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Diodes(19990)
| Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Speed | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Diode Type | Voltage - Peak Reverse (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay General Semiconductor - Diodes Division GBU6K-5410M3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU6 | Standard | GBU | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 6 A | 5 µA @ 800 V | 3.8 A | Single Phase | 800 V | |||||||||
|
Vishay General Semiconductor - Diodes Division GBU8DL-6088E3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU8 | Standard | GBU | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 8 A | 5 µA @ 200 V | 3.9 A | Single Phase | 200 V | |||||||||
|
Vishay General Semiconductor - Diodes Division GBU8DL-6088M3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU8 | Standard | GBU | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 8 A | 5 µA @ 200 V | 3.9 A | Single Phase | 200 V | |||||||||
|
Vishay General Semiconductor - Diodes Division GBU8DL-6088M3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU8 | Standard | GBU | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 8 A | 5 µA @ 200 V | 3.9 A | Single Phase | 200 V | |||||||||
|
Vishay General Semiconductor - Diodes Division GBU8J-5410M3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU8 | Standard | GBU | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 8 A | 5 µA @ 600 V | 3.9 A | Single Phase | 600 V | |||||||||
|
Vishay General Semiconductor - Diodes Division GBU8JL-5300M3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU8 | Standard | GBU | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 8 A | 5 µA @ 600 V | 3.9 A | Single Phase | 600 V | |||||||||
|
Vishay General Semiconductor - Diodes Division GBU8JL-6088M3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU8 | Standard | GBU | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 8 A | 5 µA @ 600 V | 3.9 A | Single Phase | 600 V | |||||||||
|
Vishay General Semiconductor - Diodes Division GBU8JL-7000M3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU8 | Standard | GBU | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 8 A | 5 µA @ 600 V | 3.9 A | Single Phase | 600 V | |||||||||
|
Vishay General Semiconductor - Diodes Division GBU8K-3M3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU8 | Standard | GBU | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 8 A | 5 µA @ 800 V | 3.9 A | Single Phase | 800 V | |||||||||
|
Vishay General Semiconductor - Diodes Division GBU8K-5E3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU8 | Standard | GBU | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 8 A | 5 µA @ 800 V | 3.9 A | Single Phase | 800 V | |||||||||
|
Vishay General Semiconductor - Diodes Division GBU8K-7001M3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU8 | Standard | GBU | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 8 A | 5 µA @ 800 V | 3.9 A | Single Phase | 800 V | |||||||||
|
Vishay General Semiconductor - Diodes Division GBU8KL-5301E3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU8 | Standard | GBU | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 8 A | 5 µA @ 800 V | 3.9 A | Single Phase | 800 V | |||||||||
|
Vishay General Semiconductor - Diodes Division GBU8KL-5301M3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU8 | Standard | GBU | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 8 A | 5 µA @ 800 V | 3.9 A | Single Phase | 800 V | |||||||||
|
Vishay General Semiconductor - Diodes Division GSIB1520L-801E3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB1520 | Standard | GSIB-5S | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 950 mV @ 7.5 A | 10 µA @ 200 V | 3.5 A | Single Phase | 200 V | |||||||||
|
Vishay General Semiconductor - Diodes Division GSIB2580-5402E3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB2580 | Standard | GSIB-5S | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 12.5 A | 10 µA @ 800 V | 3.5 A | Single Phase | 800 V | |||||||||
|
Vishay General Semiconductor - Diodes Division GSIB6A60L-802E3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB6 | Standard | GSIB-5S | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 3 A | 10 µA @ 600 V | 2.8 A | Single Phase | 600 V | |||||||||
|
Vishay General Semiconductor - Diodes Division SX128H060S4OV | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Surface Mount | Die | SX128 | Schottky | Die | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 6.9 V @ 20 A | 100 µA @ 60 V | -65°C ~ 175°C | ||||||||||
