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Transistors(6554)
| Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Frequency | Technology | Power - Max | Input | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Test Condition | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Reverse Recovery Time (trr) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Voltage - Test | Current - Collector Cutoff (Max) | NTC Thermistor | Input Capacitance (Cies) @ Vce | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay General Semiconductor - Diodes Division VS-GB100TH120U | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | GB100 | 1136 W | Standard | Double INT-A-PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGB100TH120U | EAR99 | 8541.29.0095 | 12 | Half Bridge | NPT | 1200 V | 200 A | 3.6V @ 15V, 100A | 5 mA | No | 8.45 nF @ 20 V | |||||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division VS-GB100TP120N | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | 150°C (TJ) | Chassis Mount | INT-A-Pak | GB100 | 650 W | Standard | INT-A-PAK | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGB100TP120N | EAR99 | 8541.29.0095 | 24 | Half Bridge | - | 1200 V | 200 A | 2.2V @ 15V, 100A | 5 mA | No | 7.43 nF @ 25 V | ||||||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division VS-GB150TS60NPBF | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | 150°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | GB150 | 500 W | Standard | INT-A-PAK | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGB150TS60NPBF | EAR99 | 8541.29.0095 | 15 | Half Bridge | NPT | 600 V | 138 A | 3V @ 15V, 150A | 200 µA | No | |||||||||||||||||||||||||||||||||||
|
Vishay General Semiconductor - Diodes Division VS-GB15XP120KTPBF | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Active | -40°C ~ 150°C (TJ) | Chassis Mount | 12-MTP Module | GB15 | 187 W | Standard | MTP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGB15XP120KTPBF | EAR99 | 8541.29.0095 | 105 | Three Phase Inverter | NPT | 1200 V | 30 A | 3.66V @ 15V, 30A | 250 µA | Yes | 1.95 nF @ 30 V | |||||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division VS-GB200TH120U | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | GB200 | 1316 W | Standard | Double INT-A-PAK | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGB200TH120U | EAR99 | 8541.29.0095 | 12 | Half Bridge | - | 1200 V | 330 A | 3.6V @ 15V, 200A | 5 mA | No | 16.9 nF @ 30 V | ||||||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division VS-GB300LH120N | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | GB300 | 1645 W | Standard | Double INT-A-PAK | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGB300LH120N | EAR99 | 8541.29.0095 | 12 | Single | - | 1200 V | 500 A | 2V @ 15V, 300A (Typ) | 5 mA | No | 21.2 nF @ 25 V | ||||||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division VS-GB600AH120N | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | Double INT-A-PAK (5) | GB600 | 3125 W | Standard | Double INT-A-PAK | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGB600AH120N | EAR99 | 8541.29.0095 | 12 | Single | - | 1200 V | 910 A | 1.9V @ 15V, 600A (Typ) | 5 mA | No | 41 nF @ 25 V | ||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-GB70LA60UF | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | GB70 | 447 W | Standard | SOT-227 | download | ROHS3 Compliant | 1 (Unlimited) | VSGB70LA60UF | EAR99 | 8541.29.0095 | 180 | Single | NPT | 600 V | 111 A | 2.44V @ 15V, 70A | 100 µA | No | ||||||||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division VS-GT100TP60N | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Active | 175°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | GT100 | 417 W | Standard | INT-A-PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 24 | Half Bridge | Trench | 600 V | 160 A | 2.1V @ 15V, 100A | 5 mA | No | 7.71 nF @ 30 V | ||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-GT140DA60U | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Active | -40°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | GT140 | 652 W | Standard | SOT-227 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 10 | Single | Trench | 600 V | 200 A | 2V @ 15V, 100A | 100 µA | No | ||||||||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division VS-GT300YH120N | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 8) | GT300 | 1042 W | Standard | Double INT-A-PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGT300YH120N | EAR99 | 8541.29.0095 | 12 | Half Bridge | Trench | 1200 V | 341 A | 2.17V @ 15V, 300A (Typ) | 300 µA | No | 36 nF @ 30 V | |||||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division VS-GT50TP60N | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | 175°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | GT50 | 208 W | Standard | INT-A-PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGT50TP60N | EAR99 | 8541.29.0095 | 24 | Half Bridge | Trench | 600 V | 85 A | 2.1V @ 15V, 50A | 1 mA | No | 3.03 nF @ 30 V | |||||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division VS-GT75NP120N | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | GT75 | 446 W | Standard | INT-A-PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGT75NP120N | EAR99 | 8541.29.0095 | 24 | Single | - | 1200 V | 150 A | 2.08V @ 15V, 75A (Typ) | 1 mA | No | 9.45 nF @ 30 V | |||||||||||||||||||||||||||||||||
| Vishay Siliconix SIS612EDNT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | SIS612 | MOSFET (Metal Oxide) | PowerPAK® 1212-8S | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 20 V | 50A (Tc) | 2.5V, 4.5V | 3.9mOhm @ 14A, 4.5V | 1.2V @ 1mA | 70 nC @ 10 V | ±12V | 2060 pF @ 10 V | - | 3.7W (Ta), 52W (Tc) | ||||||||||||||||||||||||||||||||||
| Nexperia USA Inc. PDTD143XUX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
/image/Nexperia USA Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | PDTD143 | 300 mW | SOT-323 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 934068345115 | EAR99 | 8541.21.0075 | 3,000 | 50 V | 500 mA | 500nA | NPN - Pre-Biased | 100mV @ 2.5mA, 50mA | 70 @ 50mA, 5V | 225 MHz | 4.7 kOhms | 10 kOhms | |||||||||||||||||||||||||||||||||||
| NXP USA Inc. A2T07D160W04SR3 | NXP USA Inc. |
Min: 1 Mult: 1 |
/image/NXP USA Inc. | - | Tape & Reel (TR) | Not For New Designs | 70 V | Surface Mount | NI-780S-4L | A2T07 | 803MHz | LDMOS | NI-780S-4L | ROHS3 Compliant | Not Applicable | REACH Unaffected | 935315451128 | EAR99 | 8541.29.0075 | 250 | Dual | - | 450 mA | 30W | 21.5dB | - | 28 V | ||||||||||||||||||||||||||||||||||||
| NXP USA Inc. MMRF1014NT1 | NXP USA Inc. |
Min: 1 Mult: 1 |
/image/NXP USA Inc. | - | Tape & Reel (TR) | Active | 68 V | Surface Mount | PLD-1.5 | MMRF1014 | 1.96GHz | LDMOS | PLD-1.5 | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0075 | 1,000 | - | 50 mA | 4W | 18dB | - | 28 V | |||||||||||||||||||||||||||||||||||||
| Infineon Technologies AUIRF1405ZS-7TRL | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | HEXFET® | Tape & Reel (TR) | Not For New Designs | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | AUIRF1405 | MOSFET (Metal Oxide) | D2PAK (7-Lead) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | N-Channel | 55 V | 120A (Tc) | 10V | 4.9mOhm @ 88A, 10V | 4V @ 150µA | 230 nC @ 10 V | ±20V | 5360 pF @ 25 V | - | 230W (Tc) | |||||||||||||||||||||||||||||||||
| Infineon Technologies IRF7171MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | FASTIRFET™, HEXFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MN | MOSFET (Metal Oxide) | DIRECTFET™ MN | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 4,800 | N-Channel | 100 V | 15A (Ta), 93A (Tc) | 10V | 6.5mOhm @ 56A, 10V | 3.6V @ 150µA | 54 nC @ 10 V | ±20V | 2160 pF @ 50 V | - | 2.8W (Ta), 104W (Tc) | |||||||||||||||||||||||||||||||||||
