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ALL Products
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Circuit Protection
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Connectors, Interconnects
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RF/IF and RFID
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Sensors, Transducers
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- Color Sensors - Industrial
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- Humidity, Moisture Sensors)
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Switches
- Accessories
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- View More >>
| Compare | Image | Name | Manufacturer | Quantity | Weight(Kg) | Size(LxWxH) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Voltage - Supply | Supplier Device Package | DataSheet | Other Names | Standard Package | Clock Frequency | Memory Type | Memory Size | Access Time | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Micron Technology Inc. 29F4T08EMLCHD4-QA:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F4T08EMLCHD4-QA:CTR | 2,000 | |||||||||||||||||||
|
Micron Technology Inc. 29F1T08EBLCHD4-QA:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F1T08EBLCHD4-QA:C | 1 | |||||||||||||||||||
|
Micron Technology Inc. 41K512M16VRP-107 AAT:P | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | SDRAM - DDR3L | 1.283V ~ 1.45V | 96-FBGA (8x14) | download | 557-MT41K512M16VRP-107AAT:P | 1 | 933 MHz | Volatile | 8Gbit | 20 ns | DRAM | 512M x 16 | Parallel | 15ns | ||||
|
Micron Technology Inc. 60B2G8HS-48B AAT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 105°C | - | - | SDRAM - DDR5 | - | - | 557-MT60B2G8HS-48BAAT:A | 1 | 2.4 GHz | Volatile | 16Gbit | DRAM | 2G x 8 | Parallel | - | ||||||
|
Micron Technology Inc. 29F8T08GULCEM4-QM:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F8T08GULCEM4-QM:C | 1 | |||||||||||||||||||
|
Micron Technology Inc. 29F1T08EELEEJ4-QJ:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F1T08EELEEJ4-QJ:E | 1 | |||||||||||||||||||
|
Micron Technology Inc. 29F4T08EQLEEG8-QD:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F4T08EQLEEG8-QD:ETR | 2,000 | |||||||||||||||||||
|
Micron Technology Inc. 29F2T08EELCHD4-M:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F2T08EELCHD4-M:C | 1 | |||||||||||||||||||
|
Micron Technology Inc. 62F1G32D2DS-023 AIT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | - | Surface Mount | 200-WFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 200-WFBGA (10x14.5) | 557-MT62F1G32D2DS-023AIT:C | 1 | 4.266 GHz | Volatile | 32Gbit | DRAM | 1G x 32 | Parallel | - | ||||||
| Micron Technology Inc. 53E512M32D1ZW-046 AIT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 95°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | 557-MT53E512M32D1ZW-046AIT:B | 1 | 2.133 GHz | Volatile | 16Gbit | 3.5 ns | DRAM | 512M x 32 | Parallel | 18ns | ||||||
| Micron Technology Inc. 53E256M32D2FW-046 AAT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | download | 557-MT53E256M32D2FW-046AAT:BTR | 2,000 | 2.133 GHz | Volatile | 8Gbit | 3.5 ns | DRAM | 256M x 32 | Parallel | 18ns | |||||
|
Micron Technology Inc. 40A1G16TD-062E AUT:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -40°C ~ 125°C (TC) | - | - | SDRAM - DDR4 | 1.14V ~ 1.26V | - | 557-MT40A1G16TD-062EAUT:F | 1 | 1.6 GHz | Volatile | 16Gbit | 19 ns | DRAM | 1G x 16 | POD | 15ns | |||||
|
Micron Technology Inc. 60B1G16HC-48B:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 0°C ~ 95°C (TC) | Surface Mount | 102-VFBGA | SDRAM - DDR5 | - | 102-VFBGA (9x14) | 557-MT60B1G16HC-48B:ATR | 2,000 | 2.4 GHz | Volatile | 16Gbit | 16 ns | DRAM | 1G x 16 | POD | - | |||||
|
Micron Technology Inc. 62F512M64D4EK-031 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -25°C ~ 85°C | Surface Mount | 441-TFBGA | SDRAM - Mobile LPDDR5 | - | 441-TFBGA (14x14) | 557-MT62F512M64D4EK-031WT:B | 1 | 3.2 GHz | Volatile | 32Gbit | DRAM | 512M x 64 | Parallel | - | ||||||
|
