Compare | Image | Name | Manufacturer | Quantity | Weight(Kg) | Size(LxWxH) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Voltage - Supply | Supplier Device Package | DataSheet | Other Names | Standard Package | Clock Frequency | Memory Type | Memory Size | Access Time | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page |
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Micron Technology Inc. 62F1G64D4EK-026 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | - | Surface Mount | 441-TFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 441-TFBGA (14x14) | 557-MT62F1G64D4EK-026WT:B | 1 | 3.2 GHz | Volatile | 64Gbit | DRAM | 1G x 64 | Parallel | - | ||||||
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Micron Technology Inc. 29F4T08EULKEM4-ITF:K | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F4T08EULKEM4-ITF:K | 1 | |||||||||||||||||||
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Micron Technology Inc. 29F4T08EULGEM4-ITF:G TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F4T08EULGEM4-ITF:GTR | 2,000 | |||||||||||||||||||
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Micron Technology Inc. 62F768M64D4EK-023 WT ES:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | MT62F768 | 557-MT62F768M64D4EK-023WTES:B | 1 | ||||||||||||||||||
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Micron Technology Inc. 53E2G64D8TN-046 AIT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 95°C (TC) | Surface Mount | 556-LFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 556-LFBGA (12.4x12.4) | 557-MT53E2G64D8TN-046AIT:ATR | 2,000 | 2.133 GHz | Volatile | 128Gbit | 3.5 ns | DRAM | 2G x 64 | Parallel | 18ns | |||||
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Micron Technology Inc. 53E1536M32D4DE-046 AAT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | 557-MT53E1536M32D4DE-046AAT:BTR | 2,000 | 2.133 GHz | Volatile | 48Gbit | 3.5 ns | DRAM | 1.5G x 32 | Parallel | 18ns | |||||
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Micron Technology Inc. 40A2G8AG-062E AIT:F TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 95°C (TC) | - | - | SDRAM - DDR4 | 1.14V ~ 1.26V | - | 557-MT40A2G8AG-062EAIT:FTR | 2,000 | 1.6 GHz | Volatile | 16Gbit | 19 ns | DRAM | 2G x 8 | Parallel | 15ns | |||||
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Micron Technology Inc. 29F2T08EMLEEJ4-QA:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F2T08EMLEEJ4-QA:ETR | 2,000 | |||||||||||||||||||
Micron Technology Inc. 53E256M32D2FW-046 AUT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Last Time Buy | -40°C ~ 125°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | download | 557-MT53E256M32D2FW-046AUT:B | 1 | 2.133 GHz | Volatile | 8Gbit | 3.5 ns | DRAM | 256M x 32 | Parallel | 18ns | |||||
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Micron Technology Inc. 61K512M32KPA-16:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 0°C ~ 95°C (TC) | Surface Mount | 180-TFBGA | SGRAM - GDDR6 | 1.3095V ~ 1.3905V | 180-FBGA (12x14) | 557-MT61K512M32KPA-16:C | 1 | 8 GHz | Volatile | 16Gbit | DRAM | 512M x 32 | POD_135 | - | ||||||
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Micron Technology Inc. 62F2G64D8EK-026 AIT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 95°C | Surface Mount | 441-TFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 441-TFBGA (14x14) | 557-MT62F2G64D8EK-026AIT:BTR | 2,000 | 3.2 GHz | Volatile | 128Gbit | DRAM | 2G x 64 | Parallel | - | ||||||
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Micron Technology Inc. 62F1G32D2DS-023 WT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -25°C ~ 85°C | Surface Mount | 200-WFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 200-WFBGA (10x14.5) | 557-MT62F1G32D2DS-023WT:C | 1 | 3.2 GHz | Volatile | 32Gbit | DRAM | 1G x 32 | Parallel | - | ||||||
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Micron Technology Inc. 29F4T08GLLCEG7-QB:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F4T08GLLCEG7-QB:CTR | 2,000 | |||||||||||||||||||
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Micron Technology Inc. 53E768M32D2FW-046 AUT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT53E768M32D2FW-046AUT:CTR | 2,000 | |||||||||||||||||||
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Micron Technology Inc. 62F1G32D2DS-023 WT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C | Surface Mount | 200-WFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 200-WFBGA (10x14.5) | 557-MT62F1G32D2DS-023WT:CTR | 2,000 | 3.2 GHz | Volatile | 32Gbit | DRAM | 1G x 32 | Parallel | - | ||||||
