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Discrete Semiconductor Products(28073)
| Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Frequency | Technology | Power - Max | Input | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Current Rating (Amps) | Test Condition | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Voltage - Test | NTC Thermistor | Input Capacitance (Cies) @ Vce |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay General Semiconductor - Diodes Division MBRF20H100CTGHE3/4 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tube | Obsolete | Through Hole | TO-220-3 Full Pack, Isolated Tab | MBRF20 | Schottky | ITO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 100 V | 10A | 770 mV @ 10 A | 4.5 µA @ 100 V | -65°C ~ 175°C | ||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division SB050-E3/73 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Box (TB) | Obsolete | Through Hole | DO-201AD, Axial | SB050 | Schottky | DO-201AD | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1,000 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | 700 mV @ 600 mA | 5 mA @ 50 V | -65°C ~ 150°C | 600mA | - | |||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division V12P12-5300M3/86A | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | eSMP®, TMBS® | Tape & Reel (TR) | Obsolete | Surface Mount | TO-277, 3-PowerDFN | V12P12 | Schottky | TO-277A (SMPC) | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1,500 | Fast Recovery =< 500ns, > 200mA (Io) | 120 V | 800 mV @ 12 A | 500 µA @ 120 V | -40°C ~ 150°C | 12A | - | ||||||||||||||||||||||||||||||||||||||||||
| IXYS IXTT12N150HV | IXYS |
Min: 1 Mult: 1 |
/image/IXYS | - | Tube | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | IXTT12 | MOSFET (Metal Oxide) | TO-268AA | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | -IXTT12N150HV | EAR99 | 8541.29.0095 | 30 | N-Channel | 1500 V | 12A (Tc) | 10V | 4.5V @ 250µA | 106 nC @ 10 V | ±30V | 3720 pF @ 25 V | - | 890W (Tc) | |||||||||||||||||||||||||||||||||||
|
Infineon Technologies BSM50GB170DN2HOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Tray | Obsolete | 150°C (TJ) | Chassis Mount | Module | BSM50G | 500 W | Standard | Module | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 10 | Half Bridge | - | 1700 V | 72 A | 3.9V @ 15V, 50A | No | 8 nF @ 25 V | ||||||||||||||||||||||||||||||||||||||
| Vishay Siliconix 2N6660JAN02 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Bulk | Obsolete | - | - | 2N6660 | - | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | OBSOLETE | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies 64-2116PBF | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | * | Tube | Active | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | SP001562776 | EAR99 | 8541.29.0095 | 50 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-8EWS10S-M3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8EWS10 | Standard | D-PAK (TO-252AA) | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 3,000 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | 1.1 V @ 8 A | 50 µA @ 1000 V | -55°C ~ 150°C | 8A | - | |||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-8EWS10STR-M3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8EWS10 | Standard | D-PAK (TO-252AA) | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 2,000 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | 1.1 V @ 8 A | 50 µA @ 1000 V | -55°C ~ 150°C | 8A | - | |||||||||||||||||||||||||||||||||||||||||
| Texas Instruments CSD17581Q5A | Texas Instruments |
Min: 1 Mult: 1 |
/image/Texas Instruments | NexFET™ | Tape & Reel (TR) | Active | -55°C ~ 155°C (TJ) | Surface Mount | 8-PowerTDFN | CSD17581 | MOSFET (Metal Oxide) | 8-VSONP (5x6) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 24A (Ta), 123A (Tc) | 4.5V, 10V | 3.4mOhm @ 16A, 10V | 1.7V @ 250µA | 54 nC @ 10 V | ±20V | 3640 pF @ 15 V | - | 3.1W (Ta), 83W (Tc) | |||||||||||||||||||||||||||||||||||
| Texas Instruments CSD18542KCS | Texas Instruments |
Min: 1 Mult: 1 |
/image/Texas Instruments | NexFET™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | CSD18542 | MOSFET (Metal Oxide) | TO-220-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 200A (Ta) | 4.5V, 10V | 44mOhm @ 100A, 10V | 2.2V @ 250µA | 57 nC @ 10 V | ±20V | 5070 pF @ 30 V | - | 200W (Tc) | |||||||||||||||||||||||||||||||||||
| Vishay Siliconix SUM50020EL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SUM50020 | MOSFET (Metal Oxide) | TO-263 (D²Pak) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 800 | N-Channel | 60 V | 120A (Tc) | 4.5V, 10V | 2.1mOhm @ 30A, 10V | 2.5V @ 250µA | 126 nC @ 10 V | ±20V | 11113 pF @ 30 V | - | 375W (Tc) | ||||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIHG21N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | SIHG21 | MOSFET (Metal Oxide) | TO-247AC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 650 V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 106 nC @ 10 V | ±30V | 2322 pF @ 100 V | - | 208W (Tc) | ||||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIHG33N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | SIHG33 | MOSFET (Metal Oxide) | TO-247AC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 650 V | 31.6A (Tc) | 10V | 109mOhm @ 16.5A, 10V | 4V @ 250µA | 171 nC @ 10 V | ±30V | 4026 pF @ 100 V | - | 313W (Tc) | ||||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIHH21N65EF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | SIHH21 | MOSFET (Metal Oxide) | PowerPAK® 8 x 8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 650 V | 19.8A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 102 nC @ 10 V | ±30V | 2396 pF @ 100 V | - | 156W (Tc) | ||||||||||||||||||||||||||||||||||||
