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ALLCHIPS ELECTRONICS LIMITED

Alliance Memory, Inc. AS4C32M8D1-5TIN

AS4C32M8D1-5TIN


  • Manufacturer: Alliance Memory, Inc.
  • Origchip NO: AS4C32M8D1-5TIN
  • Package: 66-TSSOP (0.400", 10.16mm Width)
  • Datasheet: pdfPDF
  • Stock: 8826
  • Description: AS4C32M8D1-5TIN(Kg)

Quantity:

In Stock

Please send RFQ , we will respond immediately.

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RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.

SPECIFICATIONS

Parameters
Mfr Alliance Memory, Inc.
Series -
Package Tray
Product Status Obsolete
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR
Memory Size 256Mbit
Memory Organization 32M x 8
Memory Interface Parallel
Clock Frequency 200 MHz
Write Cycle Time - Word, Page 15ns
Access Time 700 ps
Voltage - Supply 2.3V ~ 2.7V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package 66-TSOP II
Base Product Number AS4C32
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0024
Other Names 1450-1326
Standard Package 108
SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 66-TSOP II

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