Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - Off State | Current - On State (It (RMS)) (Max) | Voltage - Gate Trigger (Vgt) (Max) | Current - Non Rep. Surge 50, 60Hz (Itsm) | Current - Gate Trigger (Igt) (Max) | Voltage - On State (Vtm) (Max) | Current - On State (It (AV)) (Max) | Current - Off State (Max) | SCR Type | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Diode Type | Voltage - Peak Reverse (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition |
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Vishay Siliconix SIA106DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® Gen IV | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 | SIA106 | MOSFET (Metal Oxide) | PowerPAK® SC-70-6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 10A (Ta), 12A (Tc) | 7.5V, 10V | 18.5mOhm @ 4A, 10V | 4V @ 250µA | 13.5 nC @ 10 V | ±20V | 540 pF @ 30 V | - | 3.5W (Ta), 19W (Tc) | |||||||||||||||||||||||||||||||
Vishay Siliconix SISH129DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8SH | SISH129 | MOSFET (Metal Oxide) | PowerPAK® 1212-8SH | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 14.4A (Ta), 35A (Tc) | 4.5V, 10V | 11.4mOhm @ 14.4A, 10V | 2.8V @ 250µA | 71 nC @ 10 V | ±20V | 3345 pF @ 15 V | - | 3.8W (Ta), 52.1W (Tc) | |||||||||||||||||||||||||||||||
Micro Commercial Co MURS3G-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
/image/Micro Commercial Co | - | Tape & Reel (TR) | Active | Surface Mount | DO-214AB, SMC | MURS3 | Standard | SMC (DO-214AB) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | 1 V @ 3 A | 35 ns | 5 µA @ 400 V | -55°C ~ 150°C | 3A | 40pF @ 4V, 1MHz | ||||||||||||||||||||||||||||||||||
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Powerex Inc. TCS445340HDH | Powerex Inc. |
Min: 1 Mult: 1 |
/image/Powerex Inc. | - | Bulk | Active | -40°C ~ 125°C (TJ) | Chassis Mount | TO-200AF | TCS445340 | Hockey Puck | download | RoHS Compliant | EAR99 | 8541.30.0080 | 1 | 4.5 kV | 6480 A | 4.5 V | 41012A, 43500A | 250 mA | 1.8 V | 4125 A | 300 mA | Standard Recovery | ||||||||||||||||||||||||||||||||||
onsemi 2SA1371D-AE | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | - | Bulk | Obsolete | - | - | - | 2SA1371 | - | 1 (Unlimited) | REACH Unaffected | OBSOLETE | 0000.00.0000 | 1 | - | - | - | - | - | |||||||||||||||||||||||||||||||||||||||
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onsemi MCH6606-TL-EX | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | - | Bulk | Obsolete | - | - | - | MCH6606 | - | - | - | Not Applicable | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | - | - | - | - | - | - | - | - | |||||||||||||||||||||||||||||||||
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Taiwan Semiconductor Corporation KBP102G C2 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
/image/Taiwan Semiconductor Corporation | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBP | Standard | KBP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 1,000 | 1 V @ 1 A | 10 µA @ 100 V | 1 A | Single Phase | 100 V | ||||||||||||||||||||||||||||||||||||
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Taiwan Semiconductor Corporation KBP202G C2 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
/image/Taiwan Semiconductor Corporation | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBP | Standard | KBP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 1,000 | 1.2 V @ 2 A | 10 µA @ 100 V | 2 A | Single Phase | 100 V | ||||||||||||||||||||||||||||||||||||
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Taiwan Semiconductor Corporation KBP205G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
/image/Taiwan Semiconductor Corporation | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBP | Standard | KBP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 1,000 | 1.2 V @ 2 A | 10 µA @ 600 V | 2 A | Single Phase | 600 V | ||||||||||||||||||||||||||||||||||||
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Taiwan Semiconductor Corporation KBP307G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
/image/Taiwan Semiconductor Corporation | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBP | Standard | KBP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 1,000 | 1.1 V @ 3 A | 10 µA @ 1000 V | 3 A | Single Phase | 1 kV | ||||||||||||||||||||||||||||||||||||
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Renesas Electronics America Inc UPA2752GR(1)-E1-A | Renesas Electronics America Inc |
Min: 1 Mult: 1 |
/image/Renesas Electronics America Inc | - | Tape & Reel (TR) | Obsolete | ROHS3 Compliant | Vendor Undefined | OBSOLETE | 0000.00.0000 | 3,000 | - | |||||||||||||||||||||||||||||||||||||||||||||||
Taiwan Semiconductor Corporation KBU603G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
/image/Taiwan Semiconductor Corporation | - | Tray | Discontinued at Digi-Key | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU603 | Standard | KBU | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | KBU603GT0 | EAR99 | 8541.10.0080 | 500 | 1.1 V @ 6 A | 5 µA @ 200 V | 6 A | Single Phase | 200 V | |||||||||||||||||||||||||||||||||||
