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Transistors(6554)
| Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Input | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Reverse Recovery Time (trr) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | NTC Thermistor | Input Capacitance (Cies) @ Vce | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Texas Instruments CSD18504KCS | Texas Instruments |
Min: 1 Mult: 1 |
/image/Texas Instruments | NexFET™ | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | CSD18504 | MOSFET (Metal Oxide) | TO-220-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 40 V | 53A (Ta), 100A (Tc) | 4.5V, 10V | 7mOhm @ 40A, 10V | 2.3V @ 250µA | 25 nC @ 10 V | ±20V | 1800 pF @ 20 V | - | 115W (Tc) | |||||||||||||||||||||||
| Renesas Electronics America Inc RJH60F7BDPQ-A0#T0 | Renesas Electronics America Inc |
Min: 1 Mult: 1 |
/image/Renesas Electronics America Inc | - | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | RJH60F7 | Standard | 328.9 W | TO-247A | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | RJH60F7BDPQA0T0 | EAR99 | 8541.29.0095 | 1 | 400V, 30A, 5Ohm, 15V | 25 ns | Trench | 600 V | 90 A | 1.75V @ 15V, 50A | - | 63ns/142ns | ||||||||||||||||||||||||
| Toshiba Semiconductor and Storage SSM3K324R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
/image/Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SSM3K324 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 4A (Ta) | 1.8V, 4.5V | 55mOhm @ 4A, 4.5V | - | ±12V | 190 pF @ 30 V | - | 1W (Ta) | ||||||||||||||||||||||||
| Texas Instruments CSD16556Q5B | Texas Instruments |
Min: 1 Mult: 1 |
/image/Texas Instruments | NexFET™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | CSD16556 | MOSFET (Metal Oxide) | 8-VSONP (5x6) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 25 V | 100A (Tc) | 4.5V, 10V | 1.07mOhm @ 30A, 10V | 1.7V @ 250µA | 47 nC @ 4.5 V | ±20V | 6180 pF @ 15 V | - | 3.2W (Ta), 191W (Tc) | |||||||||||||||||||||||
| onsemi FDME430NT | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | PowerTrench® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerUFDFN | FDME43 | MOSFET (Metal Oxide) | MicroFet 1.6x1.6 Thin | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 6A (Ta) | 1.8V, 4.5V | 40mOhm @ 6A, 4.5V | 1.5V @ 250µA | 9 nC @ 4.5 V | ±12V | 760 pF @ 15 V | - | 2.1W (Ta) | ||||||||||||||||||||||||
| Toshiba Semiconductor and Storage TK6P60W,RVQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
/image/Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK6P60 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 6.2A (Ta) | 10V | 820mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12 nC @ 10 V | ±30V | 390 pF @ 300 V | - | 60W (Tc) | ||||||||||||||||||||||||
| Microchip Technology MCP87022T-U/MF | Microchip Technology |
Min: 1 Mult: 1 |
/image/Microchip Technology | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MCP87022 | MOSFET (Metal Oxide) | 8-PDFN (5x6) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,300 | N-Channel | 25 V | 100A (Tc) | 4.5V, 10V | 2.3mOhm @ 25A, 10V | 1.6V @ 250µA | 29 nC @ 4.5 V | +10V, -8V | 2310 pF @ 12.5 V | - | 2.2W (Ta) | |||||||||||||||||||||||
| STMicroelectronics STN2580 | STMicroelectronics |
Min: 1 Mult: 1 |
/image/STMicroelectronics | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | STN2580 | 1.6 W | SOT-223 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | 400 V | 1 A | 10µA (ICBO) | NPN | 1V @ 200mA, 1A | 60 @ 250mA, 5V | - | |||||||||||||||||||||||||||
| Texas Instruments CSD87351ZQ5D | Texas Instruments |
Min: 1 Mult: 1 |
/image/Texas Instruments | NexFET™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | CSD87351 | MOSFET (Metal Oxide) | 12W | 8-LSON (5x6) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | 2 N-Channel (Dual) Asymmetrical | 30V | 32A | - | 2.1V @ 250µA | 7.7nC @ 4.5V | 1255pF @ 15V | Logic Level Gate | |||||||||||||||||||||||||
