Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Input | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Reverse Recovery Time (trr) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | NTC Thermistor | Input Capacitance (Cies) @ Vce |
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Vishay Siliconix SIHP12N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | SIHP12 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 650 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±30V | 1224 pF @ 100 V | - | 156W (Tc) | ||||||||||||||||||||
Vishay Siliconix SIHB6N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIHB6 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 650 V | 7A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 250µA | 48 nC @ 10 V | ±30V | 820 pF @ 100 V | - | 78W (Tc) | ||||||||||||||||||||
Vishay Siliconix SI3993CDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SI3993 | MOSFET (Metal Oxide) | 1.4W | 6-TSOP | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 P-Channel (Dual) | 30V | 2.9A | 111mOhm @ 2.5A, 10V | 2.2V @ 250µA | 8nC @ 10V | 210pF @ 15V | - | ||||||||||||||||||||||
Microchip Technology DN3135K1-G | Microchip Technology |
Min: 1 Mult: 1 |
/image/Microchip Technology | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | DN3135 | MOSFET (Metal Oxide) | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 350 V | 72mA (Tj) | 0V | 35Ohm @ 150mA, 0V | - | ±20V | 120 pF @ 25 V | Depletion Mode | 360mW (Ta) | ||||||||||||||||||||
Microchip Technology GN2470K4-G | Microchip Technology |
Min: 1 Mult: 1 |
/image/Microchip Technology | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | GN2470 | Standard | 2.5 W | TO-252, (D-Pak) | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,000 | - | - | 700 V | 1 A | 3.5 A | 5V @ 13V, 3A | - | 8ns/20ns | |||||||||||||||||||||
Microchip Technology DN2625DK6-G | Microchip Technology |
Min: 1 Mult: 1 |
/image/Microchip Technology | - | Tray | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | DN2625 | MOSFET (Metal Oxide) | - | 8-DFN (5x5) | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 490 | 2 N-Channel (Dual) | 250V | 1.1A | 3.5Ohm @ 1A, 0V | - | 7.04nC @ 1.5V | 1000pF @ 25V | Depletion Mode | |||||||||||||||||||||
Infineon Technologies IRGP6650D-EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Tube | Obsolete | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | Standard | 306 W | TO-247AD | download | 1 (Unlimited) | REACH Unaffected | SP001549702 | EAR99 | 8541.29.0095 | 25 | 400V, 35A, 10Ohm, 15V | 50 ns | - | 600 V | 80 A | 105 A | 1.95V @ 15V, 35A | 300µJ (on), 630µJ (off) | 75 nC | 40ns/105ns | ||||||||||||||||||||
Vishay General Semiconductor - Diodes Division VS-CPV362M4FPBF | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | 19-SIP (13 Leads), IMS-2 | CPV362 | 23 W | Standard | IMS-2 | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSCPV362M4FPBF | EAR99 | 8541.29.0095 | 160 | - | 600 V | 8.8 A | 1.7V @ 15V, 4.8A | 250 µA | No | 340 pF @ 30 V | ||||||||||||||||||||||
Vishay General Semiconductor - Diodes Division VS-EMG050J60N | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | 150°C (TJ) | Chassis Mount | EMIPAK2 | EMG050 | 338 W | Standard | EMIPAK2 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSEMG050J60N | EAR99 | 8541.29.0095 | 56 | Half Bridge | - | 600 V | 88 A | 2.1V @ 15V, 50A | 100 µA | Yes | 9.5 nF @ 30 V | ||||||||||||||||||||
Vishay General Semiconductor - Diodes Division VS-ENQ030L120S | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Active | 150°C (TJ) | Chassis Mount | EMIPAK-1B | ENQ030 | 216 W | Standard | EMIPAK-1B | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 98 | Three Level Inverter | Trench | 1200 V | 61 A | 2.52V @ 15V, 30A | 230 µA | Yes | 3.34 nF @ 30 V | |||||||||||||||||||||
