Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Type | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Current | Voltage | Voltage - Isolation | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Diode Type | Voltage - Peak Reverse (Max) |
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Vishay General Semiconductor - Diodes Division MBL108S-01M3/I | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | MBL1 | Standard | 4-SMD | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 950 mV @ 400 mA | 5 µA @ 800 V | 1 A | Single Phase | 800 V | ||||||||||||||||||||||||||
Vishay General Semiconductor - Diodes Division SB360L-003E3/72 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Through Hole | DO-201AD, Axial | SB360 | Schottky | DO-201AD | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 680 mV @ 3 A | 500 µA @ 60 V | -65°C ~ 150°C | ||||||||||||||||||||||||||||
Vishay General Semiconductor - Diodes Division SB540L-6314E3/72 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Through Hole | DO-201AD, Axial | SB540 | Schottky | DO-201AD | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 480 mV @ 5 A | 500 µA @ 40 V | -65°C ~ 150°C | ||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division SX050H100S4PT | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Surface Mount | Die | SX050 | Schottky | Die | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | 770 mV @ 1 A | 1 µA @ 100 V | -65°C ~ 175°C | |||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division SX067H100S4PT | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Surface Mount | Die | SX067 | Schottky | Die | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | 900 mV @ 8 A | 2 µA @ 100 V | -65°C ~ 175°C | |||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division SX073H045S4PT | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Surface Mount | Die | SX073 | Schottky | Die | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 45 V | 630 mV @ 7.5 A | 50 µA @ 45 V | -65°C ~ 175°C | |||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division SX085H045S4PU | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Surface Mount | Die | SX085 | Schottky | Die | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 45 V | 630 mV @ 10 A | 100 µA @ 45 V | -65°C ~ 175°C | |||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division SX110H060S4PU | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Surface Mount | Die | SX110 | Schottky | Die | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 6.8 V @ 15 A | 60 µA @ 60 V | -65°C ~ 175°C | |||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division TY080S200A6OU | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Surface Mount | Die | TY080 | Schottky | Die | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | 1.7 V @ 10 A | 150 µA @ 200 V | -40°C ~ 150°C | |||||||||||||||||||||||||||
Vishay General Semiconductor - Diodes Division UGB15HTHE3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tube | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | UGB15 | Standard | TO-263AB (D²PAK) | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 500 V | 1.75 V @ 15 A | 50 ns | 30 µA @ 500 V | -55°C ~ 150°C | |||||||||||||||||||||||||||
Taiwan Semiconductor Corporation KBU603G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
/image/Taiwan Semiconductor Corporation | - | Tray | Discontinued at Digi-Key | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU603 | Standard | KBU | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | KBU603GT0 | EAR99 | 8541.10.0080 | 500 | 1.1 V @ 6 A | 5 µA @ 200 V | 6 A | Single Phase | 200 V | ||||||||||||||||||||||||
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Vishay Siliconix SIA923EDJ-T4-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Dual | SIA923 | MOSFET (Metal Oxide) | 1.9W (Ta), 7.8W (Tc) | PowerPAK® SC-70-6 Dual | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 P-Channel (Dual) | 20V | 4.5A (Ta), 4.5A (Tc) | 54mOhm @ 3.8A, 4.5V | 1.4V @ 250µA | 25nC @ 8V | - | - | |||||||||||||||||||||
Vishay Siliconix SIA444DJT-T4-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 | SIA444 | MOSFET (Metal Oxide) | PowerPAK® SC-70-6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 11A (Ta), 12A (Tc) | 4.5V, 10V | 17mOhm @ 7.4A, 10V | 2.2V @ 250µA | 15 nC @ 10 V | ±20V | 560 pF @ 15 V | - | 3.5W (Ta), 19W (Tc) | ||||||||||||||||||||
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onsemi MTD20P03HDL1G | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | * | Obsolete | MTD20 | 1 (Unlimited) | REACH Unaffected | OBSOLETE | 0000.00.0000 | 75 | |||||||||||||||||||||||||||||||||||||
