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Toshiba Semiconductor and Storage TPN4R712MD,L1Q
TPN4R712MD,L1Q
- Manufacturer: Toshiba Semiconductor and Storage
- Origchip NO: TPN4R712MD,L1Q
- Package: 8-PowerVDFN
- Datasheet:
PDF - Stock: 4
- Description: TPN4R712MD,L1Q(Kg)
Quantity:
Qty
Unit Price
Ext Price
-
10
$0.75
$7.45
-
100
$0.57
$57.11
-
500
$0.45
$225.75
-
1000
$0.36
$361.20
-
2000
$0.33
$654.60
-
5000
$0.30
$1,524.00
-
10000
$0.29
$2,935.00
-
25000
$0.29
$7,150.00
Not the price you want? Send RFQ Now and we'll contact you ASAP.
In Stock
Please send RFQ , we will respond immediately.
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prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.| Parameters | |
|---|---|
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 18A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Package / Case | 8-PowerVDFN |
| Base Product Number | TPN4R712 |
| RoHS Status | RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 5,000 |
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVI |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
P-Channel 20 V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
