Compare | Image | Name | Manufacturer | Quantity | Weight(Kg) | Size(LxWxH) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F |
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Wolfspeed, Inc. E4D10120A | Wolfspeed, Inc. |
Min: 1 Mult: 1 |
/image/Wolfspeed, Inc. | E-Series, Automotive | Tube | Active | Through Hole | TO-220-2 | E4D10120 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | 1 (Unlimited) | 1697-E4D10120A | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 1200 V | 1.8 V @ 10 A | 200 µA @ 1200 V | -55°C ~ 175°C | 33A | 777pF @ 0V, 1MHz | |||||||||||||||||
Wolfspeed, Inc. C3M0021120K | Wolfspeed, Inc. |
Min: 1 Mult: 1 |
/image/Wolfspeed, Inc. | C3M™ | Tube | Active | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4 | C3M0021120 | SiCFET (Silicon Carbide) | TO-247-4L | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 100A (Tc) | 15V | 28.8mOhm @ 50A, 15V | 3.6V @ 17.7mA | 162 nC @ 15 V | +15V, -4V | 4818 pF @ 1000 V | - | 469W (Tc) |
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