Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Input | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Vce(on) (Max) @ Vge, Ic | Current - Collector Cutoff (Max) | NTC Thermistor | Input Capacitance (Cies) @ Vce |
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Vishay Siliconix SI1023CX-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SI1023 | MOSFET (Metal Oxide) | 220mW | SC-89 (SOT-563F) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | 2 P-Channel (Dual) | 20V | - | 756mOhm @ 350mA, 4.5V | 1V @ 250µA | 2.5nC @ 4.5V | 45pF @ 10V | Logic Level Gate | ||||||||||||||
Vishay Siliconix SI2329DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SI2329 | MOSFET (Metal Oxide) | SOT-23-3 (TO-236) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 8 V | 6A (Tc) | 1.2V, 4.5V | 30mOhm @ 5.3A, 4.5V | 800mV @ 250µA | 29 nC @ 4.5 V | ±5V | 1485 pF @ 4 V | - | 2.5W (Tc) | ||||||||||||
Vishay Siliconix SI4196DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | SI4196 | MOSFET (Metal Oxide) | 8-SOIC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 20 V | 8A (Tc) | 1.8V, 4.5V | 27mOhm @ 8A, 4.5V | 1V @ 250µA | 22 nC @ 8 V | ±8V | 830 pF @ 10 V | - | 2W (Ta), 4.6W (Tc) | |||||||||||||
Vishay Siliconix SI4447ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | SI4447 | MOSFET (Metal Oxide) | 8-SOIC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 40 V | 7.2A (Tc) | 4.5V, 10V | 45mOhm @ 5A, 10V | 2.5V @ 250µA | 38 nC @ 10 V | ±20V | 970 pF @ 20 V | - | 4.2W (Tc) | |||||||||||||
Vishay Siliconix SI4455DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | SI4455 | MOSFET (Metal Oxide) | 8-SOIC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 150 V | 2A (Ta) | 6V, 10V | 295mOhm @ 4A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±20V | 1190 pF @ 50 V | - | 5.9W (Tc) | |||||||||||||
Vishay Siliconix SI5997DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® ChipFET™ Dual | SI5997 | MOSFET (Metal Oxide) | 10.4W | PowerPAK® ChipFet Dual | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 P-Channel (Dual) | 30V | 6A | 54mOhm @ 3A, 10V | 2.4V @ 250µA | 14.5nC @ 10V | 430pF @ 15V | Logic Level Gate | |||||||||||||||
Vishay Siliconix SIA400EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 | SIA400 | MOSFET (Metal Oxide) | PowerPAK® SC-70-6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 12A (Tc) | 2.5V, 4.5V | 19mOhm @ 11A, 4.5V | 1.5V @ 250µA | 36 nC @ 10 V | ±12V | 1265 pF @ 15 V | - | 19.2W (Tc) | |||||||||||||
Vishay Siliconix SIA447DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 | SIA447 | MOSFET (Metal Oxide) | PowerPAK® SC-70-6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 12 V | 12A (Tc) | 1.5V, 4.5V | 13.5mOhm @ 7A, 4.5V | 850mV @ 250µA | 80 nC @ 8 V | ±8V | 2880 pF @ 6 V | - | 19W (Tc) | |||||||||||||
Vishay Siliconix SIA920DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Dual | SIA920 | MOSFET (Metal Oxide) | 7.8W | PowerPAK® SC-70-6 Dual | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 8V | 4.5A | 27mOhm @ 5.3A, 4.5V | 700mV @ 250µA | 7.5nC @ 4.5V | 470pF @ 4V | Logic Level Gate | |||||||||||||||
Vishay Siliconix SIB437EDKT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® TSC-75-6 | SIB437 | MOSFET (Metal Oxide) | PowerPAK® TSC75-6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 8 V | 9A (Tc) | 1.2V, 4.5V | 34mOhm @ 3A, 4.5V | 700mV @ 250µA | 16 nC @ 4.5 V | ±5V | - | 2.4W (Ta), 13W (Tc) | ||||||||||||||
Vishay Siliconix SIHF12N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | E | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | SIHF12 | MOSFET (Metal Oxide) | TO-220 Full Pack | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 600 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | - | 33W (Tc) | |||||||||||||
Vishay Siliconix SIHG22N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | SIHG22 | MOSFET (Metal Oxide) | TO-247AC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 500 | N-Channel | 500 V | 22A (Tc) | 10V | 230mOhm @ 11A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±30V | 1938 pF @ 100 V | - | 312W (Tc) | |||||||||||||
Vishay Siliconix SIHG30N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | SIHG30 | MOSFET (Metal Oxide) | TO-247AC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 500 | N-Channel | 600 V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±30V | 2600 pF @ 100 V | - | 250W (Tc) | |||||||||||||
Vishay Siliconix SIHP15N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | E | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | SIHP15 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±30V | 1350 pF @ 100 V | - | 180W (Tc) | |||||||||||||
Vishay Siliconix SIHP21N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | SIHP21 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 650 V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 106 nC @ 10 V | ±20V | 2322 pF @ 100 V | - | 208W (Tc) | |||||||||||||
Vishay Siliconix SIHW47N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | SIHW47 | MOSFET (Metal Oxide) | TO-247AD | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 480 | N-Channel | 600 V | 47A (Tc) | 10V | 65mOhm @ 24A, 10V | 4V @ 250µA | 225 nC @ 10 V | ±30V | 4854 pF @ 100 V | - | 379W (Tc) | |||||||||||||