| Infineon Technologies IRGP4790D-EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Tube | Obsolete | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | Standard | 455 W | TO-247AD | download | 1 (Unlimited) | REACH Unaffected | SP001542360 | EAR99 | 8541.29.0095 | 400 | 400V, 75A, 10Ohm, 15V | 170 ns | - | 650 V | 140 A | 225 A | 2V @ 15V, 75A | 2.5mJ (on), 2.2mJ (off) | 210 nC | 50ns/200ns | ||||||||||||||||||||||||||||||||||
| STMicroelectronics STP16N50M2 | STMicroelectronics |
Min: 1 Mult: 1 |
/image/STMicroelectronics | MDmesh™ M2 | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | STP16N | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 13A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 4V @ 250µA | 19.5 nC @ 10 V | ±25V | 710 pF @ 100 V | - | 110W (Tc) | |||||||||||||||||||||||||||||||||
| STMicroelectronics STP7N105K5 | STMicroelectronics |
Min: 1 Mult: 1 |
/image/STMicroelectronics | SuperMESH5™ | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | STP7N105 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 1050 V | 4A (Tc) | 10V | 2Ohm @ 2A, 10V | 5V @ 100µA | 17 nC @ 10 V | ±30V | 380 pF @ 100 V | - | 110W (Tc) | |||||||||||||||||||||||||||||||||
| Vishay Siliconix SQJ912AEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | Automotive, AEC-Q101, TrenchFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | SQJ912 | MOSFET (Metal Oxide) | 48W | PowerPAK® SO-8 Dual | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 40V | 30A | 9.3mOhm @ 9.7A, 10V | 2.5V @ 250µA | 38nC @ 10V | 1835pF @ 20V | - | ||||||||||||||||||||||||||||||||||||
| Texas Instruments CSD13302W | Texas Instruments |
Min: 1 Mult: 1 |
/image/Texas Instruments | NexFET™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, DSBGA | CSD13302 | MOSFET (Metal Oxide) | 4-DSBGA (1x1) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 12 V | 1.6A (Ta) | 2.5V, 4.5V | 17.1mOhm @ 1A, 4.5V | 1.3V @ 250µA | 7.8 nC @ 4.5 V | ±10V | 862 pF @ 6 V | - | 1.8W (Ta) | |||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-ETF150Y65U | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tray | Obsolete | 175°C (TJ) | Chassis Mount | EMIPAK-2B | ETF150 | 417 W | Standard | EMIPAK-2B | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 60 | Three Level Inverter | Trench | 650 V | 142 A | 2.06V @ 15V, 100A | 100 µA | No | 6.6 nF @ 30 V | |||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIHA21N60EF-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | SIHA21 | MOSFET (Metal Oxide) | TO-220 Full Pack | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 21A (Tc) | 10V | 176mOhm @ 11A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±30V | 2030 pF @ 100 V | - | 35W (Tc) | ||||||||||||||||||||||||||||||||||
| Infineon Technologies IKZ75N65EH5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | TrenchStop™ 5 | Tube | Active | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4 | IKZ75N65 | Standard | 395 W | PG-TO247-4 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | 400V, 37.5A, 10Ohm, 15V | 58 ns | - | 650 V | 90 A | 300 A | 2.1V @ 15V, 75A | 680µJ (on), 430µJ (off) | 166 nC | 26ns/347ns | |||||||||||||||||||||||||||||||||
| onsemi FGH40T120SMDL4 | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | - | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | FGH40 | Standard | 555 W | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 450 | 600V, 40A, 10Ohm, 15V | 65 ns | Trench Field Stop | 1200 V | 80 A | 160 A | 2.4V @ 15V, 40A | 2.24mJ (on), 1.02mJ (off) | 370 nC | 44ns/464ns | |||||||||||||||||||||||||||||||||
| onsemi FCH190N65F-F085 | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | Automotive, AEC-Q101, SuperFET® II | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | FCH190 | MOSFET (Metal Oxide) | TO-247-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 20.6A (Tc) | 10V | 190mOhm @ 27A, 10V | 5V @ 250µA | 82 nC @ 10 V | ±20V | 3181 pF @ 25 V | - | 208W (Tc) | |||||||||||||||||||||||||||||||||
| Vishay Siliconix IRFZ48SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IRFZ48 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 50A (Tc) | 10V | 18mOhm @ 43A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 3.7W (Ta), 190W (Tc) |