Vishay General Semiconductor - Diodes Division VS-FC220SA20 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | FC220 | MOSFET (Metal Oxide) | SOT-227 | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSFC220SA20 | EAR99 | 8541.29.0095 | 160 | N-Channel | 200 V | 220A (Tc) | 10V | 7mOhm @ 150A, 10V | 5.1V @ 500µA | 350 nC @ 10 V | ±30V | 21000 pF @ 50 V | - | 789W (Tc) | |||||||||||||||||||
Vishay General Semiconductor - Diodes Division VS-GA200TH60S | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | GA200 | 1042 W | Standard | Double INT-A-PAK | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGA200TH60S | EAR99 | 8541.29.0095 | 12 | Half Bridge | - | 600 V | 260 A | 1.9V @ 15V, 200A (Typ) | 5 µA | No | 13.1 nF @ 25 V | |||||||||||||||||||||
Vishay General Semiconductor - Diodes Division VS-GB100NH120N | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | GB100 | 833 W | Standard | Double INT-A-PAK | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGB100NH120N | EAR99 | 8541.29.0095 | 12 | Single | - | 1200 V | 200 A | 2.35V @ 15V, 100A | 5 mA | No | 8.58 nF @ 25 V | |||||||||||||||||||||
Vishay General Semiconductor - Diodes Division VS-GB300AH120N | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | Double INT-A-PAK (5) | GB300 | 2500 W | Standard | Double INT-A-PAK | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGB300AH120N | EAR99 | 8541.29.0095 | 12 | Single | - | 1200 V | 620 A | 1.9V @ 15V, 300A (Typ) | 5 mA | No | 21 nF @ 25 V | |||||||||||||||||||||
Vishay General Semiconductor - Diodes Division VS-GB300NH120N | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | GB300 | 1645 W | Standard | Double INT-A-PAK | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGB300NH120N | EAR99 | 8541.29.0095 | 12 | Single | - | 1200 V | 500 A | 2.45V @ 15V, 300A | 5 mA | No | 21.2 nF @ 25 V | |||||||||||||||||||||
Vishay General Semiconductor - Diodes Division VS-GB400TH120N | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | GB400 | 2604 W | Standard | Double INT-A-PAK | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGB400TH120N | EAR99 | 8541.29.0095 | 12 | Half Bridge | - | 1200 V | 800 A | 1.9V @ 15V, 400A (Typ) | 5 mA | No | 32.7 nF @ 25 V | |||||||||||||||||||||
Vishay General Semiconductor - Diodes Division VS-GB400TH120U | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | GB400 | 2660 W | Standard | Double INT-A-PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGB400TH120U | EAR99 | 8541.29.0095 | 12 | Half Bridge | NPT | 1200 V | 660 A | 3.6V @ 15V, 400A | 5 mA | No | 33.7 nF @ 30 V | ||||||||||||||||||||
Vishay General Semiconductor - Diodes Division VS-GB75SA120UP | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | GB75 | 658 W | Standard | SOT-227 | download | ROHS3 Compliant | 1 (Unlimited) | VSGB75SA120UP | EAR99 | 8541.29.0095 | 180 | Single | NPT | 1200 V | 3.8V @ 15V, 75A | 250 µA | No | |||||||||||||||||||||||
Vishay General Semiconductor - Diodes Division VS-GB75TP120U | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | GB75 | 500 W | Standard | INT-A-PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGB75TP120U | EAR99 | 8541.29.0095 | 24 | Half Bridge | - | 1200 V | 105 A | 3.2V @ 15V, 75A (Typ) | 2 mA | No | 4.3 nF @ 30 V | ||||||||||||||||||||
Vishay General Semiconductor - Diodes Division VS-GT400TH120U | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 8) | GT400 | 2344 W | Standard | Double INT-A-PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGT400TH120U | EAR99 | 8541.29.0095 | 12 | Half Bridge | Trench | 1200 V | 750 A | 2.35V @ 15V, 400A | 5 mA | No | 51.2 nF @ 30 V | ||||||||||||||||||||
