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Discrete Semiconductor Products(28073)
| Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Vishay General Semiconductor - Diodes Division VS-APH3006LHN3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101, FRED Pt® | Tube | Active | Through Hole | TO-247-3 | APH3006 | Standard | TO-247AD | download | Not Applicable | REACH Unaffected | EAR99 | 8541.10.0080 | 25 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 2.65 V @ 30 A | 26 ns | 30 µA @ 600 V | -55°C ~ 175°C | 30A | - | |||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-E4PH6006L-N3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | FRED Pt® | Tube | Active | Through Hole | TO-247-2 | E4PH6006 | Standard | TO-247AC Modified | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | EAR99 | 8541.10.0080 | 25 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 2 V @ 60 A | 68 ns | 50 µA @ 600 V | -55°C ~ 175°C | 60A | - | ||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-C4PU6006L-N3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | FRED Pt® | Tube | Active | Through Hole | TO-247-3 | C4PU6006 | Standard | TO-247AD | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | EAR99 | 8541.10.0080 | 25 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 1.6 V @ 30 A | 65 ns | 50 µA @ 600 V | -55°C ~ 175°C | 30A | - | ||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-C4PH6006L-N3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | FRED Pt® | Tube | Active | Through Hole | TO-247-3 | C4PH6006 | Standard | TO-247AD | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | EAR99 | 8541.10.0080 | 25 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 2 V @ 30 A | 55 ns | 50 µA @ 600 V | -55°C ~ 175°C | 30A | - | ||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-CPU6006LHN3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101, FRED Pt® | Tube | Active | Through Hole | TO-247-3 | CPU6006 | Standard | TO-247AD | download | Not Applicable | REACH Unaffected | EAR99 | 8541.10.0080 | 25 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 1.75 V @ 30 A | 42 ns | 30 µA @ 600 V | -55°C ~ 175°C | 30A | - | |||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-EPU6006LHN3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101, FRED Pt® | Tube | Active | Through Hole | TO-247-2 | EPU6006 | Standard | TO-247AD | download | Not Applicable | REACH Unaffected | EAR99 | 8541.10.0080 | 25 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 1.5 V @ 60 A | 110 ns | 30 µA @ 600 V | -55°C ~ 175°C | 60A | - | |||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-E4TU2006TFP-N3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | FRED Pt® | Tube | Obsolete | Through Hole | TO-220-2 Full Pack | E4TU20 | Standard | TO-220-2 Full Pack | download | Not Applicable | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 1.63 V @ 20 A | 61 ns | 15 µA @ 600 V | -55°C ~ 175°C | 20A | - | ||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division V6KL45DUHM3/I | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 8-PowerTDFN | V6KL45 | Schottky | FlatPAK 5x6 (Dual) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 6,000 | Fast Recovery =< 500ns, > 200mA (Io) | 2 Independent | 45 V | 6A | 540 mV @ 3 A | 450 µA @ 45 V | -40°C ~ 150°C | |||||||||||||||||||
| Infineon Technologies IDH06G65C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Tube | Active | Through Hole | TO-220-2 | IDH06G65 | SiC (Silicon Carbide) Schottky | PG-TO220-2 | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.35 V @ 6 A | 0 ns | 20 µA @ 420 V | -55°C ~ 175°C | 16A | 302pF @ 1V, 1MHz | ||||||||||||||||||
| Infineon Technologies IPA60R099P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | CoolMOS™ P7 | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | IPA60R099 | MOSFET (Metal Oxide) | PG-TO220-FP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 31A (Tc) | 10V | 99mOhm @ 10.5A, 10V | 4V @ 530µA | 45 nC @ 10 V | ±20V | 1952 pF @ 400 V | - | 29W (Tc) | ||||||||||||||
| Semtech Corporation 1N4942C.TR | Semtech Corporation |
Min: 1 Mult: 1 |
/image/Semtech Corporation | - | Tape & Reel (TR) | Discontinued at Digi-Key | Through Hole | Axial | 1N4942 | Standard | Axial | download | Not Applicable | 1N4942C.CT | EAR99 | 8541.10.0080 | 500 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | 1.2 V @ 1 A | 150 ns | 500 nA @ 200 V | - | 1A | 27pF @ 5V, 1MHz | |||||||||||||||||||
| Vishay Siliconix SI1428EDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SI1428 | MOSFET (Metal Oxide) | SC-70-6 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 4A (Tc) | 2.5V, 10V | 45mOhm @ 3.7A, 10V | 1.3V @ 250µA | 13.5 nC @ 10 V | ±12V | - | 2.8W (Tc) | ||||||||||||||||
| Vishay Siliconix SI1900DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SI1900 | MOSFET (Metal Oxide) | 300mW, 270mW | SC-70-6 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 30V | 630mA (Ta), 590mA (Ta) | 480mOhm @ 590mA, 10V | 3V @ 250µA | 1.4nC @ 10V | - | - | |||||||||||||||||