| Texas Instruments CSD19505KTTT | Texas Instruments |
Min: 1 Mult: 1 |
/image/Texas Instruments | NexFET™ | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | CSD19505 | MOSFET (Metal Oxide) | DDPAK/TO-263-3 | download | ROHS3 Compliant | 2 (1 Year) | REACH Affected | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 200A (Ta) | 6V, 10V | 3.1mOhm @ 100A, 10V | 3.2V @ 250µA | 76 nC @ 10 V | ±20V | 7920 pF @ 40 V | - | 300W (Tc) | |||||||||||||||||||||||||||||||||||
|
Infineon Technologies IRG7CH42UED | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Bulk | Obsolete | IRG7CH | download | Not Applicable | REACH Unaffected | OBSOLETE | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies IRG7CH73UED-R | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Bulk | Obsolete | IRG7CH | download | Not Applicable | REACH Unaffected | OBSOLETE | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies IRG7PK42UD1-EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Tube | Obsolete | IRG7PK | download | Not Applicable | REACH Unaffected | SP001540690 | OBSOLETE | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies IRG8CH106K10F | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Bulk | Obsolete | -40°C ~ 175°C (TJ) | Surface Mount | Die | IRG8CH | Standard | Die | download | Not Applicable | REACH Unaffected | SP001537432 | OBSOLETE | 0000.00.0000 | 1 | 600V, 110A, 1Ohm, 15V | - | 1200 V | 2V @ 15V, 110A | - | 700 nC | 80ns/380ns | ||||||||||||||||||||||||||||||||||||||
| Micro Commercial Co SS36HE-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
/image/Micro Commercial Co | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOD-123H | SS36 | Schottky | SOD-123HE | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 500 mV @ 3 A | 500 µA @ 60 V | -55°C ~ 150°C | 3A | - | |||||||||||||||||||||||||||||||||||||||||
|
MACOM Technology Solutions MAGX-001090-600L0S | MACOM Technology Solutions |
Min: 1 Mult: 1 |
/image/MACOM Technology Solutions | - | Bulk | Obsolete | 65 V | - | 1.03GHz ~ 1.09GHz | HEMT | - | download | 1 (Unlimited) | OBSOLETE | 0000.00.0000 | 10 | 80A | 600 mA | 550W | 21.4dB | - | 50 V | ||||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division SS1FL3-M3/H | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | eSMP® | Tape & Reel (TR) | Active | Surface Mount | DO-219AB | SS1FL3 | Schottky | DO-219AB (SMF) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 480 mV @ 1 A | 200 µA @ 30 V | -55°C ~ 150°C | 1A | 130pF @ 4V, 1MHz | ||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division SS1FL3-M3/I | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | eSMP® | Tape & Reel (TR) | Active | Surface Mount | DO-219AB | SS1FL3 | Schottky | DO-219AB (SMF) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 10,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 480 mV @ 1 A | 200 µA @ 30 V | -55°C ~ 150°C | 1A | 130pF @ 4V, 1MHz | ||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division SS1FL4-M3/H | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | eSMP® | Tape & Reel (TR) | Active | Surface Mount | DO-219AB | SS1FL4 | Schottky | DO-219AB (SMF) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 500 mV @ 1 A | 200 µA @ 40 V | -55°C ~ 150°C | 1A | 115pF @ 4V, 1MHz | ||||||||||||||||||||||||||||||||||||||||
| Texas Instruments CSD23280F3 | Texas Instruments |
Min: 1 Mult: 1 |
/image/Texas Instruments | FemtoFET™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | CSD23280 | MOSFET (Metal Oxide) | 3-PICOSTAR | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 12 V | 1.8A (Ta) | 1.5V, 4.5V | 116mOhm @ 400mA, 4.5V | 950mV @ 250µA | 1.23 nC @ 4.5 V | -6V | 234 pF @ 6 V | - | 500mW (Ta) | |||||||||||||||||||||||||||||||||||
| Infineon Technologies IPA80R650CEXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | CoolMOS™ | Tube | Active | -40°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | IPA80R650 | MOSFET (Metal Oxide) | TO-220-3F | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 8A (Ta) | 10V | 650mOhm @ 5.1A, 10V | 3.9V @ 470µA | 45 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 33W (Tc) | |||||||||||||||||||||||||||||||||||
| onsemi FGH40N60SFDTU-F085 | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | Automotive, AEC-Q101 | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | FGH40 | Standard | 290 W | TO-247-3 | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 450 | 400V, 40A, 10Ohm, 15V | 68 ns | Field Stop | 600 V | 80 A | 120 A | 2.9V @ 15V, 40A | 1.23mJ (on), 380µJ (off) | 121 nC | 21ns/138ns | ||||||||||||||||||||||||||||||||||||
| Infineon Technologies IPU60R600C6AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | CoolMOS™ C6 | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPU60R | MOSFET (Metal Oxide) | PG-TO251-3 | download | 1 (Unlimited) | REACH Unaffected | SP001292878 | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 63W (Tc) | |||||||||||||||||||||||||||||||||||
| Infineon Technologies IPB80N06S2L07ATMA3 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | OptiMOS™ | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IPB80N | MOSFET (Metal Oxide) | PG-TO263-3-2 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 55 V | 80A (Tc) | 4.5V, 10V | 6.7mOhm @ 60A, 10V | 2V @ 150µA | 130 nC @ 10 V | ±20V | 3160 pF @ 25 V | - | 210W (Tc) |
