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Transistors(6554)
| Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Frequency | Technology | Power - Max | Input | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Test Condition | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Reverse Recovery Time (trr) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Voltage - Test | Current - Collector Cutoff (Max) | NTC Thermistor | Input Capacitance (Cies) @ Vce | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NXP USA Inc. BUK7E1R6-30E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
/image/NXP USA Inc. | TrenchMOS™ | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | BUK7 | MOSFET (Metal Oxide) | I2PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 30 V | 120A (Tc) | 10V | 1.6mOhm @ 25A, 10V | 4V @ 1mA | 154 nC @ 10 V | ±20V | 11960 pF @ 25 V | - | 349W (Tc) | |||||||||||||||||||||||||||||||||
| NXP USA Inc. BUK9515-60E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
/image/NXP USA Inc. | TrenchMOS™ | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | BUK95 | MOSFET (Metal Oxide) | TO-220AB | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 54A (Tc) | 5V, 10V | 13mOhm @ 15A, 10V | 2.1V @ 1mA | 20.5 nC @ 5 V | ±10V | 2651 pF @ 25 V | - | 96W (Tc) | ||||||||||||||||||||||||||||||||||
| NXP USA Inc. BUK951R6-30E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
/image/NXP USA Inc. | TrenchMOS™ | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | BUK95 | MOSFET (Metal Oxide) | TO-220AB | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 30 V | 120A (Tc) | 5V, 10V | 1.4mOhm @ 25A, 10V | 2.1V @ 1mA | 113 nC @ 5 V | ±10V | 16150 pF @ 25 V | - | 349W (Tc) | ||||||||||||||||||||||||||||||||||
| NXP USA Inc. BUK9E4R9-60E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
/image/NXP USA Inc. | TrenchMOS™ | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | BUK9 | MOSFET (Metal Oxide) | I2PAK | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 100A (Tc) | 5V, 10V | 4.5mOhm @ 25A, 10V | 2.1V @ 1mA | 65 nC @ 5 V | ±10V | 9710 pF @ 25 V | - | 234W (Tc) | ||||||||||||||||||||||||||||||||||
| Vishay Siliconix SI2333DDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SI2333 | MOSFET (Metal Oxide) | SOT-23-3 (TO-236) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 12 V | 6A (Tc) | 1.5V, 4.5V | 28mOhm @ 5A, 4.5V | 1V @ 250µA | 35 nC @ 8 V | ±8V | 1275 pF @ 6 V | - | 1.2W (Ta), 1.7W (Tc) | |||||||||||||||||||||||||||||||||
| Vishay Siliconix SIR642DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SIR642 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 40 V | 60A (Tc) | 4.5V, 10V | 2.4mOhm @ 15A, 10V | 2.3V @ 250µA | 84 nC @ 10 V | ±20V | 4155 pF @ 20 V | - | 4.8W (Ta), 41.7W (Tc) | ||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIR826ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SIR826 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 80 V | 60A (Tc) | 4.5V, 10V | 5.5mOhm @ 20A, 10V | 2.8V @ 250µA | 86 nC @ 10 V | ±20V | 2800 pF @ 40 V | - | 6.25W (Ta), 104W (Tc) | ||||||||||||||||||||||||||||||||||
| Vishay Siliconix SI1427EDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SI1427 | MOSFET (Metal Oxide) | SC-70-6 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 2A (Tc) | 1.5V, 4.5V | 64mOhm @ 3A, 4.5V | 1V @ 250µA | 21 nC @ 8 V | ±8V | - | 1.56W (Ta), 2.8W (Tc) | ||||||||||||||||||||||||||||||||||
| Nexperia USA Inc. BUK964R2-60E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
/image/Nexperia USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Tape & Reel (TR) | Last Time Buy | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | BUK964 | MOSFET (Metal Oxide) | D2PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | N-Channel | 60 V | 100A (Tc) | 5V, 10V | 3.9mOhm @ 25A, 10V | 2.1V @ 1mA | 72 nC @ 5 V | ±10V | 11380 pF @ 25 V | - | 263W (Tc) | |||||||||||||||||||||||||||||||||
