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Transistors(6554)
| Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Frequency | Technology | Power - Max | Input | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Test Condition | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Reverse Recovery Time (trr) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Voltage - Test | Current - Collector Cutoff (Max) | NTC Thermistor | Input Capacitance (Cies) @ Vce | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Taiwan Semiconductor Corporation BC546C B1G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
/image/Taiwan Semiconductor Corporation | - | Bulk | Obsolete | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | BC546 | 500 mW | TO-92 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 5,000 | 65 V | 100 mA | 15nA (ICBO) | NPN | - | 420 @ 2mA, 5V | - | ||||||||||||||||||||||||||||||||||||||
| Vishay Siliconix SQJB70EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | Automotive, AEC-Q101, TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | SQJB70 | MOSFET (Metal Oxide) | 27W (Tc) | PowerPAK® SO-8 Dual | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 100V | 11.3A (Tc) | 95mOhm @ 4A, 10V | 3.5V @ 250µA | 7nC @ 10V | 220pF @ 25V | - | |||||||||||||||||||||||||||||||||||||
| Infineon Technologies IPW80R360P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | CoolMOS™ P7 | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IPW80R360 | MOSFET (Metal Oxide) | PG-TO247-3-41 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 800 V | 13A (Tc) | 10V | 360mOhm @ 5.6A, 10V | 3.5V @ 280µA | 30 nC @ 10 V | ±20V | 930 pF @ 500 V | - | 84W (Tc) | ||||||||||||||||||||||||||||||||||
| Infineon Technologies FF1400R17IP4PBOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | PrimePACK™3 | Tray | Active | -40°C ~ 150°C | Chassis Mount | Module | FF1400 | Standard | Module | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | EAR99 | 8541.29.0095 | 3 | 2 Independent | Trench Field Stop | 1700 V | 1400 A | 2.2V @ 15V, 1400A | 5 mA | Yes | 110 nF @ 25 V | |||||||||||||||||||||||||||||||||||||
| Infineon Technologies FP25R12W2T4BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Tray | Active | -40°C ~ 150°C | Chassis Mount | Module | FP25R12 | 175 W | Standard | Module | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | EAR99 | 8541.29.0095 | 15 | Three Phase Inverter | - | 1200 V | 39 A | 2.25V @ 15V, 25A | 1 mA | Yes | 1.45 nF @ 25 V | ||||||||||||||||||||||||||||||||||||
| Infineon Technologies FD1000R17IE4BOSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | PrimePACK™3 | Tray | Not For New Designs | -40°C ~ 150°C | Chassis Mount | Module | FD1000 | 6250 W | Standard | Module | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2 | Single | - | 1700 V | 2.45V @ 15V, 1000A | 5 mA | Yes | 81 nF @ 25 V | |||||||||||||||||||||||||||||||||||||
| Infineon Technologies FS100R06KE3BOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | EconoPACK™ 3 | Tray | Not For New Designs | -40°C ~ 150°C | Chassis Mount | Module | FS100R06 | 335 W | Standard | Module | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | EAR99 | 8541.29.0095 | 10 | Three Phase Inverter | Trench Field Stop | 600 V | 100 A | 1.9V @ 15V, 100A | 1 mA | Yes | 6.2 nF @ 25 V | ||||||||||||||||||||||||||||||||||||
| Infineon Technologies FS100R17KS4F | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | EconoPACK™ 3 | Bulk | Active | -40°C ~ 125°C | Chassis Mount | Module | FS100R17 | 960 W | Standard | Module | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | SP000900382 | EAR99 | 8541.29.0095 | 10 | Three Phase Inverter | - | 1700 V | 100 A | 4.7V @ 15V, 100A | 1 mA | Yes | 7 nF @ 25 V | ||||||||||||||||||||||||||||||||||||
| Infineon Technologies FF300R07KE4HOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | C | Tray | Active | -40°C ~ 150°C | Chassis Mount | Module | FF300R07 | 940 W | Standard | Module | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 10 | 2 Independent | Trench Field Stop | 650 V | 1.95V @ 15V, 300A | 5 mA | No | 19 nF @ 25 V | |||||||||||||||||||||||||||||||||||||
