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| Compare | Image | Name | Manufacturer | Quantity | Weight(Kg) | Size(LxWxH) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Voltage - Supply | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Clock Frequency | Memory Type | Memory Size | Access Time | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Micron Technology Inc. 29F2G08ABAGAWP-AAT:G TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | MT29F2G08 | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 48-TSOP I | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT29F2G08ABAGAWP-AAT:GTR | 8542.32.0071 | 1,000 | Non-Volatile | 2Gbit | 20 ns | FLASH | 256M x 8 | Parallel | 20ns | |||||||
| Micron Technology Inc. 53E2G32D4DT-046 WT ES:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -30°C ~ 85°C (TC) | MT53E2G32 | SDRAM - Mobile LPDDR4 | 1.1V | REACH Unaffected | 557-MT53E2G32D4DT-046WTES:ATR | 2,000 | 2.133 GHz | Volatile | 64Gbit | DRAM | 2G x 32 | - | - | |||||||||||||
 |
Micron Technology Inc. 40A2G16SKL-062E:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | TwinDie™ | Tray | Obsolete | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | MT40A2G16 | SDRAM - DDR4 | 1.14V ~ 1.26V | 96-FBGA (10.5x13) | download | ROHS3 Compliant | REACH Unaffected | 557-MT40A2G16SKL-062E:B | OBSOLETE | 8542.32.0071 | 190 | 1.6 GHz | Non-Volatile | 32Gbit | 13.75 ns | DRAM | 2G x 16 | Parallel | - | ||||
|
Micron Technology Inc. 62F768M64D4EJ-031 AUT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | MT62F768 | REACH Unaffected | 557-MT62F768M64D4EJ-031AUT:ATR | 1,500 | ||||||||||||||||||||||
| Micron Technology Inc. 29F2T08EMHAFJ4-3ITF:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -40°C ~ 85°C (TA) | Surface Mount | 132-VBGA | MT29F2T08 | FLASH - NAND (TLC) | 2.5V ~ 3.6V | 132-VBGA (12x18) | 3 (168 Hours) | REACH Unaffected | 557-MT29F2T08EMHAFJ4-3ITF:ATR | 8542.32.0071 | 2,000 | 333 MHz | Non-Volatile | 2Tbit | FLASH | 256G x 8 | Parallel | - | ||||||||
| Micron Technology Inc. 53E1G32D2NP-046 WT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -30°C ~ 85°C (TC) | Surface Mount | 200-WFBGA | MT53E1G32 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 557-MT53E1G32D2NP-046WT:A | OBSOLETE | 136 | 2.133 GHz | Volatile | 32Gbit | DRAM | 1G x 32 | - | - | |||||||||
|
Micron Technology Inc. 40A16G4WPF-062H:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 0°C ~ 95°C (TC) | MT40A16G4 | SDRAM - DDR4 | - | 3 (168 Hours) | REACH Unaffected | 557-MT40A16G4WPF-062H:BTR | 8542.32.0071 | 3,000 | 1.6 GHz | Volatile | 64Gbit | DRAM | 16G x 4 | - | - | ||||||||||
| Micron Technology Inc. 29F4T08GMLBEJ4:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Obsolete | 0°C ~ 70°C (TA) | Surface Mount | 132-VBGA | MT29F4T08 | FLASH - NAND | 2.5V ~ 3.6V | 132-VBGA (12x18) | 3 (168 Hours) | REACH Unaffected | 557-MT29F4T08GMLBEJ4:BTR | OBSOLETE | 2,000 | Non-Volatile | 4Tbit | FLASH | 512G x 8 | Parallel | - | |||||||||
|
Micron Technology Inc. FC32GAPALGT-AIT | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Last Time Buy | -40°C ~ 85°C (TA) | MTFC32G | FLASH - NAND | - | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MTFC32GAPALGT-AIT | 8542.32.0071 | 1,520 | Non-Volatile | 256Gbit | FLASH | 32G x 8 | MMC | - | ||||||||||
|
Micron Technology Inc. 40A512M16LY-062E AT:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Obsolete | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | MT40A512M16 | SDRAM - DDR4 | - | 96-FBGA (7.5x13.5) | 557-MT40A512M16LY-062EAT:ETR | OBSOLETE | 8542.32.0071 | 2,000 | 1.6 GHz | Non-Volatile | 8Gbit | DRAM | 512M x 16 | - | - | ||||||||
|
Micron Technology Inc. 53E4D1BSQ-DC TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | MT53E4 | REACH Unaffected | 557-MT53E4D1BSQ-DCTR | 2,000 | ||||||||||||||||||||||
| Micron Technology Inc. 29F1G08ABAFAWP-AAT:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 105°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | MT29F1G08 | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 48-TSOP I | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT29F1G08ABAFAWP-AAT:F | 8542.32.0071 | 96 | Non-Volatile | 1Gbit | 20 ns | FLASH | 128M x 8 | Parallel | 20ns | |||||||
|
Micron Technology Inc. 53E1DBDS-DC TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | MT53E1 | REACH Unaffected | 557-MT53E1DBDS-DCTR | 2,000 | ||||||||||||||||||||||
|
Micron Technology Inc. 53E384M64D4NK-046 WT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -30°C ~ 85°C (TC) | MT53E384 | SDRAM - Mobile LPDDR4 | 1.1V | REACH Unaffected | 557-MT53E384M64D4NK-046WT:E | OBSOLETE | 119 | 2.133 GHz | Volatile | 24Gbit | DRAM | 384M x 64 | - | - | |||||||||||