Vishay General Semiconductor - Diodes Division VS-GT50TP120N | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | 175°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | GT50 | 405 W | Standard | INT-A-PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGT50TP120N | EAR99 | 8541.29.0095 | 24 | Half Bridge | Trench | 1200 V | 100 A | 2.35V @ 15V, 50A | 5 mA | No | 6.24 nF @ 30 V | ||||||||||||||||||||
onsemi FDD9409-F085 | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | Automotive, AEC-Q101, PowerTrench® | Tape & Reel (TR) | Not For New Designs | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | FDD9409 | MOSFET (Metal Oxide) | TO-252AA | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 40 V | 90A (Tc) | 10V | 3.2mOhm @ 80A, 10V | 4V @ 250µA | 46 nC @ 10 V | ±20V | 3130 pF @ 25 V | - | 150W (Tc) | |||||||||||||||||||
onsemi NTMFS5C646NLT1G | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | - | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | NTMFS5 | MOSFET (Metal Oxide) | 5-DFN (5x6) (8-SOFL) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 60 V | 19A (Ta) | 4.5V, 10V | 4.7mOhm @ 50A, 10V | 2V @ 250µA | 33.7 nC @ 10 V | ±20V | 2164 pF @ 25 V | - | 3.7W (Ta), 79W (Tc) | |||||||||||||||||||
onsemi ECH8695R-TL-W | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | ECH8695 | MOSFET (Metal Oxide) | 1.4W | SOT-28FL/ECH8 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) Common Drain | 24V | 11A | 9.1mOhm @ 5A, 4.5V | 1.3V @ 1mA | 10nC @ 4.5V | - | Logic Level Gate, 2.5V Drive | |||||||||||||||||||||
STMicroelectronics STB6N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
/image/STMicroelectronics | SuperMESH5™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | STB6N80 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 800 V | 4.5A (Tc) | 10V | 1.6Ohm @ 2A, 10V | 5V @ 100µA | 7.5 nC @ 10 V | 30V | 255 pF @ 100 V | - | 85W (Tc) | |||||||||||||||||||
STMicroelectronics STH80N10F7-2 | STMicroelectronics |
Min: 1 Mult: 1 |
/image/STMicroelectronics | DeepGATE™, STripFET™ VII | Tape & Reel (TR) | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | STH80N | MOSFET (Metal Oxide) | H2Pak-2 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 100 V | 80A (Tc) | 10V | 9.5mOhm @ 40A, 10V | 4.5V @ 250µA | 45 nC @ 10 V | ±20V | 3100 pF @ 50 V | - | 110W (Tc) | |||||||||||||||||||
STMicroelectronics STP6N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
/image/STMicroelectronics | SuperMESH5™ | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | STP6N80 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 497-15018-5 | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 4.5A (Tc) | 10V | 1.6Ohm @ 2A, 10V | 5V @ 100µA | 7.5 nC @ 10 V | 30V | 255 pF @ 100 V | - | 85W (Tc) | ||||||||||||||||||
Vishay Siliconix SQ4284EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | Automotive, AEC-Q101, TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | SQ4284 | MOSFET (Metal Oxide) | 3.9W | 8-SOIC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | 2 N-Channel (Dual) | 40V | - | 13.5mOhm @ 7A, 10V | 2.5V @ 250µA | 45nC @ 10V | 2200pF @ 25V | Logic Level Gate | ||||||||||||||||||||||
Vishay Siliconix SIHA15N50E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | SIHA15 | MOSFET (Metal Oxide) | TO-220 Full Pack | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 500 V | 14.5A (Tc) | 10V | 280mOhm @ 7.5A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±30V | 1162 pF @ 100 V | - | 33W (Tc) | ||||||||||||||||||||
Vishay Siliconix SIHB20N50E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIHB20 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 500 V | 19A (Tc) | 10V | 184mOhm @ 10A, 10V | 4V @ 250µA | 92 nC @ 10 V | ±30V | 1640 pF @ 100 V | - | 179W (Tc) |
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