| Infineon Technologies DF900R12IP4DBOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | PrimePACK™2 | Tray | Active | -40°C ~ 150°C | Chassis Mount | Module | DF900R12 | 5100 W | Standard | Module | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3 | Single Chopper | Trench Field Stop | 1200 V | 900 A | 2.05V @ 15V, 900A | 5 mA | Yes | 54 nF @ 25 V | ||||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIHG17N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | E | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | SIHG17 | MOSFET (Metal Oxide) | TO-247AC | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 15A (Tc) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2408 pF @ 100 V | - | 208W (Tc) | ||||||||||||||||||||||||||||||||||||
| Infineon Technologies IRGP4063D-EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | IRGP4063D | Standard | 330 W | TO-247AD | download | 1 (Unlimited) | REACH Unaffected | SP001541796 | EAR99 | 8541.29.0095 | 25 | 400V, 48A, 10Ohm, 15V | 115 ns | Trench | 600 V | 96 A | 200 A | 2.14V @ 15V, 48A | 625µJ (on), 1.28mJ (off) | 140 nC | 60ns/145ns | ||||||||||||||||||||||||||||||||||
| Infineon Technologies IRGR2B60KDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IRGR2B60 | Standard | 35 W | D-Pak | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | 400V, 2A, 100Ohm, 15V | 68 ns | NPT | 600 V | 6.3 A | 8 A | 2.25V @ 15V, 2A | 74µJ (on), 39µJ (off) | 12 nC | 11ns/150ns | |||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIS435DNT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | SIS435 | MOSFET (Metal Oxide) | PowerPAK® 1212-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 30A (Tc) | 1.8V, 4.5V | 5.4mOhm @ 13A, 4.5V | 900mV @ 250µA | 180 nC @ 8 V | ±8V | 5700 pF @ 10 V | - | 3.7W (Ta), 39W (Tc) | |||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIS415DNT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | SIS415 | MOSFET (Metal Oxide) | PowerPAK® 1212-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 35A (Tc) | 2.5V, 10V | 4mOhm @ 20A, 10V | 1.5V @ 250µA | 180 nC @ 10 V | ±12V | 5460 pF @ 10 V | - | 3.7W (Ta), 52W (Tc) | |||||||||||||||||||||||||||||||||||
| NXP USA Inc. AFT23H200-4S2LR6 | NXP USA Inc. |
Min: 1 Mult: 1 |
/image/NXP USA Inc. | - | Tape & Reel (TR) | Obsolete | 65 V | Chassis Mount | NI-1230-4LS2L | AFT23 | 2.3GHz | LDMOS | NI-1230-4LS2L | ROHS3 Compliant | Not Applicable | REACH Unaffected | 935311216128 | 5A991G | 8541.29.0040 | 150 | Dual | - | 500 mA | 45W | 15.3dB | - | 28 V | |||||||||||||||||||||||||||||||||||||
| NXP USA Inc. AFT26P100-4WSR3 | NXP USA Inc. |
Min: 1 Mult: 1 |
/image/NXP USA Inc. | - | Tape & Reel (TR) | Obsolete | 65 V | Surface Mount | NI-780S-4L | AFT26 | 2.69GHz | LDMOS | NI-780S-4L | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 935320111128 | 5A991G | 8541.29.0040 | 250 | Dual | - | 200 mA | 22W | 15.1dB | - | 28 V | ||||||||||||||||||||||||||||||||||||
| Texas Instruments CSD18532NQ5B | Texas Instruments |
Min: 1 Mult: 1 |
/image/Texas Instruments | NexFET™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | CSD18532 | MOSFET (Metal Oxide) | 8-VSON-CLIP (5x6) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 60 V | 22A (Ta), 100A (Tc) | 6V, 10V | 3.4mOhm @ 25A, 10V | 3.4V @ 250µA | 64 nC @ 10 V | ±20V | 5340 pF @ 30 V | - | 3.2W (Ta) | ||||||||||||||||||||||||||||||||||
| Toshiba Semiconductor and Storage 2SC2713-GR,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
/image/Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SC2713 | 150 mW | TO-236 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 120 V | 100 mA | 100nA (ICBO) | NPN | 300mV @ 1mA, 10mA | 200 @ 2mA, 6V | 100MHz | |||||||||||||||||||||||||||||||||||||||
| Toshiba Semiconductor and Storage HN3C10FUTE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
/image/Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | - | Surface Mount | 6-TSSOP, SC-88, SOT-363 | HN3C10 | 200mW | US6 | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 11.5dB | 12V | 80mA | 2 NPN (Dual) | 80 @ 20mA, 10V | 7GHz | 1.1dB @ 1GHz | ||||||||||||||||||||||||||||||||||||||||
