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Discrete Semiconductor Products(28073)
| Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Structure | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Current - Hold (Ih) (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - Off State | Current - On State (It (RMS)) (Max) | Voltage - Gate Trigger (Vgt) (Max) | Current - Non Rep. Surge 50, 60Hz (Itsm) | Current - Gate Trigger (Igt) (Max) | Current - On State (It (AV)) (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Number of SCRs, Diodes | Diode Type | Voltage - Peak Reverse (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Vishay General Semiconductor - Diodes Division SB560L-6211E3/72 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Through Hole | DO-201AD, Axial | SB560 | Schottky | DO-201AD | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 650 mV @ 5 A | 500 µA @ 60 V | -65°C ~ 150°C | ||||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division SX070H150S6KW-01 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | - | - | SX070 | - | - | ROHS3 Compliant | 1 (Unlimited) | OBSOLETE | 0000.00.0000 | 1 | - | - | ||||||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division SX073H060S4PT | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Surface Mount | Die | SX073 | Schottky | Die | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 7.3 V @ 7.5 A | 50 µA @ 60 V | -65°C ~ 175°C | |||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division TY054S200S6OT | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Surface Mount | Die | TY054 | Schottky | Die | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | 1.4 V @ 3 A | 50 µA @ 200 V | -40°C ~ 150°C | |||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division TY080S100A6JW | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Surface Mount | Die | TY080 | Schottky | Die | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | 790 mV @ 10 A | 800 µA @ 100 V | -40°C ~ 150°C | |||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division TY119S200A6OV | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Surface Mount | Die | TY119 | Schottky | Die | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | 1.48 V @ 30 A | 200 µA @ 200 V | -40°C ~ 150°C | |||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division UGB12HT-E3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | UGB12 | Standard | TO-263AB (D²PAK) | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 500 V | 1.75 V @ 12 A | 50 ns | 30 µA @ 500 V | -55°C ~ 150°C | |||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division UGE10BCT-E3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Through Hole | TO-220-3 | UGE10 | Standard | TO-220-3 | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 100 V | 5A | 1.1 V @ 5 A | 25 ns | 10 µA @ 100 V | -40°C ~ 150°C | |||||||||||||||||||||||||||||
|
onsemi MMSZ22ET1 | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | * | Obsolete | MMSZ22 | 1 (Unlimited) | REACH Unaffected | OBSOLETE | 0000.00.0000 | 3,000 | |||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division V20D45CHM3/I | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101, eSMP®, TMBS® | Tape & Reel (TR) | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | V20D45 | Schottky | TO-263AC (SMPD) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 2,000 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 45 V | 10A | 570 mV @ 10 A | 1 mA @ 45 V | -40°C ~ 150°C | ||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division G2SB60L-5751M3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | G2SB60 | Standard | GBL | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 750 mA | 5 µA @ 600 V | 1.5 A | Single Phase | 600 V | |||||||||||||||||||||||||||||
|
Vishay General Semiconductor - Diodes Division G3SBA60L-5702M3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | G3SBA60 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 2 A | 5 µA @ 600 V | 2.3 A | Single Phase | 600 V | |||||||||||||||||||||||||||||
|
Vishay General Semiconductor - Diodes Division G3SBA60L-5703M3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | G3SBA60 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 2 A | 5 µA @ 600 V | 2.3 A | Single Phase | 600 V | |||||||||||||||||||||||||||||
|
Vishay General Semiconductor - Diodes Division G3SBA60L-5704M3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | G3SBA60 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 2 A | 5 µA @ 600 V | 2.3 A | Single Phase | 600 V | |||||||||||||||||||||||||||||
|
Vishay General Semiconductor - Diodes Division G3SBA60L-5705E3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | G3SBA60 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 2 A | 5 µA @ 600 V | 2.3 A | Single Phase | 600 V | |||||||||||||||||||||||||||||
|
