Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Technology | Voltage - Supply | Supplier Device Package | DataSheet | Other Names | ECCN | Standard Package | Clock Frequency | Memory Type | Memory Size | Access Time | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page |
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Micron Technology Inc. 29F512G08EBLEEJ4-T:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 0°C ~ 70°C | Surface Mount | 132-VBGA | FLASH - NAND (TLC) | 2.6V ~ 3.6V | 132-VBGA (12x18) | 557-MT29F512G08EBLEEJ4-T:ETR | 2,000 | Non-Volatile | 512Gbit | FLASH | 64G x 8 | Parallel | - | |||||
Micron Technology Inc. 62F1G64D4EK-023 WT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -25°C ~ 85°C | Surface Mount | 441-TFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 441-TFBGA (14x14) | 557-MT62F1G64D4EK-023WT:C | 1 | 2.133 GHz | Volatile | 64Gbit | DRAM | 1G x 64 | Parallel | - | ||||
Micron Technology Inc. 29F2T08EMLCEJ4-QJ:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F2T08EMLCEJ4-QJ:C | 1 | |||||||||||||||||
Micron Technology Inc. 62F2G64D8EK-023 FAAT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT62F2G64D8EK-023FAAT:BTR | 2,000 | |||||||||||||||||
Micron Technology Inc. 61K512M32KPA-21:U TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 0°C ~ 95°C (TC) | Surface Mount | 180-TFBGA | SGRAM - GDDR6 | 1.3095V ~ 1.3905V | 180-FBGA (12x14) | 557-MT61K512M32KPA-21:UTR | 2,000 | 10.5 GHz | Volatile | 16Gbit | DRAM | 512M x 32 | POD_135 | - | ||||
Micron Technology Inc. 62F1G64D8EK-031 AAT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 105°C | Surface Mount | 441-TFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 441-TFBGA (14x14) | 557-MT62F1G64D8EK-031AAT:B | 1 | 3.2 GHz | Volatile | 64Gbit | DRAM | 1G x 64 | Parallel | - | ||||
Micron Technology Inc. FC16GAPALGT-S1 IT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -40°C ~ 85°C (TA) | - | - | FLASH - NAND (SLC) | 2.7V ~ 3.6V | - | 557-MTFC16GAPALGT-S1ITTR | 2,000 | 200 MHz | Non-Volatile | 128Gbit | FLASH | 16G x 8 | eMMC_5.1 | - | ||||
Micron Technology Inc. 40A2G8JE-062E AIT:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | SDRAM - DDR4 | 1.14V ~ 1.26V | 78-FBGA (9x11) | download | 557-MT40A2G8JE-062EAIT:ETR | 2,000 | 1.6 GHz | Volatile | 16Gbit | 19 ns | DRAM | 2G x 8 | POD | 15ns | ||
Micron Technology Inc. FC64GASAONS-AIT | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q104 | Box | Active | -40°C ~ 95°C (TC) | Surface Mount | 153-TFBGA | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 153-TFBGA (11.5x13) | 557-MTFC64GASAONS-AIT | 1 | 52 MHz | Non-Volatile | 512Gbit | FLASH | 64G x 8 | UFS2.1 | - | ||||
Micron Technology Inc. 40A2G8VA-062E IT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Obsolete | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | SDRAM - DDR4 | 1.14V ~ 1.26V | 78-FBGA (10x11) | 557-MT40A2G8VA-062EIT:BTR | OBSOLETE | 3,000 | 1.6 GHz | Volatile | 16Gbit | 19 ns | DRAM | 2G x 8 | POD | 15ns | ||
Micron Technology Inc. 29F512G08EBLEEJ4-QJ:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F512G08EBLEEJ4-QJ:ETR | 2,000 | |||||||||||||||||
Micron Technology Inc. 53E768M64D4HJ-046 AAT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 105°C (TC) | Surface Mount | 556-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 556-WFBGA (12.4x12.4) | 557-MT53E768M64D4HJ-046AAT:B | 1 | 2.133 GHz | Volatile | 48Gbit | 3.5 ns | DRAM | 768M x 64 | Parallel | 18ns | |||
Micron Technology Inc. 53E2G32D4DE-046 AAT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | download | 557-MT53E2G32D4DE-046AAT:ATR | 2,000 | 2.133 GHz | Volatile | 64Gbit | 3.5 ns | DRAM | 2G x 32 | Parallel | 18ns | ||
Micron Technology Inc. 53E2G64D8TN-046 AUT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 125°C (TC) | Surface Mount | 556-LFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 556-LFBGA (12.4x12.4) | download | 557-MT53E2G64D8TN-046AUT:C | 1 | 2.133 GHz | Volatile | 128Gbit | 3.5 ns | DRAM | 2G x 64 | Parallel | 18ns | ||