| Toshiba Semiconductor and Storage SSM3J15CT(TPL3) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
/image/Toshiba Semiconductor and Storage | π-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | SSM3J15 | MOSFET (Metal Oxide) | CST3 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | P-Channel | 30 V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | - | ±20V | 9.1 pF @ 3 V | - | 100mW (Ta) | ||||||||||||||||||||||||||||||||||||
| STMicroelectronics STB18N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
/image/STMicroelectronics | MDmesh™ II Plus | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | STB18 | MOSFET (Metal Oxide) | D2PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 600 V | 13A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 4V @ 250µA | 21.5 nC @ 10 V | ±25V | 791 pF @ 100 V | - | 110W (Tc) | ||||||||||||||||||||||||||||||||||
| STMicroelectronics STGD20N40LZ | STMicroelectronics |
Min: 1 Mult: 1 |
/image/STMicroelectronics | Automotive, AEC-Q101, PowerMESH™ | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | STGD20 | Logic | 125 W | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | 300V, 10A, 1kOhm, 5V | - | 390 V | 25 A | 40 A | 1.6V @ 4V, 6A | - | 24 nC | 700ns/4.3µs | |||||||||||||||||||||||||||||||||||
| Infineon Technologies IRGP4262D-EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Tube | Obsolete | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | Standard | 250 W | TO-247AD | download | 1 (Unlimited) | REACH Unaffected | SP001549768 | EAR99 | 8541.29.0095 | 25 | 400V, 24A, 10Ohm, 15V | 170 ns | - | 650 V | 60 A | 96 A | 2.1V @ 15V, 24A | 520µJ (on), 240µJ (off) | 70 nC | 24ns/73ns | |||||||||||||||||||||||||||||||||||
| Texas Instruments CSD85312Q3E | Texas Instruments |
Min: 1 Mult: 1 |
/image/Texas Instruments | NexFET™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | CSD85312 | MOSFET (Metal Oxide) | 2.5W | 8-VSON (3.3x3.3) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | 2 N-Channel (Dual) Common Source | 20V | 39A | 12.4mOhm @ 10A, 8V | 1.4V @ 250µA | 15.2nC @ 4.5V | 2390pF @ 10V | Logic Level Gate, 5V Drive | ||||||||||||||||||||||||||||||||||||
| Toshiba Semiconductor and Storage RN2711JE(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
/image/Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-553 | RN2711 | 100mW | ESV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200MHz | 10kOhms | - | ||||||||||||||||||||||||||||||||||||||
| Toshiba Semiconductor and Storage RN1702JE(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
/image/Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-553 | RN1702 | 100mW | ESV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250MHz | 10kOhms | 10kOhms | ||||||||||||||||||||||||||||||||||||||
| Texas Instruments CSD19502Q5B | Texas Instruments |
Min: 1 Mult: 1 |
/image/Texas Instruments | NexFET™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | CSD19502 | MOSFET (Metal Oxide) | 8-VSON-CLIP (5x6) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 80 V | 100A (Ta) | 6V, 10V | 4.1mOhm @ 19A, 10V | 3.3V @ 250µA | 62 nC @ 10 V | ±20V | 4870 pF @ 40 V | - | 3.1W (Ta), 195W (Tc) | ||||||||||||||||||||||||||||||||||
| Texas Instruments CSD19501KCS | Texas Instruments |
Min: 1 Mult: 1 |
/image/Texas Instruments | NexFET™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | CSD19501 | MOSFET (Metal Oxide) | TO-220-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 100A (Ta) | 6V, 10V | 6.6mOhm @ 60A, 10V | 3.2V @ 250µA | 50 nC @ 10 V | ±20V | 3980 pF @ 40 V | - | 217W (Tc) | ||||||||||||||||||||||||||||||||||
| Texas Instruments CSD25310Q2 | Texas Instruments |
Min: 1 Mult: 1 |
/image/Texas Instruments | NexFET™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | CSD25310 | MOSFET (Metal Oxide) | 6-WSON (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 20A (Ta) | 1.8V, 4.5V | 23.9mOhm @ 5A, 4.5V | 1.1V @ 250µA | 4.7 nC @ 4.5 V | ±8V | 655 pF @ 10 V | - | 2.9W (Ta) |