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Micron Technology Inc. 29GZ6A6BPIET-53AIT.112 TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 85°C (TA) | Surface Mount | 149-VFBGA | FLASH - NAND (SLC), DRAM - LPDDR4 | 1.06V ~ 1.17V, 1.7V ~ 1.95V | 149-VFBGA (8x9.5) | 557-MT29GZ6A6BPIET-53AIT.112TR | 2,000 | Non-Volatile, Volatile | 8Gbit | 25 ns | FLASH, RAM | 1G x 8 | ONFI | 30ns | ||||||
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Micron Technology Inc. 62F1G64D4EK-023 WT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C | Surface Mount | 441-TFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 441-TFBGA (14x14) | 557-MT62F1G64D4EK-023WT:CTR | 2,000 | 2.133 GHz | Volatile | 64Gbit | DRAM | 1G x 64 | Parallel | - | ||||||
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Micron Technology Inc. 53E1536M64D8HJ-046 WT ES:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C | Surface Mount | 556-TFBGA | SDRAM - Mobile LPDDR4 | - | 556-WFBGA (12.4x12.4) | 557-MT53E1536M64D8HJ-046WTES:CTR | 2,000 | 2.133 GHz | Volatile | 96Gbit | DRAM | 1.5M x 64 | - | - | ||||||
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Micron Technology Inc. FC128GAXATEA-WT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C | Surface Mount | 153-VFBGA | FLASH - NAND (SLC) | - | 153-VFBGA (11.5x13) | 557-MTFC128GAXATEA-WTTR | 2,000 | Non-Volatile | 1Tbit | FLASH | 128G x 8 | UFS 3.1 | - | |||||||
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Micron Technology Inc. 29F8T08EWLEEM5-T:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 0°C ~ 70°C | - | - | FLASH - NAND (TLC) | - | - | 557-MT29F8T08EWLEEM5-T:E | 1 | Non-Volatile | 8Tbit | FLASH | 1T x 8 | Parallel | - | |||||||
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Micron Technology Inc. 62F1536M64D8EK-023 FAAT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C | Surface Mount | 441-TFBGA | SDRAM - Mobile LPDDR5 | - | 441-TFBGA (14x14) | 557-MT62F1536M64D8EK-023FAAT:BTR | 1,500 | 4.266 GHz | Volatile | 96Gbit | DRAM | 1.5G x 64 | Parallel | - | ||||||
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Micron Technology Inc. 60B4G4HB-48B:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 0°C ~ 95°C | Surface Mount | 82-VFBGA | SDRAM - DDR5 | - | 82-VFBGA (9x11) | 557-MT60B4G4HB-48B:A | 1 | 2.4 GHz | Volatile | 16Gbit | DRAM | 4G x 4 | Parallel | - | ||||||
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Micron Technology Inc. 62F4G32D8DV-026 AAT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C | - | - | SDRAM - Mobile LPDDR5 | - | - | 557-MT62F4G32D8DV-026AAT:BTR | 2,000 | 3.2 GHz | Volatile | 128Gbit | DRAM | 4G x 32 | Parallel | - | ||||||
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Micron Technology Inc. 40A2G8AG-062E AIT:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 95°C (TC) | - | - | SDRAM - DDR4 | 1.14V ~ 1.26V | - | 557-MT40A2G8AG-062EAIT:F | 1 | 1.6 GHz | Volatile | 16Gbit | 19 ns | DRAM | 2G x 8 | Parallel | 15ns | |||||
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Micron Technology Inc. 62F768M64D4EK-023 WT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C | Surface Mount | 441-TFBGA | MT62F768 | SDRAM - Mobile LPDDR5 | - | 441-TFBGA (14x14) | 557-MT62F768M64D4EK-023WT:BTR | 1,500 | 3.2 GHz | Volatile | 48Gbit | DRAM | 768M x 64 | Parallel | - | |||||
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Micron Technology Inc. 29F1T08EELEEJ4-R:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 0°C ~ 70°C | Surface Mount | 132-VBGA | FLASH - NAND (TLC) | 2.6V ~ 3.6V | 132-VBGA (12x18) | 557-MT29F1T08EELEEJ4-R:E | 1 | Non-Volatile | 1Tbit | FLASH | 128G x 8 | Parallel | - | |||||||
Micron Technology Inc. 53E1G32D2FW-046 AUT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 125°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | 557-MT53E1G32D2FW-046AUT:C | 1 | 2.133 GHz | Volatile | 32Gbit | 3.5 ns | DRAM | 1G x 32 | Parallel | 18ns | ||||||
Micron Technology Inc. 53E512M32D1ZW-046BAAT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | 557-MT53E512M32D1ZW-046BAAT:BTR | 1 | 2.133 GHz | Volatile | 16Gbit | 3.5 ns | DRAM | 512M x 32 | Parallel | 18ns | ||||||
Micron Technology Inc. 53E512M32D1ZW-046BAIT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 95°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | 557-MT53E512M32D1ZW-046BAIT:B | 1 | 2.133 GHz | Volatile | 16Gbit | 3.5 ns | DRAM | 512M x 32 | Parallel | 18ns | ||||||
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Micron Technology Inc. 1787 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-1787M | 1 |
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