Micron Technology Inc. 29F16T08GWLCEM5:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F16T08GWLCEM5:C | 1 | |||||||||||||||||
Micron Technology Inc. 53E512M64D2HJ-046 AUT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 125°C (TC) | Surface Mount | 556-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 556-WFBGA (12.4x12.4) | 557-MT53E512M64D2HJ-046AUT:BTR | 2,000 | 2.133 GHz | Volatile | 32Gbit | 3.5 ns | DRAM | 512M x 64 | Parallel | 18ns | |||
Micron Technology Inc. 29F4T08EULKEM4-ITF:K TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F4T08EULKEM4-ITF:KTR | 2,000 | |||||||||||||||||
Micron Technology Inc. 29F1T08EELGEJ4-ITF:G | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F1T08EELGEJ4-ITF:G | 1 | |||||||||||||||||
Micron Technology Inc. 29F8T08ESLCEG4-R:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F8T08ESLCEG4-R:C | 1 | |||||||||||||||||
Micron Technology Inc. 62F2G32D4DS-023 WT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C | Surface Mount | 200-WFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 200-WFBGA (10x14.5) | 557-MT62F2G32D4DS-023WT:BTR | 2,000 | 2.133 GHz | Volatile | 64Gbit | DRAM | 2G x 32 | Parallel | - | ||||
Micron Technology Inc. 62F1536M64D8EK-026 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -25°C ~ 85°C | Surface Mount | 441-TFBGA | SDRAM - Mobile LPDDR5 | - | 441-TFBGA (14x14) | 557-MT62F1536M64D8EK-026WT:B | 1 | 3.2 GHz | Volatile | 96Gbit | DRAM | 1.5G x 64 | - | - | ||||
Micron Technology Inc. 29F1T08EELEEJ4-T:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 0°C ~ 70°C | Surface Mount | 132-VBGA | FLASH - NAND (TLC) | 2.6V ~ 3.6V | 132-VBGA (12x18) | 557-MT29F1T08EELEEJ4-T:ETR | 2,000 | Non-Volatile | 1Tbit | FLASH | 128G x 8 | Parallel | - | |||||
Micron Technology Inc. 61M256M32JE-12 NIT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Obsolete | -40°C ~ 95°C (TC) | Surface Mount | 180-TFBGA | SGRAM - GDDR6 | 1.2125V ~ 1.325V | 180-FBGA (12x14) | download | 557-MT61M256M32JE-12NIT:A | OBSOLETE | 1 | 6 GHz | Volatile | 8Gbit | DRAM | 256M x 32 | POD125 | - | ||
Micron Technology Inc. FC256GAVATTC-AAT | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MTFC256GAVATTC-AAT | 1 | |||||||||||||||||
Micron Technology Inc. 62F2G32D4DS-026 AAT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | - | Surface Mount | 200-WFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 200-WFBGA (10x14.5) | 557-MT62F2G32D4DS-026AAT:B | 1 | Volatile | 64Gbit | DRAM | 2G x 32 | Parallel | - | |||||
Micron Technology Inc. 53E512M32D1ZW-046 AAT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | 557-MT53E512M32D1ZW-046AAT:BTR | 2,000 | 2.133 GHz | Volatile | 16Gbit | 3.5 ns | DRAM | 512M x 32 | Parallel | 18ns | |||
Micron Technology Inc. 53E1G32D2FW-046 AAT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | download | 557-MT53E1G32D2FW-046AAT:BTR | 2,000 | 2.133 GHz | Volatile | 32Gbit | 3.5 ns | DRAM | 1G x 32 | Parallel | 18ns | ||
Micron Technology Inc. 62F1G64D4EK-026 WT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT62F1G64D4EK-026WT:CTR | 2,000 | |||||||||||||||||
Micron Technology Inc. 29GZ5A5BPGGA-046AIT.87J | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 85°C (TA) | Surface Mount | 149-WFBGA | FLASH - NAND (SLC), DRAM - LPDDR4 | 1.06V ~ 1.17V, 1.7V ~ 1.95V | 149-WFBGA (8x9.5) | 557-MT29GZ5A5BPGGA-046AIT.87J | 1 | Non-Volatile, Volatile | 4Gbit | 25 ns | FLASH, RAM | 512M x 8 | ONFI | 30ns | ||||
Micron Technology Inc. FC256GAXAUEA-WT | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -25°C ~ 85°C | Surface Mount | 153-WFBGA | FLASH - NAND (SLC) | - | 153-WFBGA (11.5x13) | 557-MTFC256GAXAUEA-WT | 1 | Non-Volatile | 2Tbit | FLASH | 256G x 8 | UFS | - |
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