| Infineon Technologies IPW50R190CEFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | CoolMOS™ | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IPW50R | MOSFET (Metal Oxide) | PG-TO247-3-1 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 240 | N-Channel | 500 V | 18.5A (Tc) | 13V | 190mOhm @ 6.2A, 13V | 3.5V @ 510µA | 47.2 nC @ 10 V | ±20V | 1137 pF @ 100 V | - | 127W (Tc) | ||||||||||||||||||||||||||||||||||
| Panasonic Electronic Components FK8V03030L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
/image/Panasonic Electronic Components | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | WMini8-F1 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 33 V | 12A (Ta) | 4.5V, 10V | 7mOhm @ 6A, 10V | 2.5V @ 1.73mA | 10.2 nC @ 4.5 V | ±20V | 1100 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||||||||||||||||||
| Panasonic Electronic Components DMC5610N0R | Panasonic Electronic Components |
Min: 1 Mult: 1 |
/image/Panasonic Electronic Components | - | Tape & Reel (TR) | Discontinued at Digi-Key | Surface Mount | 6-SMD (5 Leads), Flat Lead | DMC5610 | 150mW | SMini5-F3-B | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 250mV @ 500µA, 10mA | 80 @ 5mA, 10V | - | 4.7kOhms | 47kOhms | ||||||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIZ900DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerPair™ | SIZ900 | MOSFET (Metal Oxide) | 48W, 100W | 6-PowerPair™ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Half Bridge) | 30V | 24A, 28A | 7.2mOhm @ 19.4A, 10V | 2.4V @ 250µA | 45nC @ 10V | 1830pF @ 15V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIZ916DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | SIZ916 | MOSFET (Metal Oxide) | 22.7W, 100W | 8-PowerPair® (6x5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Half Bridge) | 30V | 16A, 40A | 6.4mOhm @ 19A, 10V | 2.4V @ 250µA | 26nC @ 10V | 1208pF @ 15V | - | ||||||||||||||||||||||||||||||||||||
| Infineon Technologies AUIRFR540Z | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | AUIRFR540 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | SP001521742 | EAR99 | 8541.29.0095 | 75 | N-Channel | 100 V | 35A (Tc) | 10V | 28.5mOhm @ 21A, 10V | 4V @ 50µA | 59 nC @ 10 V | ±20V | 1690 pF @ 25 V | - | 91W (Tc) | ||||||||||||||||||||||||||||||||
| Infineon Technologies AUIRGDC0250 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | AUIRGDC | Standard | 543 W | SUPER-220™ (TO-273AA) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | 600V, 33A, 5Ohm, 15V | - | 1200 V | 141 A | 99 A | 1.57V @ 15V, 33A | 15mJ (off) | 227 nC | -/485ns | ||||||||||||||||||||||||||||||||||
| Infineon Technologies AUIRGS4062D1TRL | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Tape & Reel (TR) | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | AUIRGS4062 | Standard | 246 W | D²PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | 400V, 24A, 10Ohm, 15V | 102 ns | Trench | 600 V | 59 A | 72 A | 1.77V @ 15V, 24A | 532µJ (on), 311µJ (off) | 77 nC | 19ns/90ns | |||||||||||||||||||||||||||||||||
| Vishay Siliconix SUM110N05-06L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Cut Tape (CT) | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SUM110 | MOSFET (Metal Oxide) | TO-263 (D²Pak) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | N-Channel | 55 V | 110A (Tc) | 6mOhm @ 30A, 10V | 3V @ 250µA | 100 nC @ 10 V | 3300 pF @ 25 V | - | |||||||||||||||||||||||||||||||||||||
| Vishay Siliconix SUP85N15-21-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | SUP85 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 500 | N-Channel | 150 V | 85A (Tc) | 10V | 21mOhm @ 30A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 4750 pF @ 25 V | - | 2.4W (Ta), 300W (Tc) | ||||||||||||||||||||||||||||||||||
