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| Compare | Image | Name | Manufacturer | Quantity | Weight(Kg) | Size(LxWxH) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Voltage - Supply | Supplier Device Package | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Clock Frequency | Memory Type | Memory Size | Access Time | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page | Transfer Rate (Mb/s, MT/s, MHz) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
Micron Technology Inc. 40A512M16LY-062E AAT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | MT40A512M16 | SDRAM - DDR4 | 1.14V ~ 1.26V | 96-FBGA (7.5x13.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT40A512M16LY-062EAAT:E | EAR99 | 8542.32.0036 | 1,080 | 1.6 GHz | Volatile | 8Gbit | 19 ns | DRAM | 512M x 16 | Parallel | 15ns | ||||
|
Micron Technology Inc. 40A512M16TB-062E IT:J | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | MT40A512M16 | SDRAM - DDR4 | 1.14V ~ 1.26V | 96-FBGA (7.5x13.5) | ROHS3 Compliant | 3 (168 Hours) | MT40A512M16TB-062EIT:J | EAR99 | 8542.32.0036 | 1,020 | 1.6 GHz | Volatile | 8Gbit | 19 ns | DRAM | 512M x 16 | Parallel | 15ns | |||||
| Micron Technology Inc. 41K512M16VRN-107 AAT:P | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | MT41K512M16 | SDRAM - DDR3L | 1.283V ~ 1.45V | 96-FBGA (8x14) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT41K512M16VRN-107AAT:P | EAR99 | 8542.32.0036 | 1,368 | 933 MHz | Volatile | 8Gbit | 20 ns | DRAM | 512M x 16 | Parallel | 15ns | |||||
| Micron Technology Inc. 41K512M16VRN-107 AIT:P | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | MT41K512M16 | SDRAM - DDR3L | 1.283V ~ 1.45V | 96-FBGA (8x14) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT41K512M16VRN-107AIT:P | EAR99 | 8542.32.0036 | 1,368 | 933 MHz | Volatile | 8Gbit | 20 ns | DRAM | 512M x 16 | Parallel | 15ns | |||||
| Micron Technology Inc. 41K512M16VRN-107 IT:P | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | MT41K512M16 | SDRAM - DDR3L | 1.283V ~ 1.45V | 96-FBGA (8x14) | ROHS3 Compliant | 3 (168 Hours) | MT41K512M16VRN-107IT:P | EAR99 | 8542.32.0036 | 1,368 | 933 MHz | Volatile | 8Gbit | 20 ns | DRAM | 512M x 16 | Parallel | 15ns | ||||||
| Micron Technology Inc. 53D1024M32D4DT-046 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -30°C ~ 85°C (TC) | Surface Mount | 200-VFBGA | MT53D1024 | SDRAM - Mobile LPDDR4 | 1.1V | 200-VFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53D1024M32D4DT-046WT:D | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 32Gbit | DRAM | 1G x 32 | - | - | ||||||
| Micron Technology Inc. 53D512M16D1DS-046 AAT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 105°C (TC) | Surface Mount | 200-WFBGA | MT53D512 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53D512M16D1DS-046AAT:D | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 8Gbit | DRAM | 512M x 16 | - | - | ||||||
| Micron Technology Inc. 53D512M32D2DS-046 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -30°C ~ 85°C (TC) | Surface Mount | 200-WFBGA | MT53D512 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | MT53D512M32D2DS-046WT:D | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 16Gbit | DRAM | 512M x 32 | - | - | |||||||
| Micron Technology Inc. 53D512M32D2DS-053 AUT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Last Time Buy | -40°C ~ 125°C (TC) | Surface Mount | 200-WFBGA | MT53D512 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53D512M32D2DS-053AUT:D | EAR99 | 8542.32.0036 | 1,360 | 1.866 GHz | Volatile | 16Gbit | DRAM | 512M x 32 | - | - | ||||||
|
Micron Technology Inc. 53D768M32D2DS-046 WT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Active | -30°C ~ 85°C (TC) | MT53D768 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53D768M32D2DS-046WT:A | 0000.00.0000 | 1,360 | 2.133 GHz | Volatile | 24Gbit | DRAM | 768M x 32 | - | - | |||||||||
| Micron Technology Inc. 53E128M16D1DS-046 AAT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 105°C (TC) | MT53E128 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E128M16D1DS-046AAT:A | 0000.00.0000 | 1,360 | 2.133 GHz | Volatile | 2Gbit | DRAM | 128M x 16 | - | - | ||||||||||
| Micron Technology Inc. 53E128M16D1DS-053 AIT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Obsolete | -40°C ~ 95°C (TC) | MT53E128 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | MT53E128M16D1DS-053AIT:A | OBSOLETE | 1,360 | 1.866 GHz | Volatile | 2Gbit | DRAM | 128M x 16 | - | - | |||||||||||
| Micron Technology Inc. 53E128M32D2DS-046 AAT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 105°C (TC) | Surface Mount | 200-WFBGA | MT53E128 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E128M32D2DS-046AAT:A | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 4Gbit | DRAM | 128M x 32 | - | - | ||||||
| Micron Technology Inc. 53E128M32D2DS-046 AUT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 125°C (TC) | Surface Mount | 200-WFBGA | MT53E128 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E128M32D2DS-046AUT:A | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 4Gbit | DRAM | 128M x 32 | - | - | ||||||