| Vishay Siliconix SI4413DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tape & Reel (TR) | Active | -55°C ~ 125°C | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | SI4413 | MOSFET (Metal Oxide) | 8-SOIC | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | P-Channel | - | 4.5V, 10V | 5.5mOhm @ 10A, 10V | 1.6V @ 250µA | 114 nC @ 10 V | - | 4780 pF @ 15 V | - | - | ||||||||||||||||||
 |
Vishay Siliconix SI5446DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® ChipFET™ Single | SI5446 | MOSFET (Metal Oxide) | PowerPAK® ChipFet Single | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 25A (Tc) | 4.5V, 10V | 6.4mOhm @ 10A, 10V | 2.5V @ 250µA | 30 nC @ 10 V | +20V, -16V | 1610 pF @ 15 V | - | 31W (Tc) | |||||||||||||||
| Vishay Siliconix SIA472EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 | SIA472 | MOSFET (Metal Oxide) | PowerPAK® SC-70-6 Single | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 12A (Tc) | 2.5V, 4.5V | 20mOhm @ 10.8A, 4.5V | 1.5V @ 250µA | 36 nC @ 10 V | ±12V | 1265 pF @ 15 V | - | 19.2W (Tc) | ||||||||||||||||
| Vishay Siliconix SIHA22N60EL-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | EL | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | SIHA22 | MOSFET (Metal Oxide) | TO-220 Full Pack | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 600 V | 21A (Tc) | 10V | 197mOhm @ 11A, 10V | 5V @ 250µA | 74 nC @ 10 V | ±30V | 1690 pF @ 100 V | - | 35W (Tc) | ||||||||||||||||
| Vishay Siliconix SIHB12N60ET1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | E | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIHB12 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 800 | N-Channel | 600 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | - | 147W (Tc) | ||||||||||||||||
| Vishay Siliconix SIHB12N60ET5-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | E | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIHB12 | MOSFET (Metal Oxide) | D²PAK (TO-263) | 1 (Unlimited) | EAR99 | 8541.29.0095 | 800 | N-Channel | 600 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | - | 147W (Tc) | |||||||||||||||||
| Vishay Siliconix SIHB15N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIHB15 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 650 V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 96 nC @ 10 V | ±30V | 1640 pF @ 100 V | - | 34W (Tc) | ||||||||||||||||
| Vishay Siliconix SIHB22N60ET5-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | E | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIHB22 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 800 | N-Channel | 600 V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±30V | 1920 pF @ 100 V | - | 227W (Tc) | ||||||||||||||||
| Vishay Siliconix SIHB25N50E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIHB25 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 500 V | 26A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±30V | 1980 pF @ 100 V | - | 250W (Tc) | ||||||||||||||||
| Vishay Siliconix SIHFS11N50A-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIHFS11 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 500 V | 11A (Tc) | 10V | 520mOhm @ 6.6A, 10V | 4V @ 250µA | 52 nC @ 10 V | ±30V | 1423 pF @ 25 V | - | 170W (Tc) | ||||||||||||||||
| Vishay Siliconix SIR164DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® Gen III | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SIR164 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 50A (Tc) | 4.5V, 10V | 2.5mOhm @ 15A, 10V | 2.5V @ 250µA | 123 nC @ 10 V | ±20V | 3950 pF @ 15 V | - | 69W (Tc) | ||||||||||||||||
| Vishay Siliconix SIR474DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SIR474 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 20A (Tc) | 4.5V, 10V | 9.5mOhm @ 10A, 10V | 2.2V @ 250µA | 27 nC @ 10 V | ±20V | 985 pF @ 15 V | - | 29.8W (Tc) | ||||||||||||||||
|
Vishay Siliconix SIR798DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SIR798 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 60A (Tc) | 4.5V, 10V | 2.05Ohm @ 20A, 10V | 2.5V @ 250µA | 130 nC @ 10 V | ±20V | 5050 pF @ 15 V | Schottky Diode (Body) | 83W (Tc) | |||||||||||||||
|
Vishay Siliconix SIR800DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® Gen III | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SIR800 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 20 V | 50A (Tc) | 2.5V, 10V | 2.3mOhm @ 15A, 10V | 1.5V @ 250µA | 133 nC @ 10 V | ±12V | 5125 pF @ 10 V | - | 69W (Tc) | ||||||||||||||||
| Vishay Siliconix SIR871DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SIR871 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 100 V | 48A (Tc) | 4.5V, 10V | 20mOhm @ 20A, 10V | 2.6V @ 250µA | 90 nC @ 10 V | ±20V | 3395 pF @ 50 V | - | 89W (Tc) | ||||||||||||||||
|
Vishay Siliconix SIRA60DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® Gen IV | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SIRA60 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 100A (Tc) | 4.5V, 10V | 0.94mOhm @ 20A, 10V | 2.2V @ 250µA | 125 nC @ 10 V | +20V, -16V | 7650 pF @ 15 V | - | 57W (Tc) | |||||||||||||||
| Vishay Siliconix SIS444DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | SIS444 | MOSFET (Metal Oxide) | PowerPAK® 1212-8 | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 35A (Tc) | 4.5V, 10V | 3.3mOhm @ 10A, 10V | 2.3V @ 250µA | 102 nC @ 10 V | ±20V | 3065 pF @ 15 V | - | 52W (Tc) |