| Vishay Siliconix SUP75P05-08-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | SUP75 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 500 | P-Channel | 55 V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 30A, 10V | 3V @ 250µA | 225 nC @ 10 V | ±20V | 8500 pF @ 25 V | - | 3.7W (Ta), 250W (Tc) | ||||||||||||||||||||||||||||||||||
| Infineon Technologies IGW75N60H3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | TrenchStop® | Tube | Active | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | IGW75N60 | Standard | 428 W | PG-TO247-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | 400V, 75A, 5.2Ohm, 15V | Trench Field Stop | 600 V | 140 A | 225 A | 2.3V @ 15V, 75A | 3mJ (on), 1.7mJ (off) | 470 nC | 31ns/265ns | ||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIR640DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SIR640 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 40 V | 60A (Tc) | 4.5V, 10V | 1.7mOhm @ 20A, 10V | 2.3V @ 250µA | 113 nC @ 10 V | ±20V | 4930 pF @ 20 V | - | 6.25W (Ta), 104W (Tc) | ||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIA429DJT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 | SIA429 | MOSFET (Metal Oxide) | PowerPAK® SC-70-6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 12A (Tc) | 1.5V, 4.5V | 20.5mOhm @ 6A, 4.5V | 1V @ 250µA | 62 nC @ 8 V | ±8V | 1750 pF @ 10 V | - | 3.5W (Ta), 19W (Tc) | ||||||||||||||||||||||||||||||||||
| Texas Instruments CSD17313Q2Q1 | Texas Instruments |
Min: 1 Mult: 1 |
/image/Texas Instruments | Automotive, AEC-Q100, NexFET™ | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | CSD17313 | MOSFET (Metal Oxide) | 6-WSON (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 5A (Tc) | 3V, 8V | 30mOhm @ 4A, 8V | 1.8V @ 250µA | 2.7 nC @ 4.5 V | +10V, -8V | 340 pF @ 15 V | - | 2.3W (Ta) | |||||||||||||||||||||||||||||||||
| Renesas Electronics America Inc RJH60D1DPE-00#J3 | Renesas Electronics America Inc |
Min: 1 Mult: 1 |
/image/Renesas Electronics America Inc | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SC-83 | RJH60D | Standard | 52 W | LDPAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | 300V, 10A, 5Ohm, 15V | 100 ns | Trench | 600 V | 20 A | 2.5V @ 15V, 10A | 100µJ (on), 130µJ (off) | 13 nC | 30ns/42ns | ||||||||||||||||||||||||||||||||||
| onsemi FDB2552-F085 | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | Automotive, AEC-Q101, PowerTrench® | Tape & Reel (TR) | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | FDB2552 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | N-Channel | 150 V | 5A (Ta), 37A (Tc) | 10V | 36mOhm @ 16A, 10V | 4V @ 250µA | 51 nC @ 10 V | ±20V | 2800 pF @ 25 V | - | 150W (Tc) | |||||||||||||||||||||||||||||||||
| onsemi FDMS8090 | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | PowerTrench® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | FDMS80 | MOSFET (Metal Oxide) | 2.2W | 8-MLP (5x6), Power56 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 100V | 10A | 13mOhm @ 10A, 10V | 4V @ 250µA | 27nC @ 10V | 1800pF @ 50V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-GA250SA60S | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4 | GA250 | 961 W | Standard | SOT-227 | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 10 | Single | - | 600 V | 400 A | 1.66V @ 15V, 200A | 1 mA | No | 16.25 nF @ 30 V | ||||||||||||||||||||||||||||||||||||
| Toshiba Semiconductor and Storage TK8A60W,S4VX | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
/image/Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK8A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 8A (Ta) | 10V | 500mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5 nC @ 10 V | ±30V | 570 pF @ 300 V | - | 30W (Tc) | ||||||||||||||||||||||||||||||||||
| NXP USA Inc. AFT21S232SR5 | NXP USA Inc. |
Min: 1 Mult: 1 |
/image/NXP USA Inc. | - | Tape & Reel (TR) | Obsolete | 65 V | Chassis Mount | NI-780S | AFT21 | 2.11GHz | LDMOS | NI-780S | ROHS3 Compliant | Not Applicable | REACH Unaffected | 5A991G | 8541.29.0095 | 50 | - | 1.5 A | 50W | 16.7dB | - | 28 V |