| Micron Technology Inc. 53E1536M32D4DT-046 AAT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Obsolete | -40°C ~ 105°C (TC) | MT53E1536 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E1536M32D4DT-046AAT:A | OBSOLETE | 0000.00.0000 | 1,360 | 2.133 GHz | Volatile | 48Gbit | DRAM | 1.5G x 32 | - | - | |||||||||
|
Micron Technology Inc. 53E1G64D4SQ-046 AIT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Obsolete | -40°C ~ 95°C (TC) | MT53E1G64 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | MT53E1G64D4SQ-046AIT:A | OBSOLETE | 0000.00.0000 | 1,360 | 2.133 GHz | Volatile | 64Gbit | DRAM | 1G x 64 | - | - | |||||||||
| Micron Technology Inc. 53E256M16D1DS-046 AAT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 105°C (TC) | MT53E256 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E256M16D1DS-046AAT:B | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 4Gbit | DRAM | 256M x 16 | - | - | |||||||||
| Micron Technology Inc. 53E256M32D2DS-046 AAT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 105°C (TC) | Surface Mount | 200-WFBGA | MT53E256 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E256M32D2DS-046AAT:B | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 8Gbit | DRAM | 256M x 32 | - | - | ||||||
| Micron Technology Inc. 53E256M32D2DS-053 AAT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Last Time Buy | -40°C ~ 105°C (TC) | Surface Mount | 200-WFBGA | MT53E256 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E256M32D2DS-053AAT:B | EAR99 | 8542.32.0036 | 1,360 | 1.866 GHz | Volatile | 8Gbit | DRAM | 256M x 32 | - | - | ||||||
| Micron Technology Inc. 53E256M32D2DS-053 AIT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | MT53E256 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E256M32D2DS-053AIT:B | EAR99 | 8542.32.0036 | 1,360 | 1.866 GHz | Volatile | 8Gbit | DRAM | 256M x 32 | - | - | ||||||
| Micron Technology Inc. 53E256M32D2DS-053 AUT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Last Time Buy | -40°C ~ 125°C (TC) | Surface Mount | 200-WFBGA | MT53E256 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E256M32D2DS-053AUT:B | EAR99 | 8542.32.0036 | 1,360 | 1.866 GHz | Volatile | 8Gbit | DRAM | 256M x 32 | - | - | ||||||
|
Micron Technology Inc. 53E256M64D4NZ-053 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -30°C ~ 85°C (TC) | MT53E256 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E256M64D4NZ-053WT:B | EAR99 | 8542.32.0036 | 1,190 | 1.866 GHz | Volatile | 16Gbit | DRAM | 256M x 64 | - | - | ||||||||
| Micron Technology Inc. 53E384M32D2DS-046 AUT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 125°C (TC) | Surface Mount | 200-WFBGA | MT53E384 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E384M32D2DS-046AUT:E | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 12Gbit | DRAM | 384M x 32 | - | - | ||||||
| Micron Technology Inc. 53E384M32D2DS-053 WT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Active | -30°C ~ 85°C (TC) | Surface Mount | 200-WFBGA | MT53E384 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E384M32D2DS-053WT:E | EAR99 | 8542.32.0036 | 1,360 | 1.866 GHz | Volatile | 12Gbit | DRAM | 384M x 32 | - | - | ||||||
| Micron Technology Inc. 53E768M32D4DT-046 AIT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Obsolete | -40°C ~ 95°C (TC) | Surface Mount | 200-VFBGA | MT53E768 | SDRAM - Mobile LPDDR4 | 1.1V | 200-VFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | MT53E768M32D4DT-046AIT:E | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 24Gbit | DRAM | 768M x 32 | - | - | |||||||
| Micron Technology Inc. 53E768M32D4DT-053 WT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -30°C ~ 85°C (TC) | Surface Mount | 200-VFBGA | MT53E768 | SDRAM - Mobile LPDDR4 | 1.1V | 200-VFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E768M32D4DT-053WT:E | EAR99 | 8542.32.0036 | 1,360 | 1.866 GHz | Volatile | 24Gbit | DRAM | 768M x 32 | - | - | ||||||
| Micron Technology Inc. 61K512M32KPA-14:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | 0°C ~ 95°C (TC) | Surface Mount | 180-TFBGA | MT61K512 | SGRAM - GDDR6 | 1.31V ~ 1.391V | 180-FBGA (12x14) | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | 1,260 | 7 GHz | Volatile | 16Gbit | DRAM | 512M x 32 | Parallel | - | ||||||||
|
Micron Technology Inc. MTA4ATF51264HZ-2G6J1 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | 260-SODIMM | MTA4ATF51264 | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8473.30.1140 | 100 | DDR4 SDRAM | 4GB | 2666 | ||||||||||||||||
|
Micron Technology Inc. FC128GAPALNS-IT | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | MTFC128 | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | 1,520 | ||||||||||||||||||||
| Micron Technology Inc. FC16GAPALBH-IT | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | e•MMC™ | Tray | Obsolete | -40°C ~ 85°C (TA) | Surface Mount | 153-TFBGA | MTFC16 | FLASH - NAND | 2.7V ~ 3.6V | 153-TFBGA (11.5x13) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 3A991B1A | 8542.32.0071 | 1,520 | Non-Volatile | 128Gbit | FLASH | 16G x 8 | MMC | - |
