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Discrete Semiconductor Products(28073)
| Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Tolerance | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Power - Max | Input | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Current Rating (Amps) | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Vce(on) (Max) @ Vge, Ic | Voltage - Test | Diode Type | Voltage - Peak Reverse (Max) | Current - Collector Cutoff (Max) | NTC Thermistor | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) | Input Capacitance (Cies) @ Vce |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXYS MIEB101W1200EH | IXYS |
Min: 1 Mult: 1 |
/image/IXYS | - | Box | Active | -40°C ~ 125°C (TJ) | Chassis Mount | E3 | MIEB101 | 630 W | Standard | E3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 5 | Three Phase Inverter | - | 1200 V | 183 A | 2.2V @ 15V, 100A | 300 µA | No | 7.43 nF @ 25 V | ||||||||||||||||||||||||||||||||||||
| IXYS VUO162-16NO7 | IXYS |
Min: 1 Mult: 1 |
/image/IXYS | - | Box | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | VUO162 | Standard | PWS-E-Flat | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 5 | 1.16 V @ 60 A | 100 µA @ 1600 V | 175 A | Three Phase | 1.6 kV | |||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division V10D45C-M3/I | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | eSMP®, TMBS® | Tape & Reel (TR) | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | V10D45 | Schottky | SMPD | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 2,000 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 45 V | 5A | 580 mV @ 5 A | 500 µA @ 45 V | -40°C ~ 150°C | ||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division V30D60C-M3/I | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | eSMP®, TMBS® | Tape & Reel (TR) | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | V30D60 | Schottky | SMPD | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 2,000 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 60 V | 15A | 700 mV @ 15 A | 1.2 mA @ 60 V | -40°C ~ 150°C | ||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division V10D100C-M3/I | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | eSMP®, TMBS® | Tape & Reel (TR) | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | V10D100 | Schottky | SMPD | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 2,000 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 100 V | 5A | 750 mV @ 5 A | 500 µA @ 100 V | -40°C ~ 150°C | ||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division V20DM120C-M3/I | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | eSMP®, TMBS® | Tape & Reel (TR) | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | V20DM120 | Schottky | SMPD | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 2,000 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 120 V | 10A | 930 mV @ 10 A | 600 µA @ 120 V | -40°C ~ 150°C | ||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division G3SBA20-M3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tray | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | G3SBA20 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 250 | 1 V @ 2 A | 5 µA @ 200 V | 2.3 A | Single Phase | 200 V | |||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division G3SBA20L-M3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | G3SBA20 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 20 | 1 V @ 2 A | 5 µA @ 200 V | 2.3 A | Single Phase | 200 V | |||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division G5SBA60-M3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | G5SBA60 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 800 | 1.05 V @ 3 A | 5 µA @ 600 V | 2.8 A | Single Phase | 600 V | |||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division G5SBA60L-M3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | - | Through Hole | 4-SIP, GBU | G5SBA60 | Standard | GBU | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 20 | 1.05 V @ 3 A | 5 µA @ 600 V | 2.8 A | Single Phase | 600 V | ||||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division G5SBA80-M3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | G5SBA80 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 800 | 1.05 V @ 3 A | 5 µA @ 800 V | 2.8 A | Single Phase | 800 V | |||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division GBU4A-M3/51 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tray | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU4 | Standard | GBU | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 250 | 1 V @ 4 A | 5 µA @ 50 V | 3 A | Single Phase | 50 V | |||||||||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIZ340DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | PowerPAIR®, TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | SIZ340 | MOSFET (Metal Oxide) | 16.7W, 31W | 8-Power33 (3x3) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Half Bridge) | 30V | 30A, 40A | 9.5mOhm @ 15.6A, 10V | 2.4V @ 250µA | 19nC @ 10V | 760pF @ 15V | - | ||||||||||||||||||||||||||||||||||||||
| NXP USA Inc. AFT09H310-03SR6 | NXP USA Inc. |
Min: 1 Mult: 1 |
/image/NXP USA Inc. | - | Tape & Reel (TR) | Obsolete | 70 V | Chassis Mount | NI-1230S | AFT09 | 920MHz | LDMOS | NI-1230S | ROHS3 Compliant | Not Applicable | REACH Unaffected | 935324687128 | EAR99 | 8541.29.0075 | 150 | - | 680 mA | 56W | 17.9dB | - | 28 V | |||||||||||||||||||||||||||||||||||||||
| NXP USA Inc. AFT18H356-24SR6 | NXP USA Inc. |
Min: 1 Mult: 1 |
