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ALLCHIPS ELECTRONICS LIMITED

Renesas Electronics America Inc RJK03M8DNS-00#J5

RJK03M8DNS-00#J5


  • Manufacturer: Renesas Electronics America Inc
  • Origchip NO: RJK03M8DNS-00#J5
  • Package: 8-PowerWDFN
  • Datasheet: pdfPDF
  • Stock: 315
  • Description: RJK03M8DNS-00#J5(Kg)

Quantity:

Qty

Unit Price

Ext Price

  • 568

    $0.53

    $301.04

Not the price you want? Send RFQ Now and we'll contact you ASAP.

In Stock

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Purchase & Inquiry

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Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.

SPECIFICATIONS

Parameters
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HWSON (3.3x3.3)
Package / Case 8-PowerWDFN
RoHS Status ROHS3 Compliant
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 5,000
Mfr Renesas Electronics America Inc
Series -
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta)
Rds On (Max) @ Id, Vgs 5.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 14.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds 2590 pF @ 10 V
FET Feature -
Power Dissipation (Max) 20W (Tc)
N-Channel 30 V 30A (Ta) 20W (Tc) Surface Mount 8-HWSON (3.3x3.3)

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