Toshiba Semiconductor and Storage TK35N65W,S1F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
/image/Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | TK35N65 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 35A (Ta) | 10V | 80mOhm @ 17.5A, 10V | 3.5V @ 2.1mA | 100 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 270W (Tc) | |||||||||||||
Texas Instruments CSD25402Q3A | Texas Instruments |
Min: 1 Mult: 1 |
/image/Texas Instruments | NexFET™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | CSD25402Q3 | MOSFET (Metal Oxide) | 8-VSONP (3x3.15) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 20 V | 76A (Tc) | 1.8V, 4.5V | 8.9mOhm @ 10A, 4.5V | 1.15V @ 250µA | 9.7 nC @ 4.5 V | ±12V | 1790 pF @ 10 V | - | 2.8W (Ta), 69W (Tc) | ||||||||||||
onsemi HUFA75639S3ST-F085A | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | Automotive, AEC-Q101, UltraFET™ | Tape & Reel (TR) | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HUFA75 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | N-Channel | 100 V | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | 4V @ 250µA | 130 nC @ 20 V | ±20V | 2000 pF @ 25 V | - | 200W (Tc) | |||||||||||||
Vishay Siliconix SQ2319ES-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Cut Tape (CT) | Obsolete | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SQ2319 | MOSFET (Metal Oxide) | SOT-23-3 (TO-236) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 40 V | 4.6A (Tc) | 75mOhm @ 3A, 10V | 2.5V @ 250µA | 16 nC @ 10 V | 620 pF @ 25 V | - | ||||||||||||||||
Texas Instruments CSD25483F4T | Texas Instruments |
Min: 1 Mult: 1 |
/image/Texas Instruments | FemtoFET™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | CSD25483 | MOSFET (Metal Oxide) | 3-PICOSTAR | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 250 | P-Channel | 20 V | 1.6A (Ta) | 1.8V, 4.5V | 205mOhm @ 500mA, 8V | 1.2V @ 250µA | 0.96 nC @ 4.5 V | -12V | 198 pF @ 10 V | - | 500mW (Ta) | ||||||||||||
Texas Instruments CSD88537NDT | Texas Instruments |
Min: 1 Mult: 1 |
/image/Texas Instruments | NexFET™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | CSD88537 | MOSFET (Metal Oxide) | 2.1W | 8-SOIC | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 250 | 2 N-Channel (Dual) | 60V | 15A | 15mOhm @ 8A, 10V | 3.6V @ 250µA | 18nC @ 10V | 1400pF @ 30V | - | ||||||||||||||
Microchip Technology LP0701N3-G | Microchip Technology |
Min: 1 Mult: 1 |
/image/Microchip Technology | - | Bag | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | LP0701N3 | MOSFET (Metal Oxide) | TO-92 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | P-Channel | 16.5 V | 500mA (Tj) | 2V, 5V | 1.5Ohm @ 300mA, 5V | 1V @ 1mA | ±10V | 250 pF @ 15 V | - | 1W (Tc) | |||||||||||||
Vishay General Semiconductor - Diodes Division VS-ETF075Y60U | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Active | 175°C (TJ) | Chassis Mount | EMIPAK-2B | ETF075 | 294 W | Standard | EMIPAK-2B | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 60 | Three Level Inverter | Trench | 600 V | 100 A | 1.93V @ 15V, 75A | 100 µA | Yes | 4.44 nF @ 30 V | ||||||||||||||
Vishay General Semiconductor - Diodes Division VS-ETL015Y120H | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Active | 150°C (TJ) | Chassis Mount | EMIPAK-2B | ETL015 | 89 W | Standard | EMIPAK-2B | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 56 | Trench | 1200 V | 22 A | 3.03V @ 15V, 15A | 75 µA | Yes | 1.07 nF @ 30 V | |||||||||||||||
Vishay General Semiconductor - Diodes Division VS-GA100TS120UPBF | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | INT-A-Pak | GA100 | 520 W | Standard | INT-A-PAK | download | ROHS3 Compliant | 1 (Unlimited) | VSGA100TS120UPBF | EAR99 | 8541.29.0095 | 15 | Half Bridge | - | 1200 V | 182 A | 3V @ 15V, 100A | 1 mA | No | 18.67 nF @ 30 V | ||||||||||||||
Vishay General Semiconductor - Diodes Division VS-GA300TD60S | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | Dual INT-A-PAK (3 + 8) | GA300 | 1136 W | Standard | Dual INT-A-PAK | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGA300TD60S | EAR99 | 8541.29.0095 | 12 | Half Bridge | - | 600 V | 530 A | 1.45V @ 15V, 300A | 750 µA | No | |||||||||||||||
Vishay General Semiconductor - Diodes Division VS-GB100LP120N | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | INT-A-Pak | GB100 | 658 W | Standard | INT-A-PAK | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGB100LP120N | EAR99 | 8541.29.0095 | 24 | Single | - | 1200 V | 200 A | 1.8V @ 15V, 100A (Typ) | 1 mA | No | 7.43 nF @ 25 V | ||||||||||||||
Vishay General Semiconductor - Diodes Division VS-GB100TH120N | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | GB100 | 833 W | Standard | Double INT-A-PAK | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGB100TH120N | EAR99 | 8541.29.0095 | 12 | Half Bridge | - | 1200 V | 200 A | 2.35V @ 15V, 100A | 5 mA | No | 8.58 nF @ 25 V | ||||||||||||||
Vishay General Semiconductor - Diodes Division VS-GB100TP120U | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | - | Chassis Mount | INT-A-Pak | GB100 | 735 W | Standard | INT-A-PAK | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGB100TP120U | EAR99 | 8541.29.0095 | 24 | Half Bridge | - | 1200 V | 150 A | 3.9V @ 15V, 100A | 2 mA | No | 4.3 nF @ 25 V |
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