/image/NXP USA Inc. | - | Tape & Reel (TR) | Obsolete | 65 V | Chassis Mount | NI-1230-4LS2L | AFT18 | 1.88GHz | - | NI-1230-4LS2L | ROHS3 Compliant | Not Applicable | REACH Unaffected | 935311199128 | EAR99 | 8541.29.0075 | 150 | - | - | 1.1 A | 63W | 15dB | - | 28 V | ||||||||||||||||||||||||||||||||||||||
| Infineon Technologies IPP65R225C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | CoolMOS™ C7 | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | IPP65R225 | MOSFET (Metal Oxide) | PG-TO220-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 11A (Tc) | 10V | 225mOhm @ 4.8A, 10V | 4V @ 240µA | 20 nC @ 10 V | ±20V | 996 pF @ 400 V | - | 63W (Tc) | |||||||||||||||||||||||||||||||||||
| NXP USA Inc. AFT27S006NT1 | NXP USA Inc. |
Min: 1 Mult: 1 |
/image/NXP USA Inc. | - | Tape & Reel (TR) | Active | 65 V | Surface Mount | PLD-1.5W | AFT27 | 2.17GHz | LDMOS | PLD-1.5W | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 5A991G | 8541.29.0095 | 1,000 | - | 70 mA | 28.8dBm | 22dB | - | 28 V | |||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division V4PAL45HM3/I | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101, TMBS® | Tape & Reel (TR) | Obsolete | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | V4PAL45 | Schottky | DO-221BC (SMPA) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 14,000 | Fast Recovery =< 500ns, > 200mA (Io) | 45 V | 430 mV @ 2 A | 450 µA @ 45 V | -40°C ~ 150°C | 3A | 450pF @ 4V, 1MHz | ||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division V8PAL50-M3/I | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | TMBS® | Tape & Reel (TR) | Active | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | V8PAL50 | Schottky | DO-221BC (SMPA) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 14,000 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | 430 mV @ 4 A | 400 µA @ 50 V | -40°C ~ 150°C | 4A | 1400pF @ 4V, 1MHz | ||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division BZG03C68TR | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | BZG03C | Tape & Reel (TR) | Obsolete | - | 150°C | Surface Mount | DO-214AC, SMA | BZG03 | 1.25 W | DO-214AC (SMA) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0050 | 1,500 | 1.2 V @ 500 mA | 1 µA @ 51 V | 68 V | 25 Ohms | |||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division BZG05C4V3TR | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Discontinued at Digi-Key | - | 150°C | Surface Mount | DO-214AC, SMA | BZG05 | 1.25 W | DO-214AC (SMA) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0050 | 1,500 | 1.2 V @ 200 mA | 3 µA @ 1 V | 4.3 V | 13 Ohms | |||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division BZG05C6V8TR | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Discontinued at Digi-Key | - | 150°C | Surface Mount | DO-214AC, SMA | BZG05 | 1.25 W | DO-214AC (SMA) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0050 | 1,500 | 1.2 V @ 200 mA | 1 µA @ 4 V | 6.8 V | 3.5 Ohms | |||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division BZT55C5V6-GS08 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101, BZT55 | Tape & Reel (TR) | Active | - | 175°C | Surface Mount | SOD-80 Variant | BZT55C5V6 | 500 mW | SOD-80 QuadroMELF | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0050 | 2,500 | 1.5 V @ 200 mA | 100 nA @ 1 V | 5.6 V | 40 Ohms | |||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division GLL4744A-E3/96 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Active | ±5% | 150°C | Surface Mount | DO-213AB, MELF | GLL4744 | 1 W | MELF DO-213AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0050 | 1,500 | 1.2 V @ 200 mA | 5 µA @ 11.4 V | 15 V | 14 Ohms | |||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division LS4150GS08 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Active | Surface Mount | SOD-80 Variant | LS4150 | Standard | SOD-80 QuadroMELF | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 2,500 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | 1 V @ 200 mA | 4 ns | 100 nA @ 50 V | 175°C (Max) | 600mA | 2.5pF @ 0V, 1MHz | |||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division MCL103A-TR | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Active | Surface Mount | 2-SMD, No Lead | MCL103 | Schottky | MicroMELF | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0070 | 2,500 | Small Signal =< 200mA (Io), Any Speed | 40 V | 600 mV @ 200 mA | 10 ns | 5 µA @ 10 V | 125°C (Max) | 200mA | 50pF @ 0V, 1MHz | |||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division MMSZ4701-E3-08 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Active | ±5% | -55°C ~ 150°C | Surface Mount | SOD-123 | MMSZ4701 | 500 mW | SOD-123 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0050 | 3,000 | 14 V | ||||||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division TZM5228B-GS08 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | ±5% | 175°C | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | TZM5228 | 500 mW | SOD-80 MiniMELF | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0050 | 2,500 | 1.1 V @ 200 mA | 10 µA @ 1 V | 3.9 V | 23 Ohms | |||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division TZM5229B-GS08 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | ±5% | 175°C | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | TZM5229 | 500 mW | SOD-80 MiniMELF | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0050 | 2,500 | 1.1 V @ 200 mA | 5 µA @ 1 V | 4.3 V | 22 Ohms | |||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division TZM5253B-GS08 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | ±5% | 175°C | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | TZM5253 | 500 mW | SOD-80 MiniMELF | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0050 | 2,500 | 1.1 V @ 200 mA | 100 nA @ 19 V | 25 V | 35 Ohms |