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onsemi MMSZ3V6ET1 | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | * | Obsolete | MMSZ3V | 1 (Unlimited) | REACH Unaffected | OBSOLETE | 0000.00.0000 | 3,000 | |||||||||||||||||||||||||||||||||||||
Vishay General Semiconductor - Diodes Division FEPB6AT-E3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | FEPB6 | Standard | TO-263AB (D²PAK) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 50 V | 6A | 975 mV @ 3 A | 35 ns | 5 µA @ 50 V | -55°C ~ 150°C | ||||||||||||||||||||||||
Vishay General Semiconductor - Diodes Division FESE16CT-E3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Through Hole | TO-220-2 | FESE16 | Standard | TO-220AC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | 975 mV @ 16 A | 35 ns | 10 µA @ 150 V | -65°C ~ 150°C | ||||||||||||||||||||||||||
Vishay General Semiconductor - Diodes Division FESE8AT-E3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Through Hole | TO-220-2 | FESE8 | Standard | TO-220AC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | 950 mV @ 8 A | 35 ns | 10 µA @ 50 V | -55°C ~ 150°C | ||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division G3SBA60L-5700E3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | G3SBA60 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 2 A | 5 µA @ 600 V | 2.3 A | Single Phase | 600 V | |||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division G3SBA60L-5703E3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | G3SBA60 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 2 A | 5 µA @ 600 V | 2.3 A | Single Phase | 600 V | |||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division G3SBA60L-5705M3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | G3SBA60 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 2 A | 5 µA @ 600 V | 2.3 A | Single Phase | 600 V | |||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division G3SBA60L-6088M3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | G3SBA60 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 2 A | 5 µA @ 600 V | 2.3 A | Single Phase | 600 V | |||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division GBL06L-5303E3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL06 | Standard | GBL | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 4 A | 5 µA @ 600 V | 3 A | Single Phase | 600 V | |||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division GBL06L-6870E3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL06 | Standard | GBL | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 4 A | 5 µA @ 600 V | 3 A | Single Phase | 600 V | |||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division GBU4A-1E3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU4 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 4 A | 5 µA @ 50 V | 3 A | Single Phase | 50 V | |||||||||||||||||||||||||
Vishay Siliconix SISS22DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® Gen IV | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | SISS22 | MOSFET (Metal Oxide) | PowerPAK® 1212-8S | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 25A (Ta), 90.6A (Tc) | 7.5V, 10V | 4mOhm @ 15A, 10V | 3.6V @ 250µA | 44 nC @ 10 V | ±20V | 1870 pF @ 30 V | - | 5W (Ta), 65.7W (Tc) | ||||||||||||||||||||
Vishay Siliconix SIR122DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® Gen IV | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SIR122 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 80 V | 16.7A (Ta), 59.6A (Tc) | 7.5V, 10V | 7.4mOhm @ 10A, 10V | 3.8V @ 250µA | 44 nC @ 10 V | ±20V | 1950 pF @ 40 V | - | 5.2W (Ta), 65.7W (Tc) | ||||||||||||||||||||
Vishay Siliconix SIHB35N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | EF | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIHB35 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 32A (Tc) | 10V | 97mOhm @ 17A, 10V | 4V @ 250µA | 134 nC @ 10 V | ±30V | 2568 pF @ 100 V | - | 250W (Tc) | ||||||||||||||||||||
Vishay Siliconix SIHF35N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | EF | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | SIHF35 | MOSFET (Metal Oxide) | TO-220 Full Pack | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 600 V | 32A (Tc) | 10V | 97mOhm @ 17A, 10V | 4V @ 250µA | 134 nC @ 10 V | ±30V | 2568 pF @ 100 V | - | 39W (Tc) | ||||||||||||||||||||
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Infineon Technologies IRAM538-1065AE | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Tube | Obsolete | Through Hole | - | IGBT | 1 (Unlimited) | REACH Unaffected | SP001652912 | OBSOLETE | 0000.00.0000 | 130 | 3 Phase | 10 A | 600 V | - |
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