semiconductor - Diodes Division BYM36E-TAP | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Cut Tape (CT) | Active | Through Hole | SOD-64, Axial | BYM36 | Avalanche | SOD-64 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 2,500 | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | 1.78 V @ 3 A | 150 ns | 5 µA @ 1000 V | -55°C ~ 175°C | 2.9A | - | |||||
| Vishay General Semiconductor - Diodes Division BYT51K-TAP | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Box (TB) | Active | Through Hole | SOD-57, Axial | BYT51 | Avalanche | SOD-57 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 25,000 | Standard Recovery >500ns, > 200mA (Io) | 800 V | 1.1 V @ 1 A | 4 µs | 1 µA @ 800 V | -55°C ~ 175°C | 1.5A | - | |||||
| Vishay General Semiconductor - Diodes Division BYT52J-TAP | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Box (TB) | Active | Through Hole | SOD-57, Axial | BYT52 | Avalanche | SOD-57 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 25,000 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 1.3 V @ 1 A | 200 ns | 5 µA @ 600 V | -55°C ~ 175°C | 1.4A | - | |||||
| Vishay General Semiconductor - Diodes Division BYT52M-TAP | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Cut Tape (CT) | Active | Through Hole | SOD-57, Axial | BYT52 | Avalanche | SOD-57 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 5,000 | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | 1.3 V @ 1 A | 200 ns | 5 µA @ 1000 V | -55°C ~ 175°C | 1.4A | - | |||||
| Vishay General Semiconductor - Diodes Division BYT53D-TAP | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Box (TB) | Active | Through Hole | SOD-57, Axial | BYT53 | Avalanche | SOD-57 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 25,000 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | 1.1 V @ 1 A | 50 ns | 5 µA @ 200 V | -55°C ~ 175°C | 1.9A | - | |||||
| Vishay General Semiconductor - Diodes Division BYT54K-TAP | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Box (TB) | Active | Through Hole | SOD-57, Axial | BYT54 | Avalanche | SOD-57 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 25,000 | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | 1.5 V @ 1 A | 100 ns | 5 µA @ 800 V | -55°C ~ 175°C | 1.25A | - | |||||
| Vishay General Semiconductor - Diodes Division BYT54M-TAP | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Cut Tape (CT) | Active | Through Hole | SOD-57, Axial | BYT54 | Avalanche | SOD-57 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 5,000 | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | 1.5 V @ 1 A | 100 ns | 5 µA @ 1000 V | -55°C ~ 175°C | 1.25A | - | |||||
| Vishay General Semiconductor - Diodes Division BYT56A-TAP | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Box (TB) | Active | Through Hole | SOD-64, Axial | BYT56 | Avalanche | SOD-64 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 12,500 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | 1.4 V @ 3 A | 100 ns | 5 µA @ 50 V | -55°C ~ 175°C | 3A | - | |||||
| Vishay General Semiconductor - Diodes Division BYT77-TAP | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Box (TB) | Active | Through Hole | SOD-64, Axial | BYT77 | Avalanche | SOD-64 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 12,500 | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | 1.2 V @ 3 A | 250 ns | 5 µA @ 800 V | -55°C ~ 175°C | 3A | - | |||||
| Vishay General Semiconductor - Diodes Division BYV27-600-TAP | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Cut Tape (CT) | Active | Through Hole | SOD-57, Axial | BYV27 | Avalanche | SOD-57 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 5,000 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 1.35 V @ 3 A | 250 ns | 5 µA @ 600 V | -55°C ~ 175°C | 2A | - | |||||
| Vishay General Semiconductor - Diodes Division BYV98-100-TAP | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Box (TB) | Active | Through Hole | SOD-64, Axial | BYV98 | Avalanche | SOD-64 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 12,500 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | 1.1 V @ 5 A | 35 ns | 10 µA @ 100 V | -55°C ~ 175°C | 4A | - | |||||
| Vishay General Semiconductor - Diodes Division BYV98-200-TAP | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Box (TB) | Active | Through Hole | SOD-64, Axial | BYV98 | Avalanche | SOD-64 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 12,500 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | 1.1 V @ 5 A | 35 ns | 10 µA @ 200 V | -55°C ~ 175°C | 4A | - | |||||
| Vishay General Semiconductor - Diodes Division BYW33-TR | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Active | Through Hole | SOD-57, Axial | BYW33 | Avalanche | SOD-57 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 25,000 | Fast Recovery =< 500ns, > 200mA (Io) | 300 V | 1.1 V @ 1 A | 200 ns | 5 µA @ 300 V | -55°C ~ 175°C | 2A | - | |||||
| Vishay General Semiconductor - Diodes Division BYW34-TR | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Active | Through Hole | SOD-57, Axial | BYW34 | Avalanche | SOD-57 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 25,000 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | 1.1 V @ 1 A | 200 ns | 5 µA @ 400 V | -55°C ~ 175°C | 2A | - | |||||
| Vishay General Semiconductor - Diodes Division BYW35-TR | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Active | Through Hole | SOD-57, Axial | BYW35 | Avalanche | SOD-57 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 25,000 | Fast Recovery =< 500ns, > 200mA (Io) | 500 V | 1.1 V @ 1 A | 200 ns | 5 µA @ 500 V | -55°C ~ 175°C | 2A | - | |||||
| Vishay General Semiconductor - Diodes Division BYW55-TR | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Active | Through Hole | SOD-57, Axial | BYW55 | Avalanche | SOD-57 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 5,000 | Standard Recovery >500ns, > 200mA (Io) | 800 V | 1 V @ 1 A | 4 µs | 1 µA @ 800 V | -55°C ~ 175°C | 2A | - | |||||
| Vishay General Semiconductor - Diodes Division BYW72-TR | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Active | Through Hole | SOD-64, Axial | BYW72 | Avalanche | SOD-64 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 12,500 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | 1.1 V @ 3 A | 200 ns | 5 µA @ 200 V | -55°C ~ 175°C | 3A | - | |||||
| Vishay General Semiconductor - Diodes Division BYW82-TR | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Active | Through Hole | SOD-64, Axial | BYW82 | Avalanche | SOD-64 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 2,500 | Standard Recovery >500ns, > 200mA (Io) | 200 V | 1 V @ 3 A | 7.5 µs | 1 µA @ 200 V | -55°C ~ 175°C | 3A | 60pF @ 4V, 1MHz | |||||
| Vishay General Semiconductor - Diodes Division BZD17C110P-E3-18 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Active | - | -55°C ~ 150°C | Surface Mount | DO-219AB | BZD17C110 | 800 mW | DO-219AB (SMF) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0050 | 50,000 | 1.2 V @ 200 mA | 1 µA @ 82 V | 110 V | ||||||||
| Vishay General Semiconductor - Diodes Division BZD17C27P-E3-18 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Active | - | -55°C ~ 150°C | Surface Mount | DO-219AB | BZD17C27 | 800 mW | DO-219AB (SMF) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0050 | 50,000 | 1.2 V @ 200 mA | 1 µA @ 20 V | 27 V | ||||||||
| Vishay General Semiconductor - Diodes Division BZD17C30P-E3-18 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Active | - | -55°C ~ 150°C | Surface Mount | DO-219AB | BZD17C30 | 800 mW | DO-219AB (SMF) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0050 | 50,000 | 1.2 V @ 200 mA | 1 µA @ 22 V | 30 V | ||||||||
| Vishay General Semiconductor - Diodes Division BZD17C36P-E3-18 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Active | - | -55°C ~ 150°C | Surface Mount | DO-219AB | BZD17C36 | 800 mW | DO-219AB (SMF) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0050 | 50,000 | 1.2 V @ 200 mA | 1 µA @ 27 V | 36 V | ||||||||
| Vishay General Semiconductor - Diodes Division BZD17C43P-E3-18 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Active | - | -55°C ~ 150°C | Surface Mount | DO-219AB | BZD17C43 | 800 mW | DO-219AB (SMF) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0050 | 50,000 | 1.2 V @ 200 mA | 1 µA @ 33 V | 43 V | ||||||||
| Vishay General Semiconductor - Diodes Division BZD17C4V7P-E3-18 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Active | - | -55°C ~ 150°C | Surface Mount | DO-219AB | BZD17C4V7 | 800 mW | DO-219AB (SMF) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0050 | 50,000 | 1.2 V @ 200 mA | 10 µA @ 10 V | 4.7 V |