|
Micron Technology Inc. 53E4D1BHJ-DC TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | MT53E4 | REACH Unaffected | 557-MT53E4D1BHJ-DCTR | 2,000 | ||||||||||||||||||||||
|
Micron Technology Inc. 29F4T08EULCEM4-R:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Obsolete | 0°C ~ 70°C (TA) | - | - | MT29F4T08 | FLASH - NAND (TLC) | 2.7V ~ 3.6V | - | 557-MT29F4T08EULCEM4-R:C | OBSOLETE | 8542.32.0071 | 1,120 | Non-Volatile | 4Tbit | FLASH | 512G x 8 | Parallel | - | |||||||||
|
Micron Technology Inc. FC8GAMALGT-AIT | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -40°C ~ 85°C (TA) | MTFC8 | FLASH - NAND | - | ROHS3 Compliant | REACH Unaffected | 557-MTFC8GAMALGT-AIT | OBSOLETE | 8542.32.0071 | 152 | Non-Volatile | 64Gbit | FLASH | 8G x 8 | MMC | - | ||||||||||
|
Micron Technology Inc. 53E4D1ADE-DC TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | MT53E4 | REACH Unaffected | 557-MT53E4D1ADE-DCTR | 2,000 | ||||||||||||||||||||||
|
Micron Technology Inc. 40A512M16LY-062E AT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Obsolete | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | MT40A512M16 | SDRAM - DDR4 | - | 96-FBGA (7.5x13.5) | 557-MT40A512M16LY-062EAT:E | OBSOLETE | 8542.32.0071 | 180 | 1.6 GHz | Non-Volatile | 8Gbit | DRAM | 512M x 16 | - | - | ||||||||
| Micron Technology Inc. 29F1G08ABBFAH4-AAT:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 105°C (TA) | Surface Mount | 63-VFBGA | MT29F1G08 | FLASH - NAND (SLC) | 1.7V ~ 1.95V | 63-VFBGA (9x11) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT29F1G08ABBFAH4-AAT:F | 8542.32.0071 | 210 | Non-Volatile | 1Gbit | 25 ns | FLASH | 128M x 8 | Parallel | 25ns | |||||||
| Micron Technology Inc. 40A8G4BAF-062E:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | TwinDie™ | Tray | Obsolete | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | MT40A8G4 | SDRAM - DDR4 | 1.14V ~ 1.26V | 78-FBGA (10.5x11) | 557-MT40A8G4BAF-062E:B | OBSOLETE | 8542.32.0071 | 168 | 1.6 GHz | Non-Volatile | 32Gbit | 13.75 ns | DRAM | 8G x 4 | Parallel | - | ||||||||
| Micron Technology Inc. 53E512M32D2NP-046 WT:F TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Obsolete | -30°C ~ 85°C (TC) | Surface Mount | 200-WFBGA | MT53E512 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | REACH Unaffected | 557-MT53E512M32D2NP-046WT:FTR | OBSOLETE | 2,000 | 2.133 GHz | Volatile | 16Gbit | DRAM | 512M x 32 | - | - | ||||||||
|
Micron Technology Inc. 53E4DADT-DC TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | MT53E4 | ROHS3 Compliant | REACH Unaffected | 557-MT53E4DADT-DCTR | 2,000 | |||||||||||||||||||||
| Micron Technology Inc. 53E2G32D4DT-046 WT ES:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Active | -30°C ~ 85°C (TC) | MT53E2G32 | SDRAM - Mobile LPDDR4 | 1.1V | REACH Unaffected | 557-MT53E2G32D4DT-046WTES:A | 136 | 2.133 GHz | Volatile | 64Gbit | DRAM | 2G x 32 | - | - | |||||||||||||
|
Micron Technology Inc. 53E4D1ABA-DC TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | MT53E4 | REACH Unaffected | 557-MT53E4D1ABA-DCTR | 2,000 | ||||||||||||||||||||||
| Micron Technology Inc. 29F2G08ABBGAH4-AAT:G TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C (TA) | Surface Mount | 63-VFBGA | MT29F2G08 | FLASH - NAND (SLC) | 1.7V ~ 1.95V | 63-VFBGA (9x11) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT29F2G08ABBGAH4-AAT:GTR | 8542.32.0071 | 2,000 | Non-Volatile | 2Gbit | 30 ns | FLASH | 256M x 8 | Parallel | 30ns | |||||||
| Micron Technology Inc. 29F2T08EMHBFJ4-T:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Obsolete | 0°C ~ 70°C (TA) | Surface Mount | 132-VBGA | MT29F2T08 | FLASH - NAND (TLC) | 1.7V ~ 1.95V | 132-VBGA (12x18) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT29F2T08EMHBFJ4-T:BTR | OBSOLETE | 8542.32.0071 | 1,000 | Non-Volatile | 2Tbit | FLASH | 256G x 8 | Parallel | - | |||||||
|
Micron Technology Inc. 40A8G4VNE-062H:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Active | 0°C ~ 95°C (TC) | MT40A8G4 | SDRAM - DDR4 | 1.14V ~ 1.26V | 3 (168 Hours) | REACH Unaffected | 557-MT40A8G4VNE-062H:B | 8542.32.0071 | 152 | 1.6 GHz | Non-Volatile | 32Gbit | 13.75 ns | DRAM | 8G x 4 | Parallel | - | |||||||||
|
Micron Technology Inc. 29AZ5A5CHGSQ-18AAT.87U | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tube | Active | MT29AZ5 | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT29AZ5A5CHGSQ-18AAT.87U | 1,440 | ||||||||||||||||||||
|
Micron Technology Inc. 29AZ5A5CMGWD-18AIT.87C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tube | Obsolete | MT29AZ5 | ROHS3 Compliant | 3 (168 Hours) | 557-MT29AZ5A5CMGWD-18AIT.87C | OBSOLETE | 1,440 |