Micron Technology Inc. 62F1G32D2DS-023 AAT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | - | Surface Mount | 200-WFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 200-WFBGA (10x14.5) | 557-MT62F1G32D2DS-023AAT:B | 1 | 4.266 GHz | Volatile | 32Gbit | DRAM | 1G x 32 | Parallel | - | ||||||
|
Micron Technology Inc. 53E768M64D4HJ-046 AAT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C (TC) | Surface Mount | 556-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 556-WFBGA (12.4x12.4) | 557-MT53E768M64D4HJ-046AAT:BTR | 2,000 | 2.133 GHz | Volatile | 48Gbit | 3.5 ns | DRAM | 768M x 64 | Parallel | 18ns | |||||
|
Micron Technology Inc. 29F512G08EBLEEJ4-R:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 0°C ~ 70°C | Surface Mount | 132-VBGA | FLASH - NAND (TLC) | 2.6V ~ 3.6V | 132-VBGA (12x18) | 557-MT29F512G08EBLEEJ4-R:ETR | 2,000 | Non-Volatile | 512Gbit | FLASH | 64G x 8 | Parallel | - | |||||||
|
Micron Technology Inc. 53E4G32D8GS-046 WT ES:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C | - | - | SDRAM - Mobile LPDDR4 | - | - | 557-MT53E4G32D8GS-046WTES:CTR | 2,000 | 2.133 GHz | Volatile | 128Gbit | DRAM | 4G x 32 | Parallel | - | ||||||
|
Micron Technology Inc. 62F512M32D2DS-031 AAT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 105°C | Surface Mount | 200-WFBGA | SDRAM - Mobile LPDDR5 | - | 200-WFBGA (10x14.5) | 557-MT62F512M32D2DS-031AAT:B | 1 | 3.2 GHz | Volatile | 16Gbit | DRAM | 512M x 32 | Parallel | - | ||||||
|
Micron Technology Inc. 53E4G32D8CY-046 WT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -25°C ~ 85°C | - | - | SDRAM - Mobile LPDDR4 | - | - | 557-MT53E4G32D8CY-046WT:C | 1 | 2.133 GHz | Volatile | 128Gbit | DRAM | 4G x 32 | Parallel | - | ||||||
|
Micron Technology Inc. 29F4T08EULEEM4-T:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 0°C ~ 70°C | Surface Mount | 132-BGA | FLASH - NAND (TLC) | 2.6V ~ 3.6V | 132-LBGA (12x18) | 557-MT29F4T08EULEEM4-T:E | 1 | Non-Volatile | 4Tbit | FLASH | 512G x 8 | Parallel | - | |||||||
|
Micron Technology Inc. 62F3G32D8DV-023 AUT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 125°C | - | - | SDRAM - Mobile LPDDR5 | - | - | 557-MT62F3G32D8DV-023AUT:B | 1 | 4.266 GHz | Volatile | 96Gbit | DRAM | 3G x 32 | Parallel | - | ||||||
|
Micron Technology Inc. 62F3G32D8DV-023 IT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -40°C ~ 95°C | - | - | SDRAM - Mobile LPDDR5 | - | - | 557-MT62F3G32D8DV-023IT:BTR | 2,000 | 4.266 GHz | Volatile | 96Gbit | DRAM | 3G x 32 | Parallel | - | ||||||
|
Micron Technology Inc. 53E2G64D8TN-046 WT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C (TC) | Surface Mount | 556-LFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 556-LFBGA (12.4x12.4) | 557-MT53E2G64D8TN-046WT:ATR | 2,000 | 2.133 GHz | Volatile | 128Gbit | 3.5 ns | DRAM | 2G x 64 | Parallel | 18ns | |||||
|
Micron Technology Inc. 62F1536M64D8EK-026 WT ES:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -25°C ~ 85°C | Surface Mount | 441-TFBGA | SDRAM - Mobile LPDDR5 | - | 441-TFBGA (14x14) | 557-MT62F1536M64D8EK-026WTES:B | 1 | 3.2 GHz | Volatile | 96Gbit | DRAM | 1.5G x 64 | - | - | ||||||
|
Micron Technology Inc. 29GZ6A6BPIET-53IT.112 TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29GZ6A6BPIET-53IT.112TR | 2,000 | |||||||||||||||||||
| Micron Technology Inc. 53E1G32D2FW-046 IT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -40°C ~ 95°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | 557-MT53E1G32D2FW-046IT:A | 1 | 2.133 GHz | Volatile | 32Gbit | DRAM | 1G x 32 | Parallel | 18ns | |||||||
|
Micron Technology Inc. 62F2G32D4DS-023 AUT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT62F2G32D4DS-023AUT:CTR | 2,000 | |||||||||||||||||||
|
Micron Technology Inc. 62F768M64D4ZU-031 RF WT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | MT62F768 | 557-MT62F768M64D4ZU-031RFWT:BTR | 2,500 | ||||||||||||||||||
|
Micron Technology Inc. 62F2G32D4DS-023 FAAT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | - | Surface Mount | 200-WFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 200-WFBGA (10x14.5) | 557-MT62F2G32D4DS-023FAAT:B | 1 | 4.266 GHz | Volatile | 64Gbit | DRAM | 2G x 32 | Parallel | - |