| onsemi FDMS86200DC | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | Dual Cool™, PowerTrench® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | FDMS86200 | MOSFET (Metal Oxide) | 8-PQFN (5x6) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 150 V | 9.3A (Ta), 28A (Tc) | 6V, 10V | 17mOhm @ 9.3A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±20V | 2955 pF @ 75 V | - | 3.2W (Ta), 125W (Tc) | |||||||||||||||||||||||
| STMicroelectronics STP110N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
/image/STMicroelectronics | DeepGATE™, STripFET™ VII | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | STP110 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 497-13551-5 | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 110A (Tc) | 10V | 7mOhm @ 55A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 5500 pF @ 50 V | - | 150W (Tc) | ||||||||||||||||||||||
| Vishay Siliconix SISA14DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | SISA14 | MOSFET (Metal Oxide) | PowerPAK® 1212-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 20A (Tc) | 4.5V, 10V | 5.1mOhm @ 10A, 10V | 2.2V @ 250µA | 29 nC @ 10 V | +20V, -16V | 1450 pF @ 15 V | - | 3.57W (Ta), 26.5W (Tc) | ||||||||||||||||||||||||
| Vishay Siliconix SI2365EDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SI2365 | MOSFET (Metal Oxide) | SOT-23-3 (TO-236) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 5.9A (Tc) | 1.8V, 4.5V | 32mOhm @ 4A, 4.5V | 1V @ 250µA | 36 nC @ 8 V | ±8V | - | 1W (Ta), 1.7W (Tc) | ||||||||||||||||||||||||
| Microchip Technology MCP87130T-U/MF | Microchip Technology |
Min: 1 Mult: 1 |
/image/Microchip Technology | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MCP87130 | MOSFET (Metal Oxide) | 8-PDFN (5x6) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,300 | N-Channel | 25 V | 43A (Tc) | 3.3V, 10V | 13.5mOhm @ 10A, 10V | 1.7V @ 250µA | 8 nC @ 4.5 V | +10V, -8V | 400 pF @ 12.5 V | - | 2.1W (Ta) | |||||||||||||||||||||||
| Toshiba Semiconductor and Storage TK6Q60W,S1VQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
/image/Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | TK6Q60 | MOSFET (Metal Oxide) | I-Pak | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 75 | N-Channel | 600 V | 6.2A (Ta) | 10V | 820mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12 nC @ 10 V | ±30V | 390 pF @ 300 V | - | 60W (Tc) | ||||||||||||||||||||||||
| STMicroelectronics STP130NH02L | STMicroelectronics |
Min: 1 Mult: 1 |
/image/STMicroelectronics | STripFET™ | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | STP130 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 24 V | 90A (Tc) | 5V, 10V | 4.4mOhm @ 45A, 10V | 1V @ 250µA | 93 nC @ 10 V | ±20V | 4450 pF @ 15 V | - | 150W (Tc) | |||||||||||||||||||||||
| STMicroelectronics STQ1HNK60R-AP | STMicroelectronics |
Min: 1 Mult: 1 |
/image/STMicroelectronics | SuperMESH™ | Cut Tape (CT) | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | STQ1HNK60 | MOSFET (Metal Oxide) | TO-92-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 400mA (Tc) | 10V | 8.5Ohm @ 500mA, 10V | 3.7V @ 250µA | 10 nC @ 10 V | ±30V | 156 pF @ 25 V | - | 3W (Tc) | |||||||||||||||||||||||
| STMicroelectronics BD136 | STMicroelectronics |
Min: 1 Mult: 1 |
/image/STMicroelectronics | - | Tube | Active | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | BD136 | 1.25 W | SOT-32-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | 45 V | 1.5 A | 100nA (ICBO) | PNP | 500mV @ 50mA, 500mA | 40 @ 2V, 150MA | - | |||||||||||||||||||||||||||
| Vishay Siliconix SIS435DNT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | SIS435 | MOSFET (Metal Oxide) | PowerPAK® 1212-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 30A (Tc) | 1.8V, 4.5V | 5.4mOhm @ 13A, 4.5V | 900mV @ 250µA | 180 nC @ 8 V | ±8V | 5700 pF @ 10 V | - | 3.7W (Ta), 39W (Tc) | ||||||||||||||||||||||||
