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ALLCHIPS ELECTRONICS LIMITED

Compare Image Name Manufacturer Quantity Weight(Kg) Size(LxWxH) Mfr Series Package Product Status Operating Temperature Mounting Type Package / Case Base Product Number Technology Supplier Device Package DataSheet RoHS Status Moisture Sensitivity Level (MSL) Other Names ECCN HTSUS Standard Package Speed FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Voltage - DC Reverse (Vr) (Max) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Operating Temperature - Junction Current - Average Rectified (Io) Capacitance @ Vr, F
Wolfspeed, Inc. E4D10120A Wolfspeed, Inc. E4D10120A Wolfspeed, Inc.
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/image/Wolfspeed, Inc. E-Series, Automotive Tube Active Through Hole TO-220-2 E4D10120 SiC (Silicon Carbide) Schottky TO-220-2 download 1 (Unlimited) 1697-E4D10120A EAR99 8541.10.0080 50 No Recovery Time > 500mA (Io) 1200 V 1.8 V @ 10 A 200 µA @ 1200 V -55°C ~ 175°C 33A 777pF @ 0V, 1MHz
Wolfspeed, Inc. C3M0021120K Wolfspeed, Inc. C3M0021120K Wolfspeed, Inc.
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/image/Wolfspeed, Inc. C3M™ Tube Active -40°C ~ 175°C (TJ) Through Hole TO-247-4 C3M0021120 SiCFET (Silicon Carbide) TO-247-4L download ROHS3 Compliant 1 (Unlimited) EAR99 8541.29.0095 30 N-Channel 1200 V 100A (Tc) 15V 28.8mOhm @ 50A, 15V 3.6V @ 17.7mA 162 nC @ 15 V +15V, -4V 4818 pF @ 1000 V - 469W (Tc)

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