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| Compare | Image | Name | Manufacturer | Quantity | Weight(Kg) | Size(LxWxH) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Voltage - Supply | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Clock Frequency | Memory Type | Memory Size | Access Time | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Micron Technology Inc. 29F1G08ABAFAWP-AATES:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 105°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | MT29F1G08 | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 48-TSOP I | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 8542.32.0071 | 1 | Non-Volatile | 1Gbit | FLASH | 128M x 8 | Parallel | 20ns | |||||||||
| Micron Technology Inc. 29F1G08ABBFAH4-AATES:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 105°C (TA) | Surface Mount | 63-VFBGA | MT29F1G08 | FLASH - NAND (SLC) | 1.7V ~ 1.95V | 63-VFBGA (9x11) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 8542.32.0071 | 1 | Non-Volatile | 1Gbit | FLASH | 128M x 8 | Parallel | 30ns | |||||||||
| Micron Technology Inc. 29F1T08EEHAFJ4-3ITFES:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Active | -40°C ~ 85°C (TA) | Surface Mount | 132-VBGA | MT29F1T08 | FLASH - NAND | 2.5V ~ 3.6V | 132-VBGA (12x18) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 8542.32.0071 | 1,120 | 333 MHz | Non-Volatile | 1Tbit | FLASH | 128G x 8 | Parallel | - | ||||||||
| Micron Technology Inc. 29F1T08EEHAFJ4-3R:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | 0°C ~ 70°C (TA) | Surface Mount | 132-VBGA | MT29F1T08 | FLASH - NAND | 2.5V ~ 3.6V | 132-VBGA (12x18) | ROHS3 Compliant | 3 (168 Hours) | OBSOLETE | 8542.32.0071 | 1,120 | 333 MHz | Non-Volatile | 1Tbit | FLASH | 128G x 8 | Parallel | - | ||||||||
| Micron Technology Inc. 29F256G08CECEBJ4-37ITR:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Active | -40°C ~ 85°C (TA) | Surface Mount | 132-VBGA | MT29F256G08 | FLASH - NAND (MLC) | 2.7V ~ 3.6V | 132-VBGA (12x18) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 8542.32.0071 | 1,120 | 267 MHz | Non-Volatile | 256Gbit | FLASH | 32G x 8 | Parallel | - | ||||||||
| Micron Technology Inc. 29F2G08ABAGAWP-AITES:G | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | MT29F2G08 | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 48-TSOP I | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 8542.32.0071 | 960 | Non-Volatile | 2Gbit | FLASH | 256M x 8 | Parallel | - | |||||||||
| Micron Technology Inc. 29F512G08CMCEBJ4-37ITR:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Active | -40°C ~ 85°C (TA) | Surface Mount | 132-VBGA | MT29F512G08 | FLASH - NAND (MLC) | 2.7V ~ 3.6V | 132-VBGA (12x18) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 8542.32.0071 | 1,120 | 267 MHz | Non-Volatile | 512Gbit | FLASH | 64G x 8 | Parallel | - | ||||||||
| Micron Technology Inc. 29F512G08EBHAFJ4-3T:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | 0°C ~ 70°C (TA) | Surface Mount | 132-VBGA | MT29F512G08 | FLASH - NAND (TLC) | 2.5V ~ 3.6V | 132-VBGA (12x18) | ROHS3 Compliant | 3 (168 Hours) | OBSOLETE | 8542.32.0071 | 1,120 | 333 MHz | Non-Volatile | 512Gbit | FLASH | 64G x 8 | Parallel | - | ||||||||
 |
Micron Technology Inc. 29GZ5A3BPGGA-53AAT.87K | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | MT29GZ5 | ROHS3 Compliant | 3 (168 Hours) | OBSOLETE | 0000.00.0000 | 1,260 | ||||||||||||||||||||
|
Micron Technology Inc. 29GZ5A5BPGGA-53AIT.87J | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Active | MT29GZ5 | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 0000.00.0000 | 1,260 | ||||||||||||||||||||
| Micron Technology Inc. 35XU02GCBA2G12-0AAT | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Xccela™ - MT35X | Tray | Active | -40°C ~ 105°C | Surface Mount | 24-TBGA | MT35XU02 | FLASH - NOR | 1.7V ~ 2V | 24-T-PBGA (6x8) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 3A991B1A | 8542.32.0071 | 1,122 | 200 MHz | Non-Volatile | 2Gbit | FLASH | 256M x 8 | Xccela Bus | - | |||||||
| Micron Technology Inc. 35XU256ABA2G12-0AUT | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Xccela™ - MT35X | Tray | Active | -40°C ~ 125°C | Surface Mount | 24-TBGA | MT35XU256 | FLASH - NOR | 1.7V ~ 2V | 24-T-PBGA (6x8) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 3A991B1A | 8542.32.0071 | 1,122 | 200 MHz | Non-Volatile | 256Mbit | FLASH | 32M x 8 | Xccela Bus | - | |||||||
|
Micron Technology Inc. 38Q50DEB10DBDXAU.Y74 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Active | MT38Q50 | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 0000.00.0000 | 1,360 | ||||||||||||||||||||
|
Micron Technology Inc. 40A512M16LY-062E AIT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | MT40A512M16 | SDRAM - DDR4 | 1.14V ~ 1.26V | 96-FBGA (7.5x13.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT40A512M16LY-062EAIT:E | EAR99 | 8542.32.0036 | 1,080 | 1.6 GHz | Volatile | 8Gbit | 19 ns | DRAM | 512M x 16 | Parallel | 15ns | ||||
|
Micron Technology Inc. 40A512M16TB-062E:J | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | MT40A512M16 | SDRAM - DDR4 | 1.14V ~ 1.26V | 96-FBGA (7.5x13.5) | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | 1,020 | 1.6 GHz | Volatile | 8Gbit | 19 ns | DRAM | 512M x 16 | Parallel | 15ns | ||||||
| Micron Technology Inc. 41K128M16JT-107 AAT:K | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | MT41K128M16 | SDRAM - DDR3L | 1.283V ~ 1.45V | 96-FBGA (8x14) | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT41K128M16JT-107AAT:K | EAR99 | 8542.32.0036 | 1,224 | 933 MHz | Volatile | 2Gbit | 20 ns | DRAM | 128M x 16 | Parallel | 15ns | ||||
|
Micron Technology Inc. 53D4G16D8AL-062 WT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -30°C ~ 85°C (TC) | MT53D4G16 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | MT53D4G16D8AL-062WT:E | OBSOLETE | 1,190 | 1.6 GHz | Volatile | 64Gbit | DRAM | 4G x 16 | - | - | ||||||||||
| Micron Technology Inc. 53D512M16D1DS-046 AIT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | MT53D512 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53D512M16D1DS-046AIT:D | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 8Gbit | DRAM | 512M x 16 | - | - | ||||||
| Micron Technology Inc. 53D512M16D1DS-046 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -30°C ~ 85°C (TC) | Surface Mount | 200-WFBGA | MT53D512 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53D512M16D1DS-046WT:D | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 8Gbit | DRAM | 512M x 16 | - | - | ||||||
| Micron Technology Inc. 53D512M32D2DS-046 IT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | MT53D512 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53D512M32D2DS-046IT:D | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 16Gbit | DRAM | 512M x 32 | - | - | ||||||
| Micron Technology Inc. 53E128M16D1DS-046 AIT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Obsolete | -40°C ~ 95°C (TC) | MT53E128 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | MT53E128M16D1DS-046AIT:A | OBSOLETE | 1,360 | 2.133 GHz | Volatile | 2Gbit | DRAM | 128M x 16 | - | - | |||||||||||
| Micron Technology Inc. 53E128M16D1DS-046 WT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -30°C ~ 85°C (TC) | MT53E128 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | MT53E128M16D1DS-046WT:A | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 2Gbit | DRAM | 128M x 16 | - | - | ||||||||||
| Micron Technology Inc. 53E128M16D1DS-053 WT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -30°C ~ 85°C (TC) | MT53E128 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | MT53E128M16D1DS-053WT:A | OBSOLETE | 1,360 | 1.866 GHz | Volatile | 2Gbit | DRAM | 128M x 16 | - | - | |||||||||||
| Micron Technology Inc. 53E128M32D2DS-053 AUT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 125°C (TC) | Surface Mount | 200-WFBGA | MT53E128 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E128M32D2DS-053AUT:A | EAR99 | 8542.32.0036 | 1,360 | 1.866 GHz | Volatile | 4Gbit | DRAM | 128M x 32 | - | - | ||||||
| Micron Technology Inc. 53E1536M32D4DT-046 AIT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Obsolete | -40°C ~ 95°C (TC) | MT53E1536 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E1536M32D4DT-046AIT:A | OBSOLETE | 0000.00.0000 | 1,360 | 2.133 GHz | Volatile | 48Gbit | DRAM | 1.5G x 32 | - | - | |||||||||
|
Micron Technology Inc. 53E1G64D4SQ-046 AAT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Obsolete | -40°C ~ 105°C (TC) | MT53E1G64 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | MT53E1G64D4SQ-046AAT:A | OBSOLETE | 0000.00.0000 | 1,360 | 2.133 GHz | Volatile | 64Gbit | DRAM | 1G x 64 | - | - | |||||||||
|
Micron Technology Inc. 53E1G64D4SQ-046 WT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -30°C ~ 85°C (TC) | MT53E1G64 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | MT53E1G64D4SQ-046WT:A | OBSOLETE | 0000.00.0000 | 1,360 | 2.133 GHz | Volatile | 64Gbit | DRAM | 1G x 64 | - | - | |||||||||
| Micron Technology Inc. 53E256M16D1DS-046 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Active | -30°C ~ 85°C (TC) | MT53E256 | SDRAM - Mobile LPDDR4 | 1.1V | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E256M16D1DS-046WT:B | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 4Gbit | DRAM | 256M x 16 | - | - | ||||||||
| Micron Technology Inc. 53E256M32D2DS-046 AIT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | MT53E256 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E256M32D2DS-046AIT:B | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 8Gbit | DRAM | 256M x 32 | - | - | ||||||
| Micron Technology Inc. 53E256M32D2DS-046 AUT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Last Time Buy | -40°C ~ 125°C (TC) | Surface Mount | 200-WFBGA | MT53E256 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E256M32D2DS-046AUT:B | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 8Gbit | DRAM | 256M x 32 | - | - |