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Vishay Siliconix SIA923EDJ-T4-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Dual | SIA923 | MOSFET (Metal Oxide) | 1.9W (Ta), 7.8W (Tc) | PowerPAK® SC-70-6 Dual | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 P-Channel (Dual) | 20V | 4.5A (Ta), 4.5A (Tc) | 54mOhm @ 3.8A, 4.5V | 1.4V @ 250µA | 25nC @ 8V | - | - | ||||||||||||||||||||||||||||||||
Vishay Siliconix SIA444DJT-T4-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 | SIA444 | MOSFET (Metal Oxide) | PowerPAK® SC-70-6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 11A (Ta), 12A (Tc) | 4.5V, 10V | 17mOhm @ 7.4A, 10V | 2.2V @ 250µA | 15 nC @ 10 V | ±20V | 560 pF @ 15 V | - | 3.5W (Ta), 19W (Tc) | |||||||||||||||||||||||||||||||
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onsemi MTD20P03HDL1G | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | * | Obsolete | MTD20 | 1 (Unlimited) | REACH Unaffected | OBSOLETE | 0000.00.0000 | 75 | ||||||||||||||||||||||||||||||||||||||||||||||||
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onsemi MMSZ3V6ET1 | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | * | Obsolete | MMSZ3V | 1 (Unlimited) | REACH Unaffected | OBSOLETE | 0000.00.0000 | 3,000 | ||||||||||||||||||||||||||||||||||||||||||||||||
Vishay General Semiconductor - Diodes Division FEPB6AT-E3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | FEPB6 | Standard | TO-263AB (D²PAK) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 50 V | 6A | 975 mV @ 3 A | 35 ns | 5 µA @ 50 V | -55°C ~ 150°C | |||||||||||||||||||||||||||||||||||
Vishay General Semiconductor - Diodes Division FESE16CT-E3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Through Hole | TO-220-2 | FESE16 | Standard | TO-220AC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | 975 mV @ 16 A | 35 ns | 10 µA @ 150 V | -65°C ~ 150°C | |||||||||||||||||||||||||||||||||||||
Vishay General Semiconductor - Diodes Division FESE8AT-E3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Through Hole | TO-220-2 | FESE8 | Standard | TO-220AC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | 950 mV @ 8 A | 35 ns | 10 µA @ 50 V | -55°C ~ 150°C | |||||||||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division G3SBA60L-5700E3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | G3SBA60 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 2 A | 5 µA @ 600 V | 2.3 A | Single Phase | 600 V | ||||||||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division G3SBA60L-5703E3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | G3SBA60 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 2 A | 5 µA @ 600 V | 2.3 A | Single Phase | 600 V | ||||||||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division G3SBA60L-5705M3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | G3SBA60 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 2 A | 5 µA @ 600 V | 2.3 A | Single Phase | 600 V | ||||||||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division G3SBA60L-6088M3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | G3SBA60 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 2 A | 5 µA @ 600 V | 2.3 A | Single Phase | 600 V | ||||||||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division GBL06L-5303E3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL06 | Standard | GBL | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 4 A | 5 µA @ 600 V | 3 A | Single Phase | 600 V | ||||||||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division GBL06L-6870E3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL06 | Standard | GBL | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 4 A | 5 µA @ 600 V | 3 A | Single Phase | 600 V | ||||||||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division GBU4A-1E3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU4 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 4 A | 5 µA @ 50 V | 3 A | Single Phase | 50 V | ||||||||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division GBU4DL-6419E3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU4 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 4 A | 5 µA @ 200 V | 3 A | Single Phase | 200 V | ||||||||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division GBU4DL-6419M3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU4 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 4 A | 5 µA @ 200 V | 3 A | Single Phase | 200 V | ||||||||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division GBU4JL-5303M3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU4 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 4 A | 5 µA @ 600 V | 3 A | Single Phase | 600 V | ||||||||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division GBU4JL-5708M3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU4 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 4 A | 5 µA @ 600 V | 3 A | Single Phase | 600 V |
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