Vishay General Semiconductor - Diodes Division G3SBA60L-5708M3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | G3SBA60 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 2 A | 5 µA @ 600 V | 2.3 A | Single Phase | 600 V | |||||||||||||||||||||||||||||
|
Vishay General Semiconductor - Diodes Division G3SBA60L-6841M3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | G3SBA60 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 2 A | 5 µA @ 600 V | 2.3 A | Single Phase | 600 V | |||||||||||||||||||||||||||||
|
Vishay General Semiconductor - Diodes Division G5SBA60L-6088M3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | G5SBA60 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1.05 V @ 3 A | 5 µA @ 600 V | 2.8 A | Single Phase | 600 V | |||||||||||||||||||||||||||||
|
Vishay General Semiconductor - Diodes Division GBL06L-5306E3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL06 | Standard | GBL | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 4 A | 5 µA @ 600 V | 3 A | Single Phase | 600 V | |||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division GBL08L-7000E3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL08 | Standard | GBL | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 4 A | 5 µA @ 800 V | 3 A | Single Phase | 800 V | |||||||||||||||||||||||||||||
|
Vishay General Semiconductor - Diodes Division GBLA06L-6985E3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBLA06 | Standard | GBL | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | 1 V @ 4 A | 5 µA @ 600 V | 3 A | Single Phase | 600 V | |||||||||||||||||||||||||||||
| Vishay Siliconix SQS407ENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | Automotive, AEC-Q101, TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8W | SQS407 | MOSFET (Metal Oxide) | PowerPAK® 1212-8W | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 16A (Tc) | 4.5V, 10V | 10.8mOhm @ 12A, 10V | 2.5V @ 250µA | 77 nC @ 10 V | ±20V | 4572 pF @ 20 V | - | 62.5W (Tc) | ||||||||||||||||||||||||
| Vishay Siliconix SIR800ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® Gen IV | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SIR800 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 20 V | 50.2A (Ta), 177A (Tc) | 2.5V, 10V | 1.35mOhm @ 10A, 10V | 1.5V @ 250µA | 53 nC @ 10 V | +12V, -8V | 3415 pF @ 10 V | - | 5W (Ta), 62.5W (Tc) | ||||||||||||||||||||||||
| Vishay Siliconix SISH110DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® Gen II | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8SH | SISH110 | MOSFET (Metal Oxide) | PowerPAK® 1212-8SH | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 20 V | 13.5A (Ta) | 4.5V, 10V | 5.3mOhm @ 21.1A, 10V | 2.5V @ 250µA | 21 nC @ 4.5 V | ±20V | - | 1.5W (Ta) | |||||||||||||||||||||||||
| Vishay Siliconix SIJ186DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® Gen IV | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SIJ186 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 23A (Ta), 79.4A (Tc) | 6V, 10V | 4.5mOhm @ 15A, 10V | 3.6V @ 250µA | 37 nC @ 10 V | ±20V | 1710 pF @ 30 V | - | 5W (Ta), 57W (Tc) | ||||||||||||||||||||||||
| Vishay Siliconix SIHA180N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | E | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | SIHA180 | MOSFET (Metal Oxide) | TO-220 Full Pack | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 19A (Tc) | 10V | 180mOhm @ 9.5A, 10V | 5V @ 250µA | 33 nC @ 10 V | ±30V | 1085 pF @ 100 V | - | 33W (Tc) | ||||||||||||||||||||||||
| STMicroelectronics STF24N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
/image/STMicroelectronics | MDmesh™ M6 | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | STF24 | MOSFET (Metal Oxide) | TO-220FP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 497-18246 | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 17A (Tj) | 10V | 190mOhm @ 8.5A, 10V | 4.75V @ 250µA | 23 nC @ 10 V | ±25V | 960 pF @ 100 V | - | 30W (Tc) | ||||||||||||||||||||||
| Infineon Technologies D6001N50TS05XPSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Bulk | Obsolete | Chassis Mount | DO-200AE | D6001N50 | Standard | BG-D15026K-1 | download | 1 (Unlimited) | REACH Unaffected | SP000541776 | EAR99 | 8541.10.0080 | 1 | Standard Recovery >500ns, > 200mA (Io) | 5000 V | 1.3 V @ 6000 A | 400 mA @ 5000 V | -40°C ~ 160°C | 8010A | - | ||||||||||||||||||||||||||||
|
Infineon Technologies T1651N70TOHPRXPSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Bulk | Obsolete | -40°C ~ 125°C | Chassis Mount | TO-200AF | T1651N | Single | download | 1 (Unlimited) | REACH Unaffected | SP000091177 | OBSOLETE | 0000.00.0000 | 1 | 350 mA | 7 kV | 2620 A | 2.5 V | 50000A @ 50Hz | 350 mA | 2350 A | 1 SCR | ||||||||||||||||||||||||||
|
Infineon Technologies T1851N70TS09XPSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Bulk | Obsolete | -40°C ~ 125°C | Chassis Mount | TO-200AF | T1851N | Single | 1 (Unlimited) | REACH Unaffected | SP000851548 | OBSOLETE | 0000.00.0000 | 1 | 350 mA | 7 kV | 2880 A | 2.5 V | 50000A @ 50Hz | 350 mA | 2550 A | 1 SCR |