| Vishay General Semiconductor - Diodes Division UGB12JT-E3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | UGB12 | Standard | TO-263AB (D²PAK) | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 1.75 V @ 12 A | 50 ns | 30 µA @ 600 V | -55°C ~ 150°C | ||||||||||
| Vishay General Semiconductor - Diodes Division UGB15HTHE3/81 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tube | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | UGB15 | Standard | TO-263AB (D²PAK) | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 500 V | 1.75 V @ 15 A | 50 ns | 30 µA @ 500 V | -55°C ~ 150°C | ||||||||||
| Vishay General Semiconductor - Diodes Division UGB15JTHE3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tube | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | UGB15 | Standard | TO-263AB (D²PAK) | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 1.75 V @ 15 A | 50 ns | 30 µA @ 600 V | -55°C ~ 150°C | ||||||||||
| Vishay General Semiconductor - Diodes Division UGB15JTHE3/81 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tube | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | UGB15 | Standard | TO-263AB (D²PAK) | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 1.75 V @ 15 A | 50 ns | 30 µA @ 600 V | -55°C ~ 150°C | ||||||||||
| Vishay General Semiconductor - Diodes Division UGB5HT-E3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | UGB5 | Standard | TO-263AB (D²PAK) | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 500 V | 1.75 V @ 5 A | 50 ns | 30 µA @ 500 V | -55°C ~ 150°C | ||||||||||
| Vishay General Semiconductor - Diodes Division UGE18ACT-E3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Through Hole | TO-220-3 | UGE18 | Standard | TO-220-3 | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 50 V | 18A | 1.2 V @ 20 A | 30 ns | 10 µA @ 50 V | -65°C ~ 150°C | ||||||||
| Vishay General Semiconductor - Diodes Division UGE18BCT-E3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Through Hole | TO-220-3 | UGE18 | Standard | TO-220-3 | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 100 V | 18A | 1.2 V @ 20 A | 30 ns | 10 µA @ 100 V | -65°C ~ 150°C | ||||||||
| Taiwan Semiconductor Corporation KBL407G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
/image/Taiwan Semiconductor Corporation | - | Tray | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBL | KBL407 | Standard | KBL | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 1,000 | 1.1 V @ 4 A | 10 µA @ 1000 V | 4 A | Single Phase | 1 kV | ||||||||
| Taiwan Semiconductor Corporation KBU1006G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
/image/Taiwan Semiconductor Corporation | - | Tray | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU1006 | Standard | KBU | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 500 | 1.1 V @ 10 A | 5 µA @ 800 V | 10 A | Single Phase | 800 V | ||||||||
| Taiwan Semiconductor Corporation KBU605G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
/image/Taiwan Semiconductor Corporation | - | Tray | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU605 | Standard | KBU | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 500 | 1.1 V @ 6 A | 5 µA @ 600 V | 6 A | Single Phase | 600 V | ||||||||
| Taiwan Semiconductor Corporation KBU801G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
/image/Taiwan Semiconductor Corporation | - | Tray | Discontinued at Digi-Key | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU801 | Standard | KBU | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | KBU801GT0 | EAR99 | 8541.10.0080 | 500 | 1.1 V @ 8 A | 5 µA @ 50 V | 8 A | Single Phase | 50 V | |||||||
| Taiwan Semiconductor Corporation KBU1006G T0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
/image/Taiwan Semiconductor Corporation | - | Tray | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | Standard | KBU | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | KBU1006GT0G | EAR99 | 8541.10.0080 | 500 | 1.1 V @ 10 A | 5 µA @ 800 V | 10 A | Single Phase | 800 V | ||||||||
| Taiwan Semiconductor Corporation KBU406G T0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
/image/Taiwan Semiconductor Corporation | - | Tray | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | Standard | KBU | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | KBU406GT0G | EAR99 | 8541.10.0080 | 500 | 1.1 V @ 4 A | 5 µA @ 800 V | 4 A | Single Phase | 800 V |