| Vishay Siliconix SIS415DNT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | SIS415 | MOSFET (Metal Oxide) | PowerPAK® 1212-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 35A (Tc) | 2.5V, 10V | 4mOhm @ 20A, 10V | 1.5V @ 250µA | 180 nC @ 10 V | ±12V | 5460 pF @ 10 V | - | 3.7W (Ta), 52W (Tc) | ||||||||||||||||||||||||
| Infineon Technologies IRGP4063D-EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | IRGP4063D | Standard | 330 W | TO-247AD | download | 1 (Unlimited) | REACH Unaffected | SP001541796 | EAR99 | 8541.29.0095 | 25 | 400V, 48A, 10Ohm, 15V | 115 ns | Trench | 600 V | 96 A | 200 A | 2.14V @ 15V, 48A | 625µJ (on), 1.28mJ (off) | 140 nC | 60ns/145ns | |||||||||||||||||||||||
| Infineon Technologies IRGR2B60KDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IRGR2B60 | Standard | 35 W | D-Pak | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | 400V, 2A, 100Ohm, 15V | 68 ns | NPT | 600 V | 6.3 A | 8 A | 2.25V @ 15V, 2A | 74µJ (on), 39µJ (off) | 12 nC | 11ns/150ns | ||||||||||||||||||||||||
 |
NXP USA Inc. J1A012YXS/T1AY404, | NXP USA Inc. |
Min: 1 Mult: 1 |
/image/NXP USA Inc. | - | Tape & Reel (TR) | Obsolete | - | - | - | J1A0 | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 935296263118 | OBSOLETE | 0000.00.0000 | 12,500 | - | - | ||||||||||||||||||||||||||||||||
| Renesas Electronics America Inc RJH1CM5DPQ-E0#T2 | Renesas Electronics America Inc |
Min: 1 Mult: 1 |
/image/Renesas Electronics America Inc | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-247-3 | Standard | 245 W | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 8541.29.0095 | 1 | 600V, 15A, 5Ohm, 15V | 200 ns | - | 1200 V | 30 A | 2.7V @ 15V, 15A | 1.6mJ (on), 700µJ (off) | 74 nC | 40ns/100ns | |||||||||||||||||||||||||
|
Renesas Electronics America Inc UPA2812T1L-E2-AT | Renesas Electronics America Inc |
Min: 1 Mult: 1 |
/image/Renesas Electronics America Inc | - | Tape & Reel (TR) | Last Time Buy | 150°C (TJ) | Surface Mount | 8-PowerVDFN | UPA2812 | MOSFET (Metal Oxide) | 8-HWSON (3.3x3.3) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 30A (Tc) | 4.5V, 10V | 4.8mOhm @ 30A, 10V | - | 100 nC @ 10 V | ±20V | 3740 pF @ 10 V | - | 1.5W (Ta) | ||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-CPV363M4KPBF | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | 19-SIP (13 Leads), IMS-2 | CPV363 | 36 W | Standard | IMS-2 | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 160 | - | 600 V | 11 A | 2.1V @ 15V, 6A | 250 µA | No | 740 pF @ 30 V | ||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-CPV364M4UPBF | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | 19-SIP (13 Leads), IMS-2 | CPV364 | 63 W | Standard | IMS-2 | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 160 | - | 600 V | 20 A | 2.1V @ 15V, 10A | 250 µA | No | 2.1 nF @ 30 V | |||||||||||||||||||||||||||
| Vishay Siliconix SI2323DDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SI2323 | MOSFET (Metal Oxide) | SOT-23 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 5.3A (Tc) | 1.8V, 4.5V | 39mOhm @ 4.1A, 4.5V | 1V @ 250µA | 36 nC @ 8 V | ±8V | 1160 pF @ 10 V | - | 960mW (Ta), 1.7W (Tc) | |||||||||||||||||||||||
| Vishay Siliconix SI7149ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SI7149 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 50A (Tc) | 4.5V, 10V | 5.2mOhm @ 15A, 10V | 2.5V @ 250µA | 135 nC @ 10 V | ±25V | 5125 pF @ 15 V | - | 5W (Ta), 48W (Tc) | ||||||||||||||||||||||||
| Vishay Siliconix SIA439EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Obsolete | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 | SIA439 | MOSFET (Metal Oxide) | PowerPAK® SC-70-6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 28A (Tc) | 1.8V, 4.5V | 16.5mOhm @ 5A, 4.5V | 1V @ 250µA | 69 nC @ 8 V | ±8V | 2410 pF @ 10 V | - | 3.5W (Ta), 19W (